UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime

Arshad, Mohd Khairuddin; Makovejev, Sergej; Olsen, SH; Andrieu, F.; Raskin, Jean‐Pierre; Flandre, Denis; Kilchytska, Valeriya

doi:10.1016/j.sse.2013.02.051

Cited by 53 publications

(25 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It can be seen that under DG operations, the extra shielding plate i.e BG protects the channel region from the electric field lines from the drain. This in turns improves the SS as the gates acquire better control of the channel region which is in agreement with [14], [19]. Similar results that showed superiority of DG configuration in shielding the channel regions were also observed for GP -A and GP -B structure (thus not shown here).…”

Section: I On and I Offsupporting

confidence: 87%

“…The standard-GP UTBB SOI MOSFET is made up of buried oxide, T BOX = 10 nm and Sibody thickness, T si = 7 nm. The channel is undoped with acceptor concentration of 6.5x10 14 …”

Section: Simulated Device Structurementioning

confidence: 99%

“…Better control of SCEs has been reported with DG configuration since the gate shields the channel from both sides, thus suppressing the penetration of the field from both sides [12]- [14].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Impact of different ground planes of UTBB SOI MOSFETs under the single-gate (SG) and double-gate (DG) operation mode

Othman

Arshad

Hashim

2014

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)

View full text Add to dashboard Cite

In this work, we investigate the impact of different ground planes of UTBB SOI MOSFETs under the single-gate (SG) and double-gate (DG) operation modes by numerical simulations. Simulations were performed for 10 nm gate length UTBB SOI MOSFET of 7 nm thin body (T si ) and 10 nm thin buried oxide (T BOX ) for V d = 20 mV and 1.0 V. For DG operation mode, the back-gate (BG) and front-gate (FG) were swept simultaneously from 0 to 1.5 V with 10 mV incremental steps. Results reported are on key device parameters such as the threshold voltage (V th ), drain induced barrier lowering (DIBL), drive current (I on ), subthreshold swing (SS) and transconductance (g m ). Ground Plane (GP) -B structure which employed a p+ doping under the channel shows the best results under the DG operation mode in terms of the lowest DIBL and SS. However, it recorded a slightly higher V th while the results of I on and g m are comparable with its other GP counterparts.

show abstract

Section: I On and I Offsupporting

confidence: 87%

“…The standard-GP UTBB SOI MOSFET is made up of buried oxide, T BOX = 10 nm and Sibody thickness, T si = 7 nm. The channel is undoped with acceptor concentration of 6.5x10 14 …”

Section: Simulated Device Structurementioning

confidence: 99%

See 1 more Smart Citation

Impact of different ground planes of UTBB SOI MOSFETs under the single-gate (SG) and double-gate (DG) operation mode

Othman

Arshad

Hashim

2014

2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)

View full text Add to dashboard Cite

show abstract

“…Regarding the presence of the GP, it is negligible in conventional mode operation. Analyzing the DT-UTBB operation, a negligible difference was seen for longer devices [10], while an improved gm max was obtained for shorter devices with a GP. It is due to the dynamically decreased V T , which is stronger for devices with GP, i.e., a better back gate coupling, further interfering with the front interface.…”

Section: Introductionmentioning

confidence: 95%

Ground plane influence on enhanced dynamic threshold UTBB SOI nMOSFETs

Sasaki

Manini

Martino

et al. 2014

2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)

View full text Add to dashboard Cite

This paper investigates the ground plane influence on Ultra Thin Body and Buried Oxide (UTBB) FDSOI devices applied in a dynamic threshold voltage (DT) operation (V B =V G ) over the conventional one (V B =0V). The ground plane in enhanced DT (eDT), where the back gate bias is a multiple value of the front gate one (V B =k×V G ), and the inverse eDT mode (V G =k×V B ) were also considered and compared to the other configurations. The presence of the Ground Plane region in all DT configurations results in superior DC parameters like oncurrent/off-current ratio, a steeper subthreshold slope and a higher transconductance.

show abstract

“…The final aim is to deposit on the etched channel between source and drain onto silicon-on-insulator wafer. This allows the modulation of the channel through the back-gate biasing [8,9,10,11,12].…”

Section: Introductionmentioning

confidence: 99%

Preparation and characterization of titanium dioxide thin film for field-effect transistor biosensor application

Fathil¹,

Adzhri²,

Arshad

et al. 2015

2015 2nd International Conference on Biomedical Engineering (ICoBE)

View full text Add to dashboard Cite

This paper presents the method of preparation and characterization of titanium dioxide (TiO2) thin film before deposition on the channel of field-effect transistor (FET) biosensor devices. The TiO2 is prepared using sol-gel technique and is deposited onto the silicon dioxide (SiO2) surface using spin coater. Three different numbers of coating layers (5, 7, and 9 coating layer) of TiO2 are deposited on three SiO2 layer grown on top of Si substrate for investigation. The samples are baked and annealed before being characterized electrically and morphologically. All these results give a helpful indication for the deposition process of the TiO2 thin film as the FET biosensor device on the silicon-on-insulator (SOI) wafer.

show abstract

UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime

Cited by 53 publications

References 35 publications

Impact of different ground planes of UTBB SOI MOSFETs under the single-gate (SG) and double-gate (DG) operation mode

Impact of different ground planes of UTBB SOI MOSFETs under the single-gate (SG) and double-gate (DG) operation mode

Ground plane influence on enhanced dynamic threshold UTBB SOI nMOSFETs

Preparation and characterization of titanium dioxide thin film for field-effect transistor biosensor application

Contact Info

Product

Resources

About