Van der Waals epitaxy of GaN-based light-emitting diodes on wet-transferred multilayer graphene film

Yang, Li; Zhao, Yun; Wei, Tongbo; Liu, Zhiqiang; Duan, Ruihong; Wang, Yunyu; Zhang, Xiang; Wu, Qingwen; Yan, Jianchang; Yi, Xiaoyao; Yuan, Guodong; Wang, Junxi; Li, Jimin

doi:10.7567/jjap.56.085506

Cited by 24 publications

(25 citation statements)

References 30 publications

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“…22 Based on these measurements, we estimate that the residual stress of AlN is significantly reduced from 0.87 GPa to 0.25 GPa with the assistance of Gr. 23 The high-resolution transmission electron microscopy (HRTEM) image of the AlN/Gr/NPSS interface shows the presence of an approximately 0.7-nm-thick Gr layer [dark area in Fig. 2(d)] that keeps its original layered structure after 1200 C AlN growth owing to the excellent stability.…”

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confidence: 99%

Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

Chang

Chen

et al. 2019

Applied Physics Letters

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We report the growth of high-quality AlN films on nano-patterned sapphire substrates (NPSSs) by graphene-assisted quasi-van der Waals epitaxy, which enables rapid coalescence to shorten the growth time. Due to the presence of graphene (Gr), AlN tends to be two-dimensional laterally expanded on the NPSS, leading to the reduction of dislocation density and strain release in the AlN epitaxial layer. Using first-principles calculations, we confirm that Gr can reduce the surface migration barrier and promote the lateral migration of metal Al atoms. Furthermore, the electroluminescence results of deep ultraviolet light emitting diodes (DUV-LEDs) have exhibited greatly enhanced emission located at 280 nm by inserting the Gr interlayer. The present work may provide the potential to solve the bottleneck of high efficiency DUV-LED.

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confidence: 99%

Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

Chang

Chen

et al. 2019

Applied Physics Letters

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“…[ 19–22 ] In addition, GaN grown by MOVPE with oxygen‐plasma pretreatment are all Ga‐lattice‐polarity while N‐lattice‐polarity has never been reported until now to the best of our knowledge. [ 23–29 ] In contrast to Ga‐polarity GaN, N‐polarity one offers a different atomic configuration in chemical activity, which not only allows the access to kinetic space in epitaxy that is not normally attainable on Ga‐polarity surface, but also enables the fabrication of a variety of novel device structures. [ 30,31 ] Furthermore, since N‐polarity InGaN, which acts as quantum well in the case of visible light emitting devices, stands higher growth temperature than Ga‐polarity one and thus the In composition can be higher at the same growth temperature.…”

Section: Introductionmentioning

confidence: 99%

Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes

Liu

Zhang

Rong

et al. 2020

Adv Funct Materials

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Lattice polarity is a key point for hexagonal semiconductors such as GaN. Unfortunately, only Ga-polarity GaN have been achieved on graphene till now. Here, the epitaxy of high quality nitrogen-polarity GaN films on transferred graphene on non-polar sapphire substrates by molecular beam epitaxy is reported. This success is achieved through atomic nitrogen irradiation, where CN bonds are formed in graphene and provide nucleation sites for GaN and leading to N-polarity GaN epitaxy. The N-polarity characteristics are confirmed by chemical etching and transmission electron microscopy measurement. Due to the higher growth temperature of InGaN at N-polarity than that at Ga-polarity, green light emitting diodes are fabricated on the graphene-assisted substrate, where a large redshift of emission wavelength is observed. These results open a new avenue for the polarity modulation of III-nitride films based on 2D materials, and also pave the way for potential application in longer wavelength light emitting devices. nucleation but also lead to the N-lattice-polarity of the following grown GaN, as further confirmed by chemical etching and transmission electron microscopy measurement. The subsequent growth by MOVPE follows the N-lattice-polarity, which makes it easy to obtain the high In-composition InGaN and thus to fabricate the N-polarity nitrides-based green LEDs on graphene/sapphire for the first time.

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“…Because the weak van der Waals binding between graphite and GaN films can relax the requirements for lattice matching between two material systems, mechanically exfoliated graphite can be used as an ideal substrate for GaN growth. To date, many studies have reported the successful growth of GaN films on graphene, but the graphene they used is almost always prepared by chemical vapor deposition (CVD) or graphitization of SiC substrates [ 12 – 15 ]. Such graphene layers have abundant step edges and defects that act as nucleation sites to induce film growth.…”

Section: Introductionmentioning

confidence: 99%

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite

Liu

Zhang

et al. 2018

Nanoscale Res Lett

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The growth mechanism of GaN epitaxial layers on mechanically exfoliated graphite is explained in detail based on classic nucleation theory. The number of defects on the graphite surface can be increased via O-plasma treatment, leading to increased nucleation density on the graphite surface. The addition of elemental Al can effectively improve the nucleation rate, which can promote the formation of dense nucleation layers and the lateral growth of GaN epitaxial layers. The surface morphologies of the nucleation layers, annealed layers and epitaxial layers were characterized by field-emission scanning electron microscopy, where the evolution of the surface morphology coincided with a 3D-to-2D growth mechanism. High-resolution transmission electron microscopy was used to characterize the microstructure of GaN. Fast Fourier transform diffraction patterns showed that cubic phase (zinc-blend structure) GaN grains were obtained using conventional GaN nucleation layers, while the hexagonal phase (wurtzite structure) GaN films were formed using AlGaN nucleation layers. Our work opens new avenues for using highly oriented pyrolytic graphite as a substrate to fabricate transferable optoelectronic devices.

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Van der Waals epitaxy of GaN-based light-emitting diodes on wet-transferred multilayer graphene film

Cited by 24 publications

References 30 publications

Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite

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