Variability analysis of a graded-channel dual-material double-gate strained-silicon MOSFET with fixed charges

Abstract

In this paper, variability analysis of graded channel dual material (GCDM) double gate (DG) strainedsilicon (s-Si) MOSFET with xed charges is analyzed with the help of Sentaurus TCAD. By varying the different device parameters, the variability analysis of the proposed GCDM-DG s-Si MOSFET is performed with respect to variations in threshold voltage and drain current as the line edge roughness and uctuations in random dopant, contact resistance, and oxide thickness are considered. The results con rm that the effect of process variations is severe when the device has xed charges at oxide interface. Moreover, the proposed GCDM-DG s-Si p-MOSFET has less vulnerable to the effects of line edge roughness, uctuations in oxide thickness and random dopants in comparison with the proposed GCDM-DG s-Si n-MOSFET.

Circuit Level Analysis of a Dual Material Graded Channel (DMGC) Cylindrical Gate All Around (CGAA) FET at Nanoscale Regime

“…This structure is called a Dual material gate (DMG) structure. [9][10][11] In a Dual Material cylindrical GAA (DM CGAA) FET the source side work function (∅ m1 ) known as control gate is maintained higher than the drain side work function (∅ m2 ) known as screen gate. The difference in work function provides the step like potential in the channel by which the drain side fluctuations on the channel gets minimized, improves the transconductance and SCEs immunity.…”