Unpredictable Bits Generation Based on RRAM Parallel Configuration

Arumí, D.; Gómez-Pau, Álvaro; Manich, Salvador; Rodríguez-Montañés, R.; González, Mireia Bargalló; Campabadal, F.

doi:10.1109/led.2018.2886396

Cited by 24 publications

(12 citation statements)

References 21 publications

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“…Experiments were conducted to assess the feasibility of the proposed cell. The RRAM devices used in the experiments are TiN/Ti/HfO 2 /W structures [20,38]. Figure 8a shows a schematic cross-section of the final device structure.…”

Section: Resultsmentioning

confidence: 99%

“…Moreover, the inherent variability of RRAMs, due to the stochastic nature of their switching mechanism [13], has positioned these devices as one of the most competitive candidates for the development of security primitives [14]. In fact, RRAMs have attracted the attention of the research community for the implementation of PUFs [15][16][17][18][19][20][21][22][23] and true random number generators (TRNGs) [24][25][26][27][28][29]. Nevertheless, RRAM-based circuits may also introduce security vulnerabilities of their own.…”

Section: Introductionmentioning

confidence: 99%

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Serial RRAM Cell for Secure Bit Concealing

et al. 2021

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Non-volatile memory cells are exposed to adversary attacks since any active countermeasure is useless when the device is powered off. In this context, this work proposes the association of two serial RRAM devices as a basic cell to store sensitive data, which could solve this bothersome problem. This cell has three states: ‘1’, ‘0’, and masked. When the system is powered off or the data is not used, the cell is set to the masked state, where the cell still stores a ‘1’ or a ‘0’ but a malicious adversary is not capable of extracting the stored value using reverse engineering techniques. Before reading, the cell needs to be unmasked and it is masked afterwards until the next reading request. The operation of the cell also provides robustness against side-channel attacks. The presented experimental results confirm the validity of the proposal.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Serial RRAM Cell for Secure Bit Concealing

et al. 2021

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“…The emerging ReRAM has been extensively investigated as an artificial synapse candidate for neuromorphic computing and hardware security. [ 262–270 ] Various materials engineering and device architecture designs were implemented in the anti‐irradiation ReRAM. Recently, Li et al.…”

Section: Radiation Effect On Memory Devicesmentioning

confidence: 99%

Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

Muhammad

Wang

Zhang

et al. 2022

Adv Materials Technologies

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These energetic particles, such as electrons, protons, neutrons, X-rays, or gamma rays, induced damage in materials (used in electronic devices) through total ionization and displacement, [4] which would affect the reliability of the electronic devices. [5][6][7] Electronics failure occurs in harsh and inaccessible environments through various paths, such as electromagnetic waves, nuclear reactions, and high-frequency communications systems. Therefore, the radiationhardened requirements of the deployed electronic technology depend on the specific high-energy photons and particles in the radiation environment. For example, Mars exploration requires a special proton anti-radiation in electronics. At the same time, the safety supervision and inspection of the contaminated nuclear area are suggested to be equipped with high resilience towards the alpha, beta, and gamma rays. The development of radiation-hard electric circuits over the years has led researchers to consider the application of functional anti-irradiation material to devices. The current focus is on developing complementary metal-oxide semiconductors (CMOS) with wide bandgap semiconductors (WBGs), which are well suited to large-area aerospace applications. [8][9][10] As shown in Figure 1, a notable material class of WBGs can be listed as metal oxides (MOS), transition-metal dichalcogenides (TMDs), silicon carbide, gallium nitride, and others. WBGs materials contribute robust properties under harsh conditions due to their strong electronic compliance, high-temperature competence, and strong atomic bond energy. [11][12][13][14][15][16] They have been proposed as favorable materials for aerospace and other radiation-hardened applications. Generally, the bandgap in the semiconductor reflects the extra energy that a valence electron must access to become a free electron. Its large bandgap of more than 3 eV guarantees inherent reliability in the semiconductors, providing transparency for the low-energy photons. The large, spherical nsorbitals in the conduction band (CB) of MOS also play a critical role in high dopability for hosting a high density of electrons, leading to the remarkably tolerance to various radiation fluences. [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] Understanding the apparent immunity of the WBGs to various radiation environments and radiation-hard electronic engineering would be critical for pushing the technology further and understanding its limitations. Efforts to address these issues have been underway over the past two decades. Substantial progress has also been made in designing radiation-hard thin films transistors (TFTs) with ZnO, Ga 2 O 3 , In 2 O 3 , SnO 2 , IGZO, SiC, GaN, and many other WBGs, The aspiration of electronic technologies that are resistant to high-energy cosmic radiation is essential for current harsh radiation environment exploration. Integrated circuits mostly require post-processing after designing, making their structures more complex than the standard systems. Thus, unique de...

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“…Deep in the IoT era, the connected devices must be cheap and low consuming, but also reliable and secure. In this context, RRAMs arises as an outstanding technology for the development of security primitives [11] such as PUFs (Physical Unclonable Functions) [12][13][14][15][16][17][18][19] and TRNGs (True Random Number Generators) [20][21][22][23]. In these applications, regardless of the technology, essential security criteria must be fulfilled to prevent an adversary from extracting information, and thus devices must be secure against attacks.…”

Section: Introductionmentioning

confidence: 99%

Impact of Laser Attacks on the Switching Behavior of RRAM Devices

et al. 2020

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The ubiquitous use of critical and private data in electronic format requires reliable and secure embedded systems for IoT devices. In this context, RRAMs (Resistive Random Access Memories) arises as a promising alternative to replace current memory technologies. However, their suitability for this kind of application, where the integrity of the data is crucial, is still under study. Among the different typology of attacks to recover information of secret data, laser attack is one of the most common due to its simplicity. Some preliminary works have already addressed the influence of laser tests on RRAM devices. Nevertheless, the results are not conclusive since different responses have been reported depending on the circuit under testing and the features of the test. In this paper, we have conducted laser tests on individual RRAM devices. For the set of experiments conducted, the devices did not show faulty behaviors. These results contribute to the characterization of RRAMs and, together with the rest of related works, are expected to pave the way for the development of suitable countermeasures against external attacks.

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Unpredictable Bits Generation Based on RRAM Parallel Configuration

Abstract: Aquesta és una còpia de la versió author's final draft de l'article Unpredictable bits generation based on RRAM parallel configuration publicat a IEEE electron device letters.

Cited by 24 publications

References 21 publications

Serial RRAM Cell for Secure Bit Concealing

Serial RRAM Cell for Secure Bit Concealing

Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

Impact of Laser Attacks on the Switching Behavior of RRAM Devices

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