Direct Synthesis of Large-Scale Multilayer TaSe<sub>2</sub> on SiO<sub>2</sub>/Si Using Ion Beam Technology

Tsai, Hsu‐Sheng; Liu, Fan Wei; Liou, Jhe Wei; Chen, Chong; Tang, Shin Yi; Wang, Changan; Ouyang, Hao; Chueh, Yu‐Lun; Liu, Chaoming; Zhou, Shengqiang; Woon, Wei Yen

doi:10.1021/acsomega.9b02441

Cited by 8 publications

(4 citation statements)

References 38 publications

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“…For SnSe 2 and Au we extracted the work function values from Kelvin probe force microscopy (KPFM) measurements, [21] whereas for TaSe 2 , we use values from literature. [40][41][42] The notation S in this figure which indicates the degree of the FLP, is expressed as:…”

Section: Proposed Methodsmentioning

confidence: 99%

Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De‐Pinning of van der Waals Contacts

Krishna

Dandu

Watanabe

et al. 2021

Adv Funct Materials

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Due to Fermi level pinning (FLP), metal‐semiconductor contact interfaces result in a Schottky barrier height (SBH), which is usually difficult to tune. This makes it challenging to efficiently inject both electrons and holes using the same metal—an essential requirement for several applications, including light‐emitting devices and complementary logic. Interestingly, modulating the SBH in the Schottky–Mott limit of de‐pinned van der Waals (vdW) contacts becomes possible. However, accurate extraction of the SBH is essential to exploit such contacts to their full potential. In this study a simple technique is proposed to accurately estimate the SBH at the vdW contact interfaces by circumventing several ambiguities associated with SBH extraction. Using this technique on several vdW contacts, including metallic 2H‐TaSe2, semi‐metallic graphene, and degenerately doped semiconducting SnSe2, it is demonstrated that vdW contacts exhibit a universal de‐pinned nature. Superior ambipolar carrier injection properties of vdW contacts are demonstrated (with Au contact as a reference) in two applications, namely, a) pulsed electroluminescence from monolayer WS2 using few‐layer graphene (FLG) contact, and b) efficient carrier injection to WS2 and WSe2 channels in both n‐type and p‐type field effect transistor modes using 2H‐TaSe2 contact.

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Section: Proposed Methodsmentioning

confidence: 99%

Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De‐Pinning of van der Waals Contacts

Krishna

Dandu

Watanabe

et al. 2021

Adv Funct Materials

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“…The selective interactions in ML TaSe 2 films on BLG are non-trivial, because it is reasonable to expect similar amount of charge transfer in both structural phases of TaSe 2 , considering the work function difference between BLG (4.3 eV) and bulk TaSe 2 (5.1 eV for 1 T and 5.5 eV for 2 H ) [ 45 – 47 ]. However, the work function can be modified when TaSe 2 is thinned down to ML [ 46 – 50 ]. The calculated work functions for 1 H -TaSe 2 are hardly changed from bulk (5.5 eV) to ML (5.45 eV), whereas the work function of 1 T -TaSe 2 are significantly reduced from bulk (5.10 eV) to ML (4.66 eV) (Fig.…”

Section: Discussionmentioning

confidence: 99%

Controlling structure and interfacial interaction of monolayer TaSe2 on bilayer graphene

Lee,

Im,

Choi

et al. 2024

Nano Convergence

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Tunability of interfacial effects between two-dimensional (2D) crystals is crucial not only for understanding the intrinsic properties of each system, but also for designing electronic devices based on ultra-thin heterostructures. A prerequisite of such heterostructure engineering is the availability of 2D crystals with different degrees of interfacial interactions. In this work, we report a controlled epitaxial growth of monolayer TaSe2 with different structural phases, 1H and 1 T, on a bilayer graphene (BLG) substrate using molecular beam epitaxy, and its impact on the electronic properties of the heterostructures using angle-resolved photoemission spectroscopy. 1H-TaSe2 exhibits significant charge transfer and band hybridization at the interface, whereas 1 T-TaSe2 shows weak interactions with the substrate. The distinct interfacial interactions are attributed to the dual effects from the differences of the work functions as well as the relative interlayer distance between TaSe2 films and BLG substrate. The method demonstrated here provides a viable route towards interface engineering in a variety of transition-metal dichalcogenides that can be applied to future nano-devices with designed electronic properties.

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“…First, large TaSe 2 films are required, and their on-wafer process must be compatible with the microelectronics industry. Second, dichalcogenide materials, in particular 1T-TaSe 2 , are known to be easily oxidized. , An effective in situ encapsulation method at the end of the growth is thus mandatory.…”

mentioning

confidence: 99%

“…Second, dichalcogenide materials, in particular 1T-TaSe 2 , are known to be easily oxidized. 24,25 An effective in situ encapsulation method at the end of the growth is thus mandatory. In principle, the two-dimensional structure of 1T-TaSe 2 allows for van der Waals epitaxy on passivated conventional semiconductor substrates.…”

mentioning

confidence: 99%

Large-Area Epitaxial Mott Insulating 1T-TaSe₂ Monolayer on GaP(111)B

Koussir,

Chernukha,

Sthioul

et al. 2023

Nano Lett.

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Two-dimensional Mott materials have recently been reported in the dichalcogenide family with high potential for Mottronic applications. Nevertheless, their widespread use as a single or few layers is hampered by their limited device integration resulting from their growth on graphene, a metallic substrate. Here, we report on the fabrication of 1T-TaSe 2 monolayers grown by molecular beam epitaxy on semiconducting gallium phosphide substrates. At the nanoscale, the charge density wave reconstruction and a moirépattern resulting from the monolayer interaction with the substrate are observed by scanning tunneling microscopy. The fully open gap unveiled by tunneling spectroscopy, which can be further manipulated by the proximity of a metal tip, is confirmed by transport measurements from micrometric to millimetric scales, demonstrating a robust Mott insulating phase at up to 400 K.

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Direct Synthesis of Large-Scale Multilayer TaSe₂ on SiO₂/Si Using Ion Beam Technology

Cited by 8 publications

References 38 publications

Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De‐Pinning of van der Waals Contacts

Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De‐Pinning of van der Waals Contacts

Controlling structure and interfacial interaction of monolayer TaSe2 on bilayer graphene

Large-Area Epitaxial Mott Insulating 1T-TaSe₂ Monolayer on GaP(111)B

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Direct Synthesis of Large-Scale Multilayer TaSe2 on SiO2/Si Using Ion Beam Technology

Cited by 8 publications

References 38 publications

Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De‐Pinning of van der Waals Contacts

Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De‐Pinning of van der Waals Contacts

Controlling structure and interfacial interaction of monolayer TaSe2 on bilayer graphene

Large-Area Epitaxial Mott Insulating 1T-TaSe2 Monolayer on GaP(111)B

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Product

Resources

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Direct Synthesis of Large-Scale Multilayer TaSe₂ on SiO₂/Si Using Ion Beam Technology

Large-Area Epitaxial Mott Insulating 1T-TaSe₂ Monolayer on GaP(111)B