Vapor phase epitaxial growth of InP-based compound semiconductor materials

Hyder, S. B.

doi:10.1016/0022-0248(81)90256-6

Cited by 22 publications

(3 citation statements)

References 15 publications

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“…So it is well known that t h e efficiency of GaAsl-,J',-LED's depends on it 111. A t certain A3/B5 ratios maxima of electron mobility were found [2]. Such a behaviour has been observed for LPE experiments ririder controlled vapour pressure [3] and MOCVD [4], too. It is also known t h a t there is a certain influence of the A3/B5 ratio on the ineorporation of deep levels into the grown layer.…”

Section: Introductionsupporting

confidence: 56%

On the Correlations between Electrical Properties and Growth Conditions for VPE GaAs Grown in the Hydride System

Diegner

Kugler

Weinert

1986

phys. stat. sol. (a)

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Section: Introductionsupporting

confidence: 56%

On the Correlations between Electrical Properties and Growth Conditions for VPE GaAs Grown in the Hydride System

Diegner

Kugler

Weinert

1986

phys. stat. sol. (a)

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“…Here, because of the limited scope of this review, we only discuss HVPE for solar cell application. Some of the excellent old reviews on the subject can be found in [16,[24][25][26][27].…”

Section: Hydride Vapour Phase Epitaxy (Hvpe)mentioning

confidence: 99%

Topical review: pathways toward cost-effective single-junction III–V solar cells

Raj¹,

Haggrén²,

Wong³

et al. 2021

J. Phys. D: Appl. Phys.

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III–V semiconductors such as InP and GaAs are direct bandgap semiconductors with significantly higher absorption compared to silicon. The high absorption allows for the fabrication of thin/ultra-thin solar cells, which in turn permits for the realization of lightweight, flexible, and highly efficient solar cells that can be used in many applications where rigidity and weight are an issue, such as electric vehicles, the internet of things, space technologies, remote lighting, portable electronics, etc. However, their cost is significantly higher than silicon solar cells, making them restrictive for widespread applications. Nonetheless, they remain pivotal for the continuous development of photovoltaics. Therefore, there has been a continuous worldwide effort to reduce the cost of III–V solar cells substantially. This topical review summarises current research efforts in III–V growth and device fabrication to overcome the cost barriers of III–V solar cells. We start the review with a cost analysis of the current state-of-art III–V solar cells followed by a subsequent discussion on low-cost growth techniques, substrate reuse, and emerging device technologies. We conclude the review emphasizing that to substantially reduce the cost-related challenges of III–V photovoltaics, low-cost growth technologies need to be combined synergistically with new substrate reuse techniques and innovative device designs.

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“…The growth of indium phosphide, indium gallium arsenide, and indium gallium arsenide phosphide is feasible in this technology (6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16) and multilayer device structures, lattice matched to indium phosphide substrates, can be routinely grown (17)(18)(19)(20)(21)(22)(23). The processes involved in the growth of III-V alloys by VPE have been rather extensively studied, both experimentally and theoretically (2,7,(24)(25)(26)(27)(28)(29)(30)(31)(32)(33)(34)(35)(36)(37)(38)(39)(40)(41). However, the more detailed studies have generally involved gallium arsenide growth (24)(25)(26)(27)(28)(29).…”

mentioning

confidence: 99%

Spatial Variations in the Epitaxial Growth of InP and InGaAs by Trichloride VPE and Their Physical and Chemical Origins

Buckley

Filipe

Lineman

et al. 1992

J. Electrochem. Soc.

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The availability of automated techniques makes possible very detailed characterization of III-V epitaxial layers. We report results of a study of the growth of indium phosphide and indium gallium arsenide layers on 50 mm diam indium phosphide substrates by trichloride vapor phase epitaxy under a variety of conditions and some effects of reactor parameters on the growth process from a wafer-scale point of view. It is shown that the patterns of variation observed in twodimensional wafer-scale growth rate maps can be correlated with data obtained from series of runs in which conditions were systematically varied. The results are interpreted in terms of the underlying physics and chemistry of the growth process.

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Vapor phase epitaxial growth of InP-based compound semiconductor materials

Cited by 22 publications

References 15 publications

On the Correlations between Electrical Properties and Growth Conditions for VPE GaAs Grown in the Hydride System

On the Correlations between Electrical Properties and Growth Conditions for VPE GaAs Grown in the Hydride System

Topical review: pathways toward cost-effective single-junction III–V solar cells

Spatial Variations in the Epitaxial Growth of InP and InGaAs by Trichloride VPE and Their Physical and Chemical Origins

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