Physically based models of hot-carrier stress and dielectric-field-enhanced thermal damage have been incorporated into a TCAD tool with the aim of investigating the electrical degradation in integrated power devices over an extended range of stress biases and ambient temperatures. An analytical formulation of the distribution function accounting for the effects of the full band structure has been employed for hot-carrier modeling purposes. A quantitative understanding of the kinetics and local distribution of degradation is achieved, and the drift of the most relevant parameters is nicely predicted on an extended range of stress times and biases. Index Terms-Hot carrier, lateral double-diffused MOS (DMOS) (LDMOS), TCAD simulation, thermal degradation.

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A novel memory device based on laterally bridged ZnO nanorods (NRs) in the opposite direction was fabricated by the hydrothermal growth method and characterized. The electrodes were defined by a simple photolithography method. This method has lower cost, simpler process, and higher reliability than the traditional focused ion beam lithography method. For the first time, the negative differential resistance and bistable unipolar resistive switching (RS) behavior in the current-voltage curve was observed at room temperature. The memory device is stable and rewritable; it has an ultra-low current level of about 1 × 10(-13) A in the high resistance state; and it is nonvolatile with an on-off current ratio of up to 1.56 × 10(6). Moreover, its peak-to-valley current ratio of negative differential resistance behavior is greater than 1.76 × 10(2). The negative differential resistance and RS behavior of this device may be related to the boundaries between the opposite bridged ZnO NRs. Specifically, the RS behavior found in ZnO NR devices with a remarkable isolated boundary at the NR/NR interface was discussed for the first time. The memory mechanism of laterally bridged ZnO NR-based devices has not been discussed in the literature yet. In this work, results show that laterally bridged ZnO NR-based devices may have next-generation resistive memories and nanoelectronic applications.

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Interface control of the filament types and the resistive switching behavior of apple pectin (AP) memory devices were systematically investigated using different sputtering plasmas. Supported by the temperature dependence of resistance and line-scan profiles, it can be observed that the sharp interface between the direct current (DC) Al and AP layer of the DC Al/AP/ITO structure showed semiconducting behavior. In the case of the radio frequency (RF) Al/AP/ITO structure, the transition from the metallic to semiconducting behavior occurred at 333 K. The transformation of filament types was a direct consequence of Al diffusion from the RF Al electrode. The diffused Al atoms from the RF Al electrode contributed to the creation of metallic filamentary channels. Moreover, the metal Al effectively diffused through RF sputtering, leading to the formation of an interfacial oxide layer between the Al electrode and the AP thin film. The role of the interfacial layer in enabling stable resistive switching and high device performance in the Al/AP/ITO resistive memory device was revealed. The AP memory device demonstrated a promising ON/OFF ratio of over 107 with uniform electrical distribution and stable retention. Understanding the underlying switching mechanisms of AP memory devices may pave the way toward smart bioelectronics.