Serial RRAM Cell for Secure Bit Concealing

Yang, Binbin; Arumí, D.; Manich, Salvador; Gómez-Pau, Álvaro; Rodríguez-Montañés, R.; González, M.B.; Campabadal, F.; Fang, Liang

doi:10.3390/electronics10151842

Cited by 4 publications

(1 citation statement)

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“…The methods deter attackers from gaining sensitive information on the PUFs and can alert the client of unauthorized access. Typical approaches often include burying sensitive circuitry beneath layers of metal interconnects and layout obfuscation (Liu et al, 2016), masking bits so that responses are physically hidden (bit concealing) (Yang et al, 2021), or tamper-proof envelopes (Garb et al, 2021) which typically need to be continuously powered. For example, in (Liu et al, 2016), the sense amplifiers (S/A), which read out the responses, are buried beneath the ReRAM array.…”

Section: Tamper-sensitive Resistive Randomaccess Memory-based Physica...mentioning

confidence: 99%

Tamper-sensitive pre-formed ReRAM-based PUFs: Methods and experimental validation

Wilson

Cambou²

2022

Front. Nanotechnol.

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In this paper, we present the characterization of pre-formed resistive random access memories to design physical unclonable functions and experimentally validate inherent properties such as tamper sensitivity and a self-destroy mode. The physical unclonable functions were tested for repetitive use, temperature effects, and aging. The variations during successive response generation cycles and drift rates are quantized to explore their reliability. We define tamper-sensitivity as the ability to detect tampering attacks. To establish tamper sensitivity, the cells were characterized for higher current sweeps, and the injected current at which they break down is extracted and analyzed to determine suitable operating ranges. Our experimental results show that at least 91% of the cells can generate keys protected by the scheme, while 22% of the sensing elements are triggered. Finally, the cells were characterized for high Voltage sweeps to be able to destroy the physical unclonable functions on-demand when tampering activity is detected. A fixed Voltage of 1.9 V is enough to destroy the entire array.

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Section: Tamper-sensitive Resistive Randomaccess Memory-based Physica...mentioning

confidence: 99%

Tamper-sensitive pre-formed ReRAM-based PUFs: Methods and experimental validation

Wilson

Cambou²

2022

Front. Nanotechnol.

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Spinel ferrites for resistive random access memory applications

Gayakvad,

Somdatta,

Mathe

et al. 2023

emergent mater.

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Cutting edge science and technology needs high quality data storage devices for their applications in artificial intelligence and digital industries. Resistive random access memory (RRAM) is an emerging nonvolatile memory used for recording and reproducing the digital information. Earlier studies on RRAM applications suggest that spinel ferrite is a potential material. We envisage that the spinel ferrite prepared by a particular route, namely spin coating, will in future optimize the essential parameters for optimal functioning of RRAM. An assertion to our assumptions, few researchers have already obtained important findings for spin coated spinel ferrites. Spin coated spinel ferrites, namely zinc ferrite, nickel ferrite, cobalt ferrite and mixed spinel ferrites, have been investigated for their applications as switching layers in RRAM devices. Particularly, spin coated cobalt ferrite, nickel ferrite and doped nickel ferrite were widely used as resistive switching layers. However, it is noticed that there is a tremendous scope for synthesis and resistive switching characterization of spin coated pure and doped zinc ferrite. Proper doping of special element into spinel ferrite can enhance the resistive switching performance of RRAM devices. Insertion of nano structures and metal layers within switching layer uplifts the performance of spin coated spinel ferrite-based RRAM devices. Active layer in RRAM device synthesized by spin coating technique exhibited good resistive switching properties, namely retention of $$10^{3}$$ 10 3 to $$10^{5}$$ 10 5 s, endurance in the range of $$10^{2}$$ 10 2 to 22,500 cycles and memory window of $$10^{2}$$ 10 2 to $$10^{6}$$ 10 6 . This review article accounts for the optimized parameters obtained especially for the spinel ferrite-based active material synthesized by spin coating justifying the results with appropriate theory. A good co-relation between synthesis parameters and the RRAM functional parameter is separately discussed at the end of review article.

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