Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

Chang, Hung‐Chih; Chen, Zhaolong; Li, Weijiang; Yan, Jianchang; Hou, Rui; Yang, Shenyuan; Liu, Zhiqiang; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Gao, Peng; Wei, Tongbo

doi:10.1063/1.5081112

Cited by 80 publications

(60 citation statements)

References 36 publications

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“…The most frequently used transfer printing method includes CVD synthesis and mechanical exfoliation. The former can be implemented by first synthesizing graphene sheets on Cu or nickel foil (even directly on sapphire substrate), and then transferring them via dry or wet transfer techniques onto the target substrate for vdWE of III‐nitrides. In addition, graphene sheets can also be exfoliated mechanically from graphite .…”

Section: Vdwe Based On Graphenementioning

confidence: 99%

Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

Wang

Hao

et al. 2019

Advanced Materials

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to 6.2 eV for AlN, [3] which spans the entire ultraviolet and visible band [4][5][6][7] as well as the near-infrared region. [8,9] Accordingly, III-nitrides have been widely adopted for the fabrication of light-emitting diodes (LEDs), [10][11][12] laser diodes (LDs), [13][14][15] photodetectors (PDs), [16][17][18] and solar cells. [19][20][21] Furthermore, the spontaneous and piezoelectric polarization in wurtzite semiconductors [22][23][24][25] and the high electron drift velocities [26][27][28] can be used to fabricate high electron mobility transistors based on two-dimensional (2D) electron gas (2DEG) in AlGaN/GaN heterostructures. [29][30][31][32] At present, by employing metal organic chemical vapor deposition (MOCVD), [3,[33][34][35] molecular beam epitaxy (MBE), [36][37][38][39] or hydride vapor phase epitaxy (HVPE), [40][41][42] III-nitride films with high crystalline quality can be obtained on c-plane sapphire, [43][44][45] Si (111), [38,[46][47][48] or 6H-SiC [49][50][51] substrates at a high growth temperature, usually above 1000 °C. [52][53][54] However, exfoliating III-nitride films from such single-crystalline substrates proves difficult because of the strong sp 3 -type covalent bonds between the substrates and epilayers. [55] To overcome this problem, thermal release through laser radiation, [56,57] stamp-based printing, [58,59] chemical etching, [60][61][62][63][64][65][66][67] and mechanical exfoliation [54,55,68,69] from singlecrystalline substrates have been investigated. However, there still remain some bottlenecks for future applications, such as damage, limited size, and tedious steps of the flexible production process. [55] Furthermore, flexible amorphous substrates generally cannot tolerate such high growth temperature, [54] and cannot be used for epitaxial growth of single-crystalline films because of the unordered surface atomic arrangement. [70,71] Hence, it is extremely difficult to make allowance for wearable and foldable applications of next-generation (opto)electronic devices based on III-nitrides. [72] On the other hand, sp 2 -bonded 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) exhibit hexagonal in-plane lattice arrangements and weakly bonded layers. [54,73,74] If sp 3 -bonded III-nitride films can somehow be grown on sp 2 -bonded 2D materials, it is theoretically possible to transfer these functional films onto foreign flexible substrates because of the weak van der Waals interactions on both sides of the 2D materials. [68,75,76] In this case, the 2D materials not only act as a buffer layer but also provide a release layer for the mechanical exfoliation of solid-state lighting, flat-panel displays, and solar energy and power electronics. Generally, GaN-based devices are heteroepitaxially grown on c-plane sapphire, Si (111), or 6H-SiC substrates. However, it is very difficult to release the GaN-based films from such single-crystalline substrates and transfer them onto other foreign substrates. Consequently, it is difficult to meet t...

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Section: Vdwe Based On Graphenementioning

confidence: 99%

Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

Wang

Hao

et al. 2019

Advanced Materials

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“…[ 15–18 ] Oxygen‐plasma pretreatment on the graphene is often used as a way to generate more nucleation sites for AlN. [ 19–22 ] In addition, GaN grown by MOVPE with oxygen‐plasma pretreatment are all Ga‐lattice‐polarity while N‐lattice‐polarity has never been reported until now to the best of our knowledge. [ 23–29 ] In contrast to Ga‐polarity GaN, N‐polarity one offers a different atomic configuration in chemical activity, which not only allows the access to kinetic space in epitaxy that is not normally attainable on Ga‐polarity surface, but also enables the fabrication of a variety of novel device structures.…”

Section: Introductionmentioning

confidence: 99%

Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes

Liu

Zhang

Rong

et al. 2020

Adv Funct Materials

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Lattice polarity is a key point for hexagonal semiconductors such as GaN. Unfortunately, only Ga-polarity GaN have been achieved on graphene till now. Here, the epitaxy of high quality nitrogen-polarity GaN films on transferred graphene on non-polar sapphire substrates by molecular beam epitaxy is reported. This success is achieved through atomic nitrogen irradiation, where CN bonds are formed in graphene and provide nucleation sites for GaN and leading to N-polarity GaN epitaxy. The N-polarity characteristics are confirmed by chemical etching and transmission electron microscopy measurement. Due to the higher growth temperature of InGaN at N-polarity than that at Ga-polarity, green light emitting diodes are fabricated on the graphene-assisted substrate, where a large redshift of emission wavelength is observed. These results open a new avenue for the polarity modulation of III-nitride films based on 2D materials, and also pave the way for potential application in longer wavelength light emitting devices. nucleation but also lead to the N-lattice-polarity of the following grown GaN, as further confirmed by chemical etching and transmission electron microscopy measurement. The subsequent growth by MOVPE follows the N-lattice-polarity, which makes it easy to obtain the high In-composition InGaN and thus to fabricate the N-polarity nitrides-based green LEDs on graphene/sapphire for the first time.

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“…Several excellent reports described different researches of luminescence [5], ultraviolet photodetector [6], deep ultraviolet light emitting diodes [7], strain [8] and defects [9] of the WBG semiconductors grown on 2D layered materials. Considerable research efforts have been devoted to the thin film and bulk structures.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of Raman scattering in defect-free AlN nanorods grown on multilayer graphene by van der Waals epitaxy

Xiong

Zheng

et al. 2020

Mater. Res. Express

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The crystalline quality of traditional epitaxy is hampered by the lattice and thermal mismatch of epilayer and substrate. Van der Waals epitaxy (vdWE) allows the epilayer to show no excessive strain and results in low defects density. Here, the multilayer graphene as a substrate for c-axis-oriented growth of vertically aligned AlN nanorods by vdWE have been presented. Defect-free of the AlN nanorods was evidenced through transmission electron microscopy (TEM). The strain of AlN nanorods was reduced with the exponential of height, which was characterized by micro-Raman spectroscopy. Moreover, the temperature dependence of Raman scattering of AlN has been further studied for clarifying the relationship of optical phonons and temperature. This temperature dependence was well matched by an empirical relationship which has proved to be applicable for other III-Nitride (such as GaN, InN) semiconductors.

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Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate

Cited by 80 publications

References 36 publications

Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes

Temperature dependence of Raman scattering in defect-free AlN nanorods grown on multilayer graphene by van der Waals epitaxy

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