Vacuum ultraviolet optical absorption band of non-bridging oxygen hole centers in SiO2 glass

Hosono, Hideo; Kajihara, Koichi; Suzuki, Takenobu; Ikuta, Yasushi; Skuja, Linards; Hirano, Masahiro

doi:10.1016/s0038-1098(02)00118-7

Cited by 96 publications

(101 citation statements)

References 20 publications

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“…1. We note that this absorption band of NBO ÿ is in the energy range of the recently observed band at 6.4 -6.8 eV attributed to bulk NBO [25,26]. The calculated ionization energy of NBO ÿ is 6.5 eV in edingtonite (see Table I).…”

supporting

confidence: 60%

Electron Trapping at Point Defects on Hydroxylated Silica Surfaces

et al. 2007

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The origin of electron trapping and negative charging of hydroxylated silica surfaces is predicted based on accurate quantum-mechanical calculations. The calculated electron affinities of the two dominant neutral paramagnetic defects, the nonbridging oxygen center, Si-O , and the silicon dangling bond, Si , demonstrate that both defects are deep electron traps and can form the corresponding negatively charged defects. We predict the structure and optical absorption energies of these diamagnetic defects.

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confidence: 60%

Electron Trapping at Point Defects on Hydroxylated Silica Surfaces

et al. 2007

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“…Indeed, the latter gives rise to two absorption bands in the UV range, peaked at 4.8 and 6.4 eV, accompanied by a much weaker band at 2.0 eV. [8][9][10][11] All the three absorptions excite a long-living ͑10 s͒ emission at 1.9 eV which is the most distinctive feature of this defect. 7 NBOHC is currently studied as an important model defect having some almost unique features among defects in oxides related to its weak coupling with the vibrations of the matrix.…”

Section: Introductionmentioning

confidence: 96%

Generation and excitation of point defects in silica by synchrotron radiation above the absorption edge

2010

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“…From that we may conclude that hydrogen H and the hydroxy group OH have a decisive influence on the red non-bridging oxygen hole center NBOHC ≡ Si O -∑, as has been shown already by Hosono et al [7]. Therefore in the present work we want to investigate H + -implanted SiO 2 samples in order to elucidate the role of hydrogen in its interaction with the red luminescent NBOHC center.…”

Section: Silicon Increases the Blue (B) Luminescence But Reduces Thementioning

confidence: 56%

Luminescent defect dynamics in amorphous SiO ₂ :H

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Salh

et al. 2005

phys. stat. sol. (c)

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The main luminescent centers in SiO 2 films are the red luminescence R (1.85 eV) of the non-bridging oxygen hole center (NBOHC) and the oxygen deficient center (ODC) with a blue B (2.7 eV) and a UV band (4.4 eV). Implanted hydrogen diminishes the red luminescence but increases the blue and the UV bands. Thus hydrogen passivates the NBOHC and keeps the ODC's in active emission states. A preliminary model of luminescence center transformation is based on radiolytic dissociation and re-association of mobile oxygen and hydrogen at the centers as well as formation of interstitial H 2 , O 2 , and H 2 O molecules.

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Vacuum ultraviolet optical absorption band of non-bridging oxygen hole centers in SiO2 glass

Cited by 96 publications

References 20 publications

Electron Trapping at Point Defects on Hydroxylated Silica Surfaces

Electron Trapping at Point Defects on Hydroxylated Silica Surfaces

Generation and excitation of point defects in silica by synchrotron radiation above the absorption edge

Luminescent defect dynamics in amorphous SiO ₂ :H

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Vacuum ultraviolet optical absorption band of non-bridging oxygen hole centers in SiO2 glass

Cited by 96 publications

References 20 publications

Electron Trapping at Point Defects on Hydroxylated Silica Surfaces

Electron Trapping at Point Defects on Hydroxylated Silica Surfaces

Generation and excitation of point defects in silica by synchrotron radiation above the absorption edge

Luminescent defect dynamics in amorphous SiO 2 :H

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Product

Resources

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Luminescent defect dynamics in amorphous SiO ₂ :H