Optically Active Defects at the 
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 Interface

Johnson, Brett C.; Woerle, Judith; Haasmann, Daniel; Lew, C. T.-K.; Parker, R.; Knowles, Helena S.; Pingault, Benjamin; Atatüre, Mete; Gali, Ádám; Dimitrijev, Sima; Camarda, Massimo; McCallum, Jeffrey C.

doi:10.1103/physrevapplied.12.044024

Cited by 22 publications

(22 citation statements)

References 44 publications

(58 reference statements)

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“…Contradicting explanations of the nature of these dangling bonds can be found in the literature, suggesting either carbon [33][34][35][36] or silicon dangling bonds [37][38][39]. Considering the large number of zero-phonon lines observed in low and room temperature PL for similar oxidation processes on 4H-C [40,41], correlated C dangling bonds with large varieties of possible geometries and backbone structures as proposed in Ref. [33] might be likely candidates.…”

Section: Discussionmentioning

confidence: 77%

Two-dimensional defect mapping of the SiO2/4H−SiC interface

Woerle

Johnson

Bongiorno

et al. 2019

Phys. Rev. Materials

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Current generations of 4H-SiC metal-oxide-semiconductor field-effect transistors are still challenged by the high number of defects at the SiO 2 /SiC interface that limit both the performance and gate reliability of these devices. One potential source of the high density of interface defect states (D it) is the stepped morphology on commonly used off-axially grown epitaxial surfaces, favoring incomplete oxidation and the formation of defective transition layers. Here we report measurements on intentionally modified 4H-SiC surfaces exhibiting both atomically flat and stepped regions where the generation of interface defects can be directly linked to differences in surface roughness. By combining spatially resolving structural, chemical, optical, and electrical analysis techniques, a strong increase of D it for stepped surfaces was revealed while regions with an atomically flat SiC surface exhibited close-to-ideal interface properties.

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Section: Discussionmentioning

confidence: 77%

Two-dimensional defect mapping of the SiO2/4H−SiC interface

Woerle

Johnson

Bongiorno

et al. 2019

Phys. Rev. Materials

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“…The emission spectra for the 18 O SPSs tended to be blue shifted, slightly narrower peak widths, and higher intensities if compared to natural oxygen annealing indicating that oxygen was incorporated into the defects attributed to the surface emitters [130]. These surface defects are by themselves remarkably interesting for applications, and they have been recently used to assess the quality of the SiC/SiO 2 interface [131]. Here a systematic investigation of the defect density of the SiC/SiO 2 interface was performed by varying the parameters of nitric oxide passivation anneal after oxidation.…”

Section: Optically and Electrically Driven Single Photon Sources (Spss)mentioning

confidence: 99%

Silicon carbide color centers for quantum applications

2020

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Silicon carbide has recently surged as an alternative material for scalable and integrated quantum photonics, as it is a host for naturally occurring color centers within its bandgap, emitting from the UV to the IR even at telecom wavelength. Some of these color centers have been proved to be characterized by quantum properties associated with their single-photon emission and their coherent spin state control, which make them ideal for quantum technology, such as quantum communication, computation, quantum sensing, metrology and can constitute the elements of future quantum networks. Due to its outstanding electrical, mechanical, and optical properties which extend to optical nonlinear properties, silicon carbide can also supply a more amenable platform for photonics devices with respect to other wide bandgap semiconductors, being already an unsurpassed material for high power microelectronics. In this review, we will summarize the current findings on this material color centers quantum properties such as quantum emission via optical and electrical excitation, optical spin polarization and coherent spin control and manipulation. Their fabrication methods are also summarized, showing the need for on-demand and nanometric control of the color centers fabrication location in the material. Their current applications in single-photon sources, quantum sensing of strain, magnetic and electric fields, spin-photon interface are also described. Finally, the efforts in the integration of these color centers in photonics devices and their fabrication challenges are described.proved to host these types of color centers, we can now determine that the material has approached the quality needed for quantum applications development.The first bulk material studied for applications in quantum technology is diamond. It was possible to isolate single color centers and determine their role for application in quantum technologies. As an example, the nitrogen-vacancy (NV) center [10], hosted by the diamond matrix, has become the leading color center in applications such as quantum sensing [11], which is a more achievable application on the road map towards quantum networks. Further, other color centers such as the Germanium vacancy (GeV) [12] and the siliconvacancy (SiV) [13] in diamond proved to have an enormous potential for quantum optical spin-photon interface due to their narrow bandwidth emission [14]. The wide bandgap of the diamond, together with its weak spinorbit coupling and diluted nuclear-spin bath, gives to diamond color centers a remarkable spin coherence, and isotope engineering can enhance it further, due to the possibility of growing highly pure samples [15]. SiC also enjoys most of these properties, and benefits from mature production protocols on a large scale which are available for silicon, excellent nanofabrication quality [16], and capability of ion implantation without the side effects typical of the diamond, such as graphitization during irradiation [17]. However, diamond has some limitations in this respect in...

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“…The SiC/SiO 2 interface can have a profound impact on the optical properties of SiC. [ 6 ] Optically active defects with emission in the red part of the spectrum may be related to carbon clusters which form at or near the interface during oxidation. This is described by the “Carbon Cluster Model.” [ 115,116 ] The density of these optically active defects that reside at the SiC/SiO 2 interface can be reduced by post‐oxidation annealing in NO or N 2 O ambient.…”

Section: Sic Nanoparticlesmentioning

confidence: 99%

“…This is described by the “Carbon Cluster Model.” [ 115,116 ] The density of these optically active defects that reside at the SiC/SiO 2 interface can be reduced by post‐oxidation annealing in NO or N 2 O ambient. [ 6 ] These annealing conditions result in high concentrations of N at the SiC/SiO 2 interface which is thought to passivate the excess carbon. [ 117 ]…”

Section: Sic Nanoparticlesmentioning

confidence: 99%

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Fluorescent Silicon Carbide Nanoparticles

Vries

Sato

Ohshima

et al. 2021

Advanced Optical Materials

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Silicon carbide (SiC) is an indirect wide band gap semiconductor that is utilized in many industrial applications due to its extreme physical properties. SiC nanoparticles (NPs) exhibit a versatile surface chemistry, fluoresce from the ultraviolet to the near‐infrared spectral ranges, and their sizes can be tuned from one to hundreds of nanometers. Yet, fluorescent SiC NPs have received far less attention by the scientific community. This review summarizes the state‐of‐the‐art in fluorescent SiC NPs. Nanoparticle fabrication methods, characterization techniques, nanoparticle surface chemistry, and SiC NPs fluorescence properties are assessed in detail. Atomic defects and impurities in the SiC crystal lattice (so‐called color centers), surface‐induced fluorescence, quantum confinement, and band‐edge fluorescence are identified as the main sources of fluorescence in SiC NPs. While many color centers are reported in bulk SiC, only few are identified in SiC NPs and interface‐related defects remain poorly understood, creating enormous potential for scientific discovery. Finally, an overview of demonstrated and emerging potential applications of SiC NPs in the areas of bioimaging and quantum sensing is provided.

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Optically Active Defects at the SiC/SiO2 Interface

Cited by 22 publications

References 44 publications

Two-dimensional defect mapping of the SiO2/4H−SiC interface

Two-dimensional defect mapping of the SiO2/4H−SiC interface

Silicon carbide color centers for quantum applications

Fluorescent Silicon Carbide Nanoparticles

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