Unipolar Resistive Switching Effects Based on Al/ZnO/P ⁺⁺ -Si Diodes for Nonvolatile Memory Applications

Abstract

Al/ZnO/P ++ -Si diodes exhibit typical unipolar resistive switching behaviors. The electroforming-free characteristics are observed after annealing the ZnO thin film at 400 ∘ C in air. The ON/OFF ratios of the resistance are in the range of 10 4 -10 5 at a very low operation voltage of 0.1 V, and the devices show good endurance characteristics of over 400 cycles with negligible reduction. Finally, the memory mechanisms of the diodes are proposed on the basis of the current-voltage and resistance-voltage results. These results indicate that Al/ZnO/P ++ -Si devices have potential applications in nonvolatile memory devices.

Negative Differential Resistance Behavior and Memory Effect in Laterally Bridged ZnO Nanorods Grown by Hydrothermal Method

“…The current density of the fabricated memory cell measured from the insert in Figure a approached 3 × 10 4 A cm ‑2 . This current density is large enough to induce a thermally assisted electromigration , of oxygen vacancies at the NR/NR interfaces caused by the accompanying Joule heating effect. , According to previous literature, the RS behavior may be highly related to the oxygen vacancies and/or zinc interstitials confined on the surface of ZnO NRs. ,, …”

“…41,42 According to previous literature, the RS behavior may be highly related to the oxygen vacancies and/or zinc interstitials confined on the surface of ZnO NRs. 31,43,44 Figure 6d shows the schematic presentation of the regions of filament generation and ohmic conduction. The defects concentrated at the boundaries of NR/NR interfaces.…”

Electrical characteristics of (AgNPs-PVA)-based Schottky diode and its application as a low-voltage varistor devices

“…When n = 1, the mechanism is linear and attributed to ohmic conduction, but the mechanism is nonlinear when 1 > n 2; the conduction mechanism is determined by space charge limited current (SCLC) as described in Refs [55][56][57]. According to the SCLC theory, the values of power n in the two nonlinear regions in the forward direction are 4 and 2, which correspond to the trap charge limited current (TCLC) [58,59] and SCLC [11,60,61] mechanisms, respectively. In the two nonlinear regions in the reverse direction, current follows a lower than square and square dependence on voltage (n = 1.4 and 2), which corresponds to the Schottky or Poole Frenkel, and SCLC [60,62] mechanisms, respectively.…”

“…According to the SCLC theory, the values of power n in the two nonlinear regions in the forward direction are 4 and 2, which correspond to the trap charge limited current (TCLC) [58,59] and SCLC [11,60,61] mechanisms, respectively. In the two nonlinear regions in the reverse direction, current follows a lower than square and square dependence on voltage (n = 1.4 and 2), which corresponds to the Schottky or Poole Frenkel, and SCLC [60,62] mechanisms, respectively. The accumulation of charge carriers in the SCLC region is much higher than the required density in the film, which correlates to the current.…”

Designing of spin filter devices based on zigzag zinc oxide nanoribbon modified by edge defect*

“…Spintronics is a promising field for the next-generation electronic devices, which have lower energy consumption and faster electronic systems due to the use of electron intrinsic spin states to carry information. [1][2][3] Although spinbased electronic devices are currently used in commercial magnetic-field sensors and nonvolatile memory devices, [4] the spin states in the transport process are a major challenge in the field of spintronics because spin-orbital coupling and scattering can change their intrinsic spin state. [5] A spin filter is an important device for processing spin states.…”