Vertical Al2Se3/MoSe2 heterojunction on sapphire synthesized using ion beam

Tsai, Hsu‐Sheng; Liou, Jhe Wei; Wang, Yi Chung; Chen, Chia Wei; Chueh, Yu‐Lun; Hsiao, Ching Hung; Ouyang, Hao; Woon, Wei Yen; Liang, J.H.

doi:10.1039/c6ra28273c

Cited by 9 publications

(10 citation statements)

References 25 publications

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“…The other (≈199 cm −1 ) is the A 1g mode of HfSe 2 caused by out‐of‐plane vibration, implying that the HfSe 2 might be synthesized initially . The ion implantation technique can achieve high uniformity and continuity of wafer scale by precisely controlling the dose and accelerated energy, which was demonstrated in previous report . Up to now, we can roughly make sure that the ion beam‐assisted process has successfully synthesized HfSe 2 on sapphire, following the synthesis of MoSe 2 .…”

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confidence: 62%

“…Actually, the mechanical exfoliation is an obtainment method rather than growth or synthesis. In addition to the MBE with some issues for TMDs growth, we have developed the ion beam‐assisted process to synthesize multilayer MoSe 2 on sapphire . In this work, we successfully expand this technique for synthesis of multilayer HfSe 2 on sapphire and investigate its band structure by using photoluminescence (PL) spectroscopy compared with the results of the DFT calculation.…”

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confidence: 99%

“…In conclusion, the results of material analysis certify that the sputtered Hf film could be selenized by annealing after the Se ion implantation. The 6L 1T‐HfSe 2 was first synthesized on sapphire by the assistance of ion beam technique, following the successful synthesis of multilayer MoSe 2 . It is worth noting that the PL characteristics of the 6L 1T‐HfSe 2 is clearly elucidated by the DFT calculation and its band structure is also well realized.…”

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confidence: 99%

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Photoluminescence Characteristics of Multilayer HfSe₂ Synthesized on Sapphire Using Ion Implantation

Tsai

Liou

Setiyawati

et al. 2018

Adv Materials Inter

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to be as the channel materials of FETs. [9] Recently, the HfSe 2 has been predicted to possess much higher carrier mobility above 3000 cm 2 (V s) −1 surpassing that of Si more than double so that scientists are attracted to fall in this field. [9] The backgated FETs of exfoliated multilayer HfSe 2 with a high on/off current ratio of >7.5 × 10 6 on SiO 2 /Si substrate were initially fabricated; nevertheless, the extraced carrier mobilities are lower than 1 cm 2 (V s) −1 . [10] Then the top-gated multilayer HfSe 2 FETs with high κ dielectrics grown by atomic layer deposition were demonstrated this year, but the multilayer HfSe 2 was still obtained by mechanical exfoliation and the carrier mobilities of devices were only enhanced to ≈4 cm 2 (V s) −1 . [11] Moreover, the phototransistors

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confidence: 99%

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confidence: 99%

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Photoluminescence Characteristics of Multilayer HfSe₂ Synthesized on Sapphire Using Ion Implantation

Tsai

Liou

Setiyawati

et al. 2018

Adv Materials Inter

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“…31 All of the analytical results confirm that the Mo film is selenized by the implanted Se ions during the thermal treatment to form MoSe 2 layers on a sapphire substrate. 31 Furthermore, we have successfully expanded this technique for the synthesis of multilayer HfSe 2 to investigate its band structure by using photoluminescence (PL) spectroscopy and comparing with the calculation results. 32 However, the excess metal at the surface after the process cannot be accurately removed without etching of TMDs because the etching agent with high selectivity cannot be found.…”

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confidence: 67%

Direct Synthesis of Large-Scale Multilayer TaSe₂ on SiO₂/Si Using Ion Beam Technology

et al. 2019

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The multilayer 1T-TaSe2 is successfully synthesized by annealing a Se-implanted Ta thin film on the SiO2/Si substrate. Material analyses confirm the 1T (octahedral) structure and the quasi-2D nature of the prepared TaSe2. Temperature-dependent resistivity reveals that the multilayer 1T-TaSe2 obtained by our method undergoes a commensurate charge-density wave (CCDW) transition at around 500 K. This synthesis process has been applied to synthesize MoSe2 and HfSe2 and expanded for synthesis of one more transition-metal dichalcogenide (TMD) material. In addition, the main issue of the process, that is, the excess metal capping on the TMD layers, is solved by the reduction of thickness of the as-deposited metal thin film in this work.

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“…A high on/off current ratio of ≈10 7 can be achieved at room temperature. Other FETs based on MX 2 vdWHs have also been studied, and the carrier mobility, on/off ratio, and conductivity of the FETs have been greatly improved compared with isolated TMDs …”

Section: Application Of 2d Vdwhmentioning

confidence: 99%

Recent Advances in van der Waals Heterojunctions Based on Semiconducting Transition Metal Dichalcogenides

Cheng

et al. 2018

Adv Elect Materials

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Due to the direct bandgap with coupled spin–valley physics, semiconducting MX2 (M = Mo, W; X = S, Se) materials have attracted considerable attention and have numerous proposed applications. With the development of 2D materials research, many 2D materials have been discovered, such as insulators, semiconductors, ferromagnetic semiconductors, topological insulators, metals, and ferromagnetic metals. van der Waals heterojunctions (vdWHs), based on MX2 and other 2D materials, have attracted increasing attention because of their various potential applications, such as field effect transistors, solar cells, photodetectors, light emitting diodes, and lasers. Based on the functionality of 2D materials, vdWHs are classified into six classes: MX2/semiconductors, MX2/insulators, MX2/topological insulators, MX2/ferromagnetic semiconductors, MX2/metals, and MX2/ferromagnetic metals. For each class of vdWHs, the structural, electronic, and optical properties, as well as potential applications in electronics and optoelectronics, are reviewed. Finally, an overview of perspectives and challenges regarding vdWHs based on MX2 materials is presented.

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Vertical Al₂Se₃/MoSe₂ heterojunction on sapphire synthesized using ion beam

Cited by 9 publications

References 25 publications

Photoluminescence Characteristics of Multilayer HfSe₂ Synthesized on Sapphire Using Ion Implantation

Photoluminescence Characteristics of Multilayer HfSe₂ Synthesized on Sapphire Using Ion Implantation

Direct Synthesis of Large-Scale Multilayer TaSe₂ on SiO₂/Si Using Ion Beam Technology

Recent Advances in van der Waals Heterojunctions Based on Semiconducting Transition Metal Dichalcogenides

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Vertical Al2Se3/MoSe2 heterojunction on sapphire synthesized using ion beam

Cited by 9 publications

References 25 publications

Photoluminescence Characteristics of Multilayer HfSe2 Synthesized on Sapphire Using Ion Implantation

Photoluminescence Characteristics of Multilayer HfSe2 Synthesized on Sapphire Using Ion Implantation

Direct Synthesis of Large-Scale Multilayer TaSe2 on SiO2/Si Using Ion Beam Technology

Recent Advances in van der Waals Heterojunctions Based on Semiconducting Transition Metal Dichalcogenides

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Vertical Al₂Se₃/MoSe₂ heterojunction on sapphire synthesized using ion beam

Photoluminescence Characteristics of Multilayer HfSe₂ Synthesized on Sapphire Using Ion Implantation

Photoluminescence Characteristics of Multilayer HfSe₂ Synthesized on Sapphire Using Ion Implantation

Direct Synthesis of Large-Scale Multilayer TaSe₂ on SiO₂/Si Using Ion Beam Technology