2016
DOI: 10.1088/0957-4484/27/19/195301
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Using low-contrast negative-tone PMMA at cryogenic temperatures for 3D electron beam lithography

Abstract: We report on a 3D electron beam lithography (EBL) technique using polymethyl methacrylate (PMMA) in the negative-tone regime as a resist. First, we briefly demonstrate 3D EBL at room temperature. Then we concentrate on cryogenic temperatures where PMMA exhibits a low contrast, which allows for straightforward patterning of 3D nano- and microstructures. However, conventional EBL patterning at cryogenic temperatures is found to cause severe damage to the microstructures. Through an extensive study of lithography… Show more

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Cited by 21 publications
(16 citation statements)
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“…Low-temperature negative-tone PMMA was found to suffer from an extensive swelling due to trapped gaseous scission products around 70 K that also reduced the etch selectivity in this temperature regime in a drastic way 11 . Low-temperature writing of PMMA also requires a two-step lithography technique to prevent it from peeling when trapped gases burst out 10,32 . In the case of CSAR 62 we did not observe such structural damage for structures written at low-temperatures, which makes it much more suitable for low temperature EBL.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Low-temperature negative-tone PMMA was found to suffer from an extensive swelling due to trapped gaseous scission products around 70 K that also reduced the etch selectivity in this temperature regime in a drastic way 11 . Low-temperature writing of PMMA also requires a two-step lithography technique to prevent it from peeling when trapped gases burst out 10,32 . In the case of CSAR 62 we did not observe such structural damage for structures written at low-temperatures, which makes it much more suitable for low temperature EBL.…”
Section: Resultsmentioning
confidence: 99%
“…Due to the emission properties of most semiconductor quantum dots, such processing has to be performed at low cryogenic temperatures or even liquid helium (l-He) temperature for sufficient signal-to-noise ratio 6 . Naturally, EBL is the most attractive technique to fabricate very precise or even three dimensional device structures with flexible design [7][8][9][10] . This initiates the quest for a detailed understanding of low-temperature-capable electron-beamsensitive resists 11 .…”
Section: Introductionmentioning
confidence: 99%
“…An increasing number of advanced nanotechnological applications require highly repeatable fabrication of 'three-dimensional' devices with complex and precisely-controlled geometries. Depending on the targeted feature size and the complexity of the desired geometry, nanofabrication techniques, such as two-photon polymerization (TPP), 1 imprint lithography, [2][3][4][5] interference lithography, 6 3D molding, 7 electron beam lithography (EBL), [8][9][10] electron beam-induced deposition (EBID), [10][11][12][13] ion beam lithography (IBL), 14 or focused ion beam (FIB) 10,15,16 could be used to fabricate such 3D structures.…”
Section: Introductionmentioning
confidence: 99%
“…In the present era, a rapid advance in micro-fluidic devices is observed owing to the need to perform large-scale applications. Micro-fluidic device fabrication was popularized by the conventional fabrication methods that include lithography [1], casting [2], injection molding [3], and hot embossing [4] on different traditional materials (silicon, glass, etc.) to various polymer materials.…”
Section: Introductionmentioning
confidence: 99%