Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

Abe, Yuta; Umeda, T.; Okamoto, Mitsuo; Kosugi, Ryoji; Harada, Shinsuke; Haruyama, Moriyoshi; Kada, Wataru; Hanaizumi, Osamu; Onoda, Shinobu; Ohshima, Takeshi

doi:10.1063/1.4994241

Cited by 25 publications

(31 citation statements)

References 16 publications

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“…The low-temperature PL spectrum at the radiation point exhibits a very sharp peak at 580 nm, while a broad peak is observed around 610 nm at RT. The spectra in the inset of figure 4, derived by subtracting the background spectrum, also indicate that the broad peak at RT is red-shifted from the sharp peak at 80 K. Thus, the broad peak observed at RT is entirely composed of PSB, which is observed as the ZPL solely at 80 K. This interpretation corroborates a previous study [20] but contradicts another study [21]. This will be discussed further in a future report.…”

Section: Resultssupporting

confidence: 80%

Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals

et al. 2018

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The formation of high-brightness single-photon sources (SPSs) that emit single photons at room temperature was recently confirmed in oxygen-annealed SiC semiconductors (surface SPSs.) However, the defect structure of surface SPSs remains unclear, which makes device fabrication and property control difficult. To verify the incorporation of oxygen in surface SPSs, we fabricated SPSs using stable 18 O isotopes as oxidants. By comparing this to the case of natural oxygen annealing, we found that the SP emission spectra for the 18 O sample tended to have shorter peak wavelengths, slightly narrower peak widths, and higher intensities. Thus, it appeared that, in the case of the 18 O sample, the phonon sideband was located closer to the zero-phonon line and that oxygen was incorporated into the defects attributed to the surface SPS.

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Section: Resultssupporting

confidence: 80%

Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals

et al. 2018

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“…Each consists of sharp high-energy local-vibration modes between 150 and 220 meV. These are greater in energy than the highest first-order Raman mode found in SiC (120 meV, or 960 cm −1 ) and have energy ranges consistent with the vibrational modes of carbon and possibly oxygen-related bonds in SiC [26,42,43]. The source of the excess C is a by-product of the thermal-oxidation process and is known to make a considerable contribution to defects near or at the SiC/SiO 2 interface [3,44,45].…”

Section: Resultsmentioning

confidence: 89%

“…Photoluminescence (PL) has also been used extensively to characterize deep-level defects in bulk SiC. Recently, the optical properties of defects formed after oxidation near the SiC/SiO 2 interface were also investigated [22][23][24][25][26][27][28][29][30][31]. These defects can be addressed individually when an appropriate excitation wavelength is used.…”

Section: Introductionmentioning

confidence: 99%

Optically Active Defects at the SiC/SiO2 Interface

et al. 2019

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The SiC/SiO 2 interface is a central component of many SiC electronic devices. Defects intrinsic to this interface can have a profound effect on their operation and reliability. It is therefore crucial to both understand the nature of these defects and develop characterization methods to enable optimized SiCbased devices. Here we make use of confocal microscopy to address single SiC/SiO 2-related defects and show the technique to be a noncontact, nondestructive, spatially resolved and rapid means of assessing thequality of the SiC/SiO 2 interface. This is achieved by a systematic investigation of the defect density of the SiC/SiO 2 interface by varying the parameters of a nitric oxide passivation anneal after oxidation. Standard capacitance-based characterization techniques are used to benchmark optical emission rates and densities of the optically active SiC/SiO 2-related defects. Further insight into the nature of these defects is provided by low-temperature optical measurements on single defects.

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“…Contradicting explanations of the nature of these dangling bonds can be found in the literature, suggesting either carbon [33][34][35][36] or silicon dangling bonds [37][38][39]. Considering the large number of zero-phonon lines observed in low and room temperature PL for similar oxidation processes on 4H-C [40,41], correlated C dangling bonds with large varieties of possible geometries and backbone structures as proposed in Ref. [33] might be likely candidates.…”

Section: Discussionmentioning

confidence: 77%

Two-dimensional defect mapping of the SiO2/4H−SiC interface

Woerle

Johnson

Bongiorno

et al. 2019

Phys. Rev. Materials

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Current generations of 4H-SiC metal-oxide-semiconductor field-effect transistors are still challenged by the high number of defects at the SiO 2 /SiC interface that limit both the performance and gate reliability of these devices. One potential source of the high density of interface defect states (D it) is the stepped morphology on commonly used off-axially grown epitaxial surfaces, favoring incomplete oxidation and the formation of defective transition layers. Here we report measurements on intentionally modified 4H-SiC surfaces exhibiting both atomically flat and stepped regions where the generation of interface defects can be directly linked to differences in surface roughness. By combining spatially resolving structural, chemical, optical, and electrical analysis techniques, a strong increase of D it for stepped surfaces was revealed while regions with an atomically flat SiC surface exhibited close-to-ideal interface properties.

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Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

Cited by 25 publications

References 16 publications

Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals

Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals

Optically Active Defects at the SiC/SiO2 Interface

Two-dimensional defect mapping of the SiO2/4H−SiC interface

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