B ecause of the zero-bandgap of group IV 2D materials such as graphene, silicene, and germanene, 1,2 it totally restricts their applications for channel and emission materials in switching and
Germanene layers with lonsdaleite structure has been synthesized from a SiGe thin film for the first time using a N2 plasma-assisted process in this investigation. Multi-layered germanene can be directly observed, and the derived lattice parameters are nearly consistent with the theoretical results. Furthermore, large-scale multi-layered germanene has also been demonstrated for applications.
Multilayer antimonene nanoribbons with room temperature orange light emission uniformly distributed on InSb were synthesized by the plasma-assisted process. The bandgap opening was caused by the quantum confinement effect of the nanoribbon structure and the turbostratic stacking of antimonene layers. This attractive two-dimensional material, whose band structure is proper for applications of transistors and light-emitting diodes, was first synthesized.
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