Unified theory of silicon carbide oxidation based on the Si and C emission model

Goto, Daisuke; Hijikata, Yasuto

doi:10.1088/0022-3727/49/22/225103

Cited by 36 publications

(30 citation statements)

References 45 publications

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“…our robust oxidations which accumulate oxidation-induced strain 12 as well as oxidation-induced interstitial atoms 13 in the interface region. Another important difference is the usage of device-grade epitaxial layers, which may prevent the easy formation of SPSs inside MOSFETs.…”

Section: -3mentioning

confidence: 95%

Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

Abe

Umeda

Okamoto

et al. 2018

Applied Physics Letters

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We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor fieldeffect transistors (MOSFETs). They are formed in the SiC/SiO 2 interface regions of wet-oxidation C-face 4H-SiC MOSFETs and were not found in other C-face and Si-face MOSFETs. Their bright room-temperature photoluminescence (PL) was observed in the range from 550 to 750 nm and revealed variable multi-peak structures as well as variable peak shifts. We characterized a wide variety of their PL spectra as the inevitable variation of local atomic structures at the interface. Their polarization dependence indicates that they are formed at the SiC side of the interface. We also demonstrate that it is possible to switch on/off the SPSs by a bias voltage of the MOSFET.

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Section: -3mentioning

confidence: 95%

Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

Abe

Umeda

Okamoto

et al. 2018

Applied Physics Letters

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“…The observed oxidation layer thickness on Si was around 3.2 μm; however, CVI‐SiC was not oxidized. The elementary oxidation reaction of SiC is expressed by

SiC + {normalO}_{2} \to {SiO}_{2} + C (Δ G_{normalo} = - 624 kJ / mol at 1300 K) .

…”

Section: Resultsmentioning

confidence: 99%

“…The observed oxidation layer thickness on Si was around 3.2 μm; however, CVI-SiC was not oxidized. The elementary oxidation reaction of SiC is expressed by 29,30,55 The Gibbs energy change of Reaction 17 was less negative than that of the oxidation of Si. Therefore, CVI-SiC was not oxidized due to the sacrificial protection mechanism (Section 3.3).…”

Section: Oxidation Behavior Of Monolithicmentioning

confidence: 99%

“…The oxidation behavior of SiC f /SiC composites is a critical issue for structural component applications in elevated temperatures such as turbines. The oxidation behavior of Si and SiC is known to be superior to other materials . However, the oxidation resistance of silicides and eutectic alloys should be clarified.…”

Section: Introductionmentioning

confidence: 99%

“…The oxidation behavior of Si and SiC is known to be superior to other materials. [23][24][25][26][27][28][29][30] However, the oxidation resistance of silicides and eutectic alloys should be clarified. The oxidation behavior of several silicides has been reported.…”

mentioning

confidence: 99%

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Oxidation mechanisms of SiC‐fiber–reinforced Si eutectic alloy matrix composites at elevated temperatures

et al. 2019

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SiC‐fiber–reinforced binary Si eutectic alloy composites have been developed for aerospace applications using the melt infiltration method. In this study, the oxidation mechanisms of various binary Si eutectic alloys were evaluated at elevated temperatures. We suggest that the oxidation resistance of eutectic alloys could be predicted using the Gibbs energy change for the oxidation reaction. Based on these calculations, eutectic alloys of Si‐16at%Ti, Si‐17at%Cr, Si‐22at%Co, Si‐38at%Co, and Si‐27at%Fe were prepared. These alloys produced uniform SiO2 layers and showed the same oxidation resistance as Si at 1000°C under humid conditions. Therefore, SiC composites using Si alloys with excellent oxidation resistance can be predicted using thermodynamic calculations.

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Process Model for SiC Oxidation for a Large Range of Conditions

Zechner,

Johnsson,

Fidler

et al. 2024

Physica Status Solidi (a)

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A comprehensive process model for 4H‐SiC oxidation is created and calibrated against a very large collection of experimental data. The model reproduces measured oxide thickness for Si‐face, C‐face, and a‐face SiC wafers, in the temperature range 950–1500 °C, in the pressure range 0.25–4.0 atm, in the thickness range 3–1600 nm, and for SiC doping ranging between 1019 cm−3 n‐type and 1019 cm−3 p‐type. The model is based on the Massoud model: Oxidation is driven by oxidants (O2, H2O) which are present in the gas phase, diffuse through the oxide, and form SiO2 at the oxide–SiC interface. For thin oxides, the interface reaction rate includes empirical correction terms which add to the oxidation rate, and which asymptotically approach zero with increasing oxide thickness. For dry oxidation, a remarkable dependence on the O2 partial pressure is discovered: For thick oxides, the oxidation rate scales linearly with the pressure, but the correction term for thin oxides scales with the square root of the pressure. This suggests that the atomistic processes responsible for the fast initial growth of oxides involve the splitting of O2 molecules into two O atoms.

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Unified theory of silicon carbide oxidation based on the Si and C emission model

Cited by 36 publications

References 45 publications

Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

Oxidation mechanisms of SiC‐fiber–reinforced Si eutectic alloy matrix composites at elevated temperatures

Process Model for SiC Oxidation for a Large Range of Conditions

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