Unification of contemporary negative bias temperature instability models for p-MOSFET energy degradation

Exploration of Physicochemical Mechanism for Negative Bias Temperature Instability in GaN‐HEMTs by Extracting Activation Energy of Dislocations

“…While intensive efforts have been made to optimize it from the perspective of manufacturing process or selected materials, [ 45,51,52 ] insufficient attention has been devoted to fundamental understanding of the intrinsic mechanisms. Some studies [ 41–46 ] attributed the degradation to the charge and discharge process of defects at the interface of GaN buffer layer and dielectric layer, while others [ 47–50 ] considered the degradation cause is not only the interface defects but also possible defects in inner dielectric layer and buffer layer. The origin of their instability, either induced by dislocations, or pertaining to the thermodynamically unstable nature, are still obscure and remain unsolved.…”

“…While intensive efforts have been made to optimize it from the perspective of manufacturing process or selected materials, [45,51,52] insufficient attention has been devoted to fundamental understanding of the intrinsic mechanisms. Some studies [41][42][43][44][45][46] attributed the degradation to the charge and discharge process of defects at the interface of GaN buffer layer and dielectric layer, while others [47][48][49][50] considered the degradation cause is not only the interface…”

“…[37][38][39][40][41][42][43][44] NBTI-related issues in depletion-mode GaN-HEMTs with different kinds of dielectric layer have been investigated in a series of researches. [41,[45][46][47][48][49][50] The NBTI-induced reliability issues in GaN-HEMTs have been acknowledged as a major concern that contributes to the operational instability. While intensive efforts have been made to optimize it from the perspective of manufacturing process or selected materials, [45,51,52] insufficient attention has been devoted to fundamental understanding of the intrinsic mechanisms.…”

Nickel content effect on the microstructural, optical and electrical properties of p-type Mn3O4 sprayed thin films

“…p-type transition metal oxides have attracted much interests due to their involvement in various applications, such as: metal-oxide-semiconductor field-effect transistors (pMOSFETs) used in microelectronic devices, in electrochemical energy storage devices, catalytic activity, photovoltaic solar cells [1][2][3][4]. The conduction process of these oxides films is mainly determined by holes generated from metal ions vacancies, oxygen interstitial atoms, and used dopant [5].…”

Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET

“…The NBTI has been found to occur mostly in p-channel metaloxide semiconductor field-effect transistors (MOSFETs) operated at elevated temperatures (100 • C-250 • C) under negative gate oxide fields in the range 2 MV/cm-6 MV/cm. [1][2][3][4][5][6][7][8][9][10] From a relatively unknown problem in the past, NBTI has become an important reliability issue in metal-oxide semiconductor (MOS) technology primarily as a consequence of aggressive gate oxide scaling accompanied by less aggressive scaling of operating voltage. It is well known that this phenomenon is related to the stress-induced generation of oxide-trapped charge (N ot ) and interface traps (N it ).…”