A facile method for the chemoselective reduction of graphene oxide (CrGO) has been developed via silver(I)-catalyzed decarboxylation. CrGO was characterized by X-ray photoelectron spectroscopy and X-ray diffraction. CrGO can be well-dispersed in most polar solvents, facilitating its nanosheet thin film preparation via a spin coating solution process for device fabrication. A proof of concept nonvolatile organic transistor memory device using CrGO as the charge-trapping layer showed a larger memory window of over 60 V and a higher ON/OFF current ratio of up to 10 4 compared to that of the precursor, graphene oxide (GO).decarboxylation of 1-naphthoic acid, elemental composition of GO, CGO and CrGO as determined by XPS, Raman and thermogravimetric analysis spectra, the output and transfer curves of GO and CrGO based organic nonvolatile memory transistors. See

Al/ZnO/P ++ -Si diodes exhibit typical unipolar resistive switching behaviors. The electroforming-free characteristics are observed after annealing the ZnO thin film at 400 ∘ C in air. The ON/OFF ratios of the resistance are in the range of 10 4 -10 5 at a very low operation voltage of 0.1 V, and the devices show good endurance characteristics of over 400 cycles with negligible reduction. Finally, the memory mechanisms of the diodes are proposed on the basis of the current-voltage and resistance-voltage results. These results indicate that Al/ZnO/P ++ -Si devices have potential applications in nonvolatile memory devices.

A nonvolatile write-once-read-many-times (WORM) memory device based on the ITO/poly(N-vinylcarbazole) (PVK)/SiO2 nanoparticles (SiO2 NPs)/PVK/Al structure is demonstrated. By employing SiO2 NPs, the ON/OFF current ratio of the device is enlarged from 20 to 7 × 102 at a low voltage, and the device shows obvious negative differential resistance (NDR) phenomenon at a high electric field. Compared with the ITO/PVK/Al and ITO/PVK/PVK/Al devices, it is found that the size of the SiO2 NPs sandwiched between two PVK layers plays an important role in enhancing the reproducibility and the ON state retention time of the WORM memory device. The WORM memory mechanisms of the device are investigated on the basis of the current–voltage (I–V) characteristics and scanning electron microscopy image. Here, the strength of the NDR effect in our devices is only related to the charge defects and traps of PVK films, and it can be enlarged by embedding charge traps into the PVK films.

No abstract