Supramolecular steric hindrance designs make pyrene-functionalized spiro[fluorene-9,7'-dibenzo[c,h]acridine]-5'-one (Py-SFDBAO) assemble into 2D nanostructures that facilitate aqueous phase large-area synthesis of high-quality and uniform crystalline thin films. Thin-film diodes using aqueous nanosheets as active layers exhibit a non-volatile bistable electrical switching feature with ON/OFF ratios of 6.0 × 10(4) and photoswitching with conductive gains of 10(2) -10(3). Organic nanosheets are potentially key components for eco-friendly aqueous dispersed organic nano-inks in the application of printed and flexible electronics.
We demonstrated write-once-read-many-times (WORM) memory devices based on graphene oxide (GO) film sandwiched between ITO and LiF/Al electrode. The devices showed irreversible electrical transition from the low conductivity (OFF) state to the high conductivity (ON) state and the ON/OFF current ratio between the conductivities of two states was over 5.7 × 104. The results of I-V data, AFM and SEM images indicated that the WORM memory characteristics of GO diodes were mainly attributed to charge trapping at GO layers and interfacial properties between GO and LiF/Al electrode.
Al/ZnO/P ++ -Si diodes exhibit typical unipolar resistive switching behaviors. The electroforming-free characteristics are observed after annealing the ZnO thin film at 400 ∘ C in air. The ON/OFF ratios of the resistance are in the range of 10 4 -10 5 at a very low operation voltage of 0.1 V, and the devices show good endurance characteristics of over 400 cycles with negligible reduction. Finally, the memory mechanisms of the diodes are proposed on the basis of the current-voltage and resistance-voltage results. These results indicate that Al/ZnO/P ++ -Si devices have potential applications in nonvolatile memory devices.
We investigate the memory properties of the ITO/graphene oxide/Al diodes. It is found that the devices show different memory behaviors with the diverse geometry and thickness of Al. When the thickness of the Al electrode is relatively thick, the device of the cross-point Al electrode shows a three-level memory effect, and the counterpart device of the cross-bar Al electrode exhibits a volatile static random access memory effect. When the thickness of the Al electrode is thinner, the above devices demonstrate a flash memory effect. The different memory behaviors of ITO/GO/Al diodes are ascribed to the mode and degree of reduction and oxidation of GO.
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