Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes

Agarwal, Vishal; Annema, Anne-Johan; Hueting, R.J.E.; Dutta, Satadal; Nanver, L.K.; Nauta, Bram

doi:10.1109/ted.2018.2868126

Cited by 7 publications

(7 citation statements)

References 31 publications

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“…The light emission test (LET) is one of the experiments that can define the effective active area of a SPAD as the avalanche multiplication can lead to the emission of photons [25]- [27]. These photons can be detected using a microscope and image sensor and can help estimate the effective active area of a SPAD.…”

Section: Resultsmentioning

confidence: 99%

Back-Illuminated Double-Avalanche-Region Single-Photon Avalanche Diode

Park,

Eom,

et al. 2024

IEEE J. Select. Topics Quantum Electron.

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The key features of a single-photon avalanche diode (SPAD) are its ability to detect a single photon and provide a digital signal output. The avalanche multiplication process, which generates a detectable electrical signal that can be amplified up to a high voltage without the need for additional circuits, allows SPADs to detect individual photons. Specifically, a SPAD fabricated in CMOS technology can detect near-infrared (NIR) signals, which is a crucial requirement in many applications such as light detection and ranging (LiDAR), time-of-flight (ToF) imaging, and NIR optical tomography. These applications require specific performance characteristics, for example, high photon detection probability (PDP). In this article, we propose an optimized SPAD developed based on 40 nm backside illuminated (BSI) CMOS image sensor (CIS) technology. The SPAD is designed and fabricated using a heavily doped p-type (P+) and a retrograde doped deep n-well (DNW) junction. The dopingoptimized guard-ring (GR) for the expansion of the avalanche multiplication region maximizes PDP, while maintaining its original capability, premature edge breakdown (PEB) prevention at the edge of the junction. We demonstrate the effectiveness of GR optimization by comparing the electrical and optical experimental results with the conventional SPAD. The proposed double-avalanche-region (DAR) SPAD achieves a peak PDP of about 89% at the wavelength of 700 nm and a PDP of 45% at 940 nm, which are the highest values among SPADs reported so far at the excess bias voltage of 2.5 V. The dark count rate (DCR) is 27 cps/μm 2 and the full width at half-maximum (FWHM) of the timing jitter is 89 ps at the same operating condition.

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Section: Resultsmentioning

confidence: 99%

Back-Illuminated Double-Avalanche-Region Single-Photon Avalanche Diode

Park,

Eom,

et al. 2024

IEEE J. Select. Topics Quantum Electron.

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“…These large area emitters rely on the low surface-to-volume ratio to minimize the non-✸✵ radiative recombination on the surface, and thus it is challenging to reduce the emission area while ✸✶ keeping high efficiency. Other strategies include carrier confinement, 16-23 defect activation, 17,24-26 ✸✷ field emission effect, 27 Purcell enhancement, 23,26,28 and avalanche effect [29][30][31] . To date, the Si ✸✸ emitter with the smallest emission area as well as the highest intensity was reported by Schmitt et ✸✹ al.. 23 In their emitter, the carrier recombination is confined in inverse tapered Si half-ellipsoidal ✸✺ nanostructure which is also an optical cavity.…”

Section: ✷✻mentioning

confidence: 99%

A sub-wavelength Si LED integrated in a CMOS platform

Xue

et al. 2022

Preprint

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A nanoscale on-chip light source with high intensity is desired for various applications in integrated photonics systems. However, it is challenging to realize such an emitter using materials and fabrication processes compatible with the standard integrated circuit technology. In this letter, we report an electrically driven Si light-emitting diode (LED) with sub-wavelength emission area fabricated in an open-foundry microelectronics CMOS platform. The LED emission spectrum is centered around 1100 nm and the emission area is smaller than 0.14 μm<2>( ≈ 400 nm diameter). This LED has high spatial intensity of > 50 mW/cm<2> which is comparable with the state-of-the-art Si-based emitters with much larger emission areas. Due to sub-wavelength confinement, the emission exhibits a high degree of spatial coherence, which is demonstrated by incorporating the LED into a compact lensless in-line holographic microscope. This centimeter-scale, all-silicon microscope utilizes a single emitter to simultaneously illuminate ≈ 9.5 million pixels of a CMOS imager.

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“…Secondly, this section only discusses small-signal behavior as done in [5]. For more power efficient (and possibly robust) solutions it would be better to employ transient signals to the AMLED such that it is only turned on just at breakdown, and turned off below it [12], [32]. This is also referred to as On-Off Keying (OOK) [33], [34].…”

Section: Cutoff Frequency (Ft)mentioning

confidence: 99%

Figures of merit of avalanche-mode silicon LEDs

Hueting

Dutta

Agarwal³

et al. 2019

Fifth Conference on Sensors, MEMS, and Electro-Optic Systems

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The silicon avalanche-mode light-emitting diode (AMLED) opens a route for on-chip opto-electronic applications in standard CMOS, both due to its relatively broad spectral overlap with the spectral responsivity of silicon photodiodes and due to its high speed capability. This work presents closed form models for the key figures of merit (FOMs) of AMLEDs, namely, current (or power) density, cut-off frequency, radiative efficiency, and specifically for optical data communication energy cost per photon. Their derivations are based on one-dimensional analyses of an abrupt single-sided (p + n or n + p) junction and of a p-i-n diode. TCAD simulations for optimized device structures, including the recently reported superjunction (SJ) LED, were performed to validate the model. Measurements on single-sided abrupt junctions and SJ diodes are shown to validate some of the modelled trends. The results show that a p-i-n or an SJ diode is favorable to a conventional single-sided junction diode for the AMLED design. In addition, as confirmed for conventional AMLEDs by earlier reports, the results indicate that for a yet higher efficiency the carrier supply should be increased. For this a combination of a separate minority carrier injector and SJLED is proposed, referred to as the injection-avalanche CMOS SJLED. However, more experimental optical data (e.g., absolute photon flux) are needed for a more accurate model validation.

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Data Transmission Capabilities of Silicon Avalanche Mode Light-Emitting Diodes

Cited by 7 publications

References 31 publications

Back-Illuminated Double-Avalanche-Region Single-Photon Avalanche Diode

Back-Illuminated Double-Avalanche-Region Single-Photon Avalanche Diode

A sub-wavelength Si LED integrated in a CMOS platform

Figures of merit of avalanche-mode silicon LEDs

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