UV-sensitive low dark-count PureB single-photon avalanche diode

Qi, Lin; Mok, K.R.C.; Charbon, Edoardo; Nanver, L.K.; Aminian, Mahdi

doi:10.1109/icsens.2013.6688603

Cited by 11 publications

(7 citation statements)

References 21 publications

(4 reference statements)

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“…Secondly, in structural approaches, various photodetector structures have been employed, including a metal-semiconductor-metal (MSM) photodiode, p-n and p-i-n photodiodes, an avalanche photodiode, a photoconductor, and a phototransistor 4,24 . Among them, the MSM structure with back-to-back Schottky contacts provides a low dark current, high S/N level, fast response speed, and compatibility for integration with other circuit components, particularly via simple fabrication methods 25,26 . The MSM-type structure can be fabricated in one step of electrode deposition on a semiconductor material without any deteriorations of device performance from the complicated processes of etching and diffusion, as well as those from the asymmetric traveling lengths of electrons and holes before reaching an electrode.…”

mentioning

confidence: 99%

Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure

Pandit

Schubert

Cho

2020

Sci Rep

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A dual-functional ultraviolet (UV) photodetector with a large UV-to-visible rejection ratio is presented, in which interdigitated finger-type two-dimensional graphene electrodes are introduced to an AlGaN/GaN heterostructure. Two photocurrent generation mechanisms of photovoltaic and photoconductive dominances coexist in the device. The dominance of the mechanisms changes with the induced bias voltage. Below a threshold voltage, the device showed fairly low responsivities but fast response times, as well as a constant photocurrent against the induced bias. However, the opposite characteristics appeared with high bias voltage. Specifically, above the threshold voltage, the device showed high responsivities with additional gain, but slow rise and recovery times. For instance, the responsivity of 10.9 A/W was observed with the gain of 760 at the induced bias voltage of 5 V. This unique multifunctionality enabled by the combination of an AlGaN/GaN heterostructure with graphene electrodes facilitates the development of a single device that can achieve multiple purposes of photodetection.

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mentioning

confidence: 99%

Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure

Pandit

Schubert

Cho

2020

Sci Rep

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“…The n-Si substrate had a nominal doping concentration of 10 15 cm −3 and an n-enhancement layer was formed under the anode by implanting phosphorus to achieve a local doping concentration of 10 17 cm −3 . A detailed description of the processing is given in [12] where similar PureB diodes were fabricated with the addition of a buried n + layer. Four circular diodes, on the same die were selected with diameters (d) of 8 µm, 15 µm, 20 µm and 30 µm; we label these diodes as J8, J15, J20 and J30 respectively.…”

Section: Experimental Amleds and Noisementioning

confidence: 99%

Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes

Agarwal

Annema

Hueting

et al. 2018

IEEE Trans. Electron Devices

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The data transmission capabilities of silicon avalanche mode light-emitting diodes (AMLEDs) were investigated and the results are correlated to the multiplication noise and leakage current. The incoming data were modulated using pulse position modulation and the bit-error-rate (BER) and jitter in the transmitted data were measured. The results indicate an intrinsically low speed in terms of BER and jitter. From various size AMLEDs, temperature variations and optical excitations, it is shown that the speed can be improved by using AMLEDs with a (1) relatively high multiplication noise, (2) relatively high leakage current and (3) higher charge-per-bit. Design recommendations for the high speed AMLEDs are discussed.

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“…The almost ideal and reliable responsivity has been pivotal for the use of PureB layers in semiconductor detector devices for both NUV/VUV/EUV light 2 and low-energy electrons 4 detection. Research is also directed towards fabrication of PureB detectors for high-sensitivity in UV photon starved environments 5 or at low-radiation levels of electrons 6 .…”

Section: Introductionmentioning

confidence: 99%

“…Comparison of the measured5 and simulated DCR as a function of temperature at VEX = 6 V. Contributions of the BTBT, TAT and SRH DCR to the total DCR are indicated.…”

mentioning

confidence: 99%

Minimization of dark counts in PureB SPADs for NUV/VUV/EUV light detection by employing a 2D TCAD-based simulation environment

Knežević

Nanver

Suligoj

2019

Physics and Simulation of Optoelectronic Devices XXVII

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PureB single-photon avalanche diodes (SPADs) were investigated with the aid of a newly developed TCAD-based numerical modeling method with which characteristics related to the avalanching behavior can be simulated. The p + region forming the anode of the PureB p + n photodiode is extremely shallow, only a few nanometer deep, which is essential for obtaining a high photon detection efficiency (PDE) for near-, vacuum-and extreme-ultraviolet (NUV/VUV/EUV) light detection but when an implicit guard ring (GR) is implemented, the dark count rate (DCR) can, despite the GR, be deteriorated at the very sharp corners of the p +-region where there is a high concentration of the electric-field. By comparing measurements to simulations, the main mechanism dominating the DCR in the PureB SPADs was identified as band-toband tunneling (BTBT) while trap-assisted-tunneling also plays a role when the perimeter breakdown is low. Increasing the dose of carriers in the enhancement region negatively impacts the total DCR of the device, but also shifts the origin of the dominant DCR contribution from perimeter to the active region. The simulations for optimization of the SPAD geometry predict that a modification of the n-doped epitaxial region of the PureB SPADs could decrease the DCR by almost two orders of magnitude. This is achieved by increasing the n-epi-layer thickness from 1 µm to 3 µm and lowering the doping from 10 15 cm-3 to 10 14 cm-3. A high electric field at the vertical pn junction in the active region can also be minimized by modifying the implantation parameters of the n-enhancement region thus keeping the BTBT contribution to the DCR sufficiently low.

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UV-sensitive low dark-count PureB single-photon avalanche diode

Cited by 11 publications

References 21 publications

Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure

Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure

Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes

Minimization of dark counts in PureB SPADs for NUV/VUV/EUV light detection by employing a 2D TCAD-based simulation environment

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