The multilayer 1T-TaSe2 is successfully synthesized by annealing a Se-implanted Ta thin film on the SiO2/Si substrate. Material analyses confirm the 1T (octahedral) structure and the quasi-2D nature of the prepared TaSe2. Temperature-dependent resistivity reveals that the multilayer 1T-TaSe2 obtained by our method undergoes a commensurate charge-density wave (CCDW) transition at around 500 K. This synthesis process has been applied to synthesize MoSe2 and HfSe2 and expanded for synthesis of one more transition-metal dichalcogenide (TMD) material. In addition, the main issue of the process, that is, the excess metal capping on the TMD layers, is solved by the reduction of thickness of the as-deposited metal thin film in this work.

With the dramatic increase of photovoltaic (PV) module installation in solar energy-based industries, the methods for recovering waste solar generators should be emphasized as the backup of the PV market for environmental protection. Crystalline-silicon accounts for most of the worldwide PV market and it contains valuable materials such as high purity of silicon (Si), silver (Ag), copper (Cu), tin (Sn), and lead (Pb). This study can provide an efficient recycling process for valuable materials resourced from waste crystalline-silicon PV module, including Si in the PV cell, and Ag, Cu, Pb, Sn, in PV ribbon. As tempered glass and Ethylene Vinyl Acetate (EVA) resin were removed, the module was separated into two materials, PV ribbon and PV cell. For PV cell purification, Si with purity at 99.84% was recovered by removing impurities such as aluminum (Al) and Ag by two-step leaching and dissolving the impurities. For PV ribbon recovering, purified metal or metal oxide was obtained through the processes of leaching/polishing, extraction, and chemical precipitation. In the polishing process, 99.5% of copper wire was collected. The purities of final products are 99.7% for CuO, 99.47% for PbO, 99.68% for SnO2, and 98.85% for Ag respectively.

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