Abstract:The silicon avalanche-mode light-emitting diode (AMLED) opens a route for on-chip opto-electronic applications in standard CMOS, both due to its relatively broad spectral overlap with the spectral responsivity of silicon photodiodes and due to its high speed capability. This work presents closed form models for the key figures of merit (FOMs) of AMLEDs, namely, current (or power) density, cut-off frequency, radiative efficiency, and specifically for optical data communication energy cost per photon. Their deri… Show more
The CMOS silicon avalanche-mode lightemitting diode (AMLED) has emerged as a potential light source for monolithic optical interconnects. Earlier we presented a superjunction light-emitting diode (SJLED) that offers a higher electroluminescent intensity compared to a conventional AMLED because of its more uniform field distribution. However, for reducing power consumption lowvoltage (≤15V) SJLEDs are desired, not explored before. In this work we present a TCAD simulation feasibility study of the low-voltage SJLED for various doping concentrations and device dimensions. The results show that for obtaining a constant field, approximately a tenfold more aggressive charge balance condition in the SJLED is estimated than traditionally reported. This is important for establishing a guideline to realize optimized RESURF and SJLEDs in the ever-shrinking advanced CMOS nodes.
The CMOS silicon avalanche-mode lightemitting diode (AMLED) has emerged as a potential light source for monolithic optical interconnects. Earlier we presented a superjunction light-emitting diode (SJLED) that offers a higher electroluminescent intensity compared to a conventional AMLED because of its more uniform field distribution. However, for reducing power consumption lowvoltage (≤15V) SJLEDs are desired, not explored before. In this work we present a TCAD simulation feasibility study of the low-voltage SJLED for various doping concentrations and device dimensions. The results show that for obtaining a constant field, approximately a tenfold more aggressive charge balance condition in the SJLED is estimated than traditionally reported. This is important for establishing a guideline to realize optimized RESURF and SJLEDs in the ever-shrinking advanced CMOS nodes.
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