Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chengtao; Gan, Lin; Xu, Bingshe; Jiang, Haiwei

doi:10.1186/s11671-018-2546-x

Cited by 20 publications

(14 citation statements)

References 26 publications

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“…3 c), the 3D islands became larger, resulting in coalescence of islands. This tends to transform the GaN from 3D islands to quasi 2D films 39 . However, in respect of precursor-to-substrate distance, only marginal variations in the morphology of GaN films were noticed (Fig.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of gallium nitride and nitrogen doped single layer graphene hybrid heterostructures for high performance photodetectors

Sankaranarayanan

Palanivelu

Ramesh

et al. 2020

Sci Rep

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Gallium nitride (Gan) was epitaxially grown on nitrogen doped single layer graphene (n-SLG) substrates using chemical vapour deposition (cVD) technique. the results obtained using x-ray diffractometer (XRD) revealed the hexagonal crystal structure of GaN. Photoluminescence (PL) spectroscopy, energy dispersive x-ray (EDX) spectroscopy and x-ray photoelectron (XPS) spectroscopy revealed traces of oxygen, carbon and nitrogen occurring either as contamination or as an effect of doping during the GaN growth process. In addition, PL revealed a weak yellow luminescence peak in all the samples due to the presence of N-SLG. From the obtained results it was evident that, presence of n-SLG underneath Gan helped in improving the material properties. it was seen from the currentvoltage (i-V) response that the barrier height estimated is in good agreement with the Schottky-Mott model, while the ideality factor is close to unity, emphasizing that there are no surface and interface related inhomogeneity in the samples. the photodetector fabricated with this material exhibit high device performances in terms of carrier mobility, sensitivity, responsivity and detectivity. The hall measurement values clearly portray that, the GaN thus grown possess high electron contents which was beneficial in attaining extraordinary device performance. The fascinating properties of gallium nitride (GaN) such as wide direct band gap nature, ability to tune the band gap, high breakdown voltage, carrier mobility and chemical stability, make GaN a widely explored semiconductor material. The ability to operate at high power, high frequency and tolerance towards harsh environments is also a reason for preferring GaN 1-8. Conventionally, GaN is epitaxially grown using metal organic chemical vapour deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapour phase vapour epitaxy (HVPE) and chemical vapour deposition (CVD) techniques 9-12. It is worth to note that GaN is still being epitaxially grown on foreign substrates such as silicon (Si), sapphire (Al 2 O 3) and silicon carbide (SiC). Sapphire is conventionally preferred as the substrate material due to its hexagonal crystal structure, availability in high crystalline quality and large area. But, due to the thermal and lattice variations between sapphire substrates and GaN, the aforesaid material properties of GaN cannot be achieved effectively. Also, poor thermal conductivity of sapphire restricts the usage of GaN in high power and optoelectronic devices 13-23. To overcome these deficiencies, it is beneficial to utilize graphene as an intermediate layer for the growth of GaN. Graphene, a two-dimensional (2D) material with a planar honeycomb like configuration of sp 2 hybridized carbon atoms, has attracted enormous interest for use in various optical and electronic device applications due to its unique material properties such as high optical transparency, thermal and electrical conductivity and

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Section: Resultsmentioning

confidence: 99%

Fabrication of gallium nitride and nitrogen doped single layer graphene hybrid heterostructures for high performance photodetectors

Sankaranarayanan

Palanivelu

Ramesh

et al. 2020

Sci Rep

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“…Generally, direct epitaxial deposition can be divided into three steps: 1) mono-oriented nucleation, 2) grain enlargement, and 3) formation of highly oriented continuous film. [21,[23][24][25] The epitaxial growth process has a strict requirement not only on the growth atmosphere, but also on the substrate. Well-designed MOCVD, PLD, and MBE systems could provide a precisely controlled atmosphere, but the highly oriented film can only be grown on single-crystal substrates with minor lattice mismatch.…”

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confidence: 99%

Lattice Orientation Heredity in the Transformation of 2D Epitaxial Films

Smajic

et al. 2021

Advanced Materials

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9999999% has enabled the rapid development of modern information technologies within the last 70 years. [1,2] To meet the more complicated requirement in the coming 5G and big-data era, many other advanced electronic materials have been developed with promising applications in high-level multifunctional chips. They include GaN, [3,4] SiC, [5] diamond, [6] AlN, [7] ZnO, [8] 2D van der Waals (vdW) layered materials, [9] and perovskites. [10] However, preparing highly crystalline mono-oriented films or crystals with minimized defects is still a major bottleneck for these applications. [11][12][13][14][15] Direct epitaxial (Epi) growth has been widely explored to prepare highly oriented or monocrystal thin films in many material systems. The well-demonstrated examples include epitaxial wide bandgap semiconducting nitrides by metal-organic chemical vapor deposition (MOCVD), [4,16] epitaxial oxides (e.g., ZnO, In 2 O 3 , and Ga 2 O 3 ) by pulsed laser deposition (PLD) [17] or molecular beam epitaxy (MBE), [18] and 2D vdW-layered epitaxial films (e.g., graphene, [19] h-BN, [20] MoS 2 , [21] and WS 2 [22] ) by (MO)CVD. Generally, direct epitaxial deposition can be divided into three steps: 1) mono-oriented nucleation, 2) grain enlargement, and 3) formation of highly oriented continuous film. [21,[23][24][25] The epitaxial growth process has a strict requirement not only on the growth atmosphere, but also on the substrate. Well-designed MOCVD, PLD, and MBE systems could provide a precisely controlled atmosphere, but the highly oriented film can only be grown on single-crystal substrates with minor lattice mismatch. [26] For vdW-layered 2D materials, metal substrates are usually needed. For example, graphene and h-BN are usually grown on singlecrystal Cu substrate, [19,20] and single-crystal MoS 2 was recently demonstrated to grow on mono-oriented Au(111) surface. [21] However, these films must be transferred to fabricate devices, which raises a big concern about metal residue contamination. [27] Therefore, these traditional direct epitaxial growth techniques still have many limitations.This manuscript presents a unique process called "lattice orientation heredity" (LOH) for preparing various highlyoriented films, including 2D materials. Our process ensures that the lattice orientation of product films can be inherited by chemical conversion of precursor oxide films. Our process takesThe ability to control lattice orientation is often an essential requirement in the growth of both 2D van der Waals (vdW) layered and nonlayered thin films. Here, a unique and universal phenomenon termed "lattice orientation heredity" (LOH) is reported. LOH enables product films (including 2D-layered materials) to inherit the lattice orientation from reactant films in a chemical conversion process, excluding the requirement on the substrate lattice order. The process universality is demonstrated by investigating the lattice transformations in the carbonization, nitridation, and sulfurization of epitaxial MoO 2 , ZnO, and In 2 O 3 thin films....

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“…From the perspective of crystal growth, stronger catalytic effect is equivalent to smaller nucleation activation energy. The nucleation activation energy E a is expressed as [48,49]:…”

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confidence: 99%

Growth Dynamics of Millimeter‐Sized Single‐Crystal Hexagonal Boron Nitride Monolayers on Secondary Recrystallized Ni (100) Substrates

Tian

Das

et al. 2019

Adv Materials Inter

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Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite

Cited by 20 publications

References 26 publications

Fabrication of gallium nitride and nitrogen doped single layer graphene hybrid heterostructures for high performance photodetectors

Fabrication of gallium nitride and nitrogen doped single layer graphene hybrid heterostructures for high performance photodetectors

Lattice Orientation Heredity in the Transformation of 2D Epitaxial Films

Growth Dynamics of Millimeter‐Sized Single‐Crystal Hexagonal Boron Nitride Monolayers on Secondary Recrystallized Ni (100) Substrates

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