Unification of asymmetric DG, symmetric DG and bulk undoped-body MOSFET drain current

Ortíz‐Conde, A.; Sánchez, F.J. Garcı́a

doi:10.1016/j.sse.2006.10.003

Cited by 21 publications

(10 citation statements)

References 12 publications

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“…Furthermore, we checked (not shown) that the model is also valid for the limiting case of the symmetric DGMOS-FET, in which case it becomes equivalent to the one presented in [16]. In fact, due to different boundary conditions, the symmetrical and asymmetrical models are often different [19]. In this work, the unification of both cases is ensured with the addition of the term 2bC si in the coupling charge (6).…”

Section: Resultsmentioning

confidence: 89%

A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation

Lime

Ritzenthaler

Ricoma

et al. 2011

Solid-State Electronics

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Section: Resultsmentioning

confidence: 89%

A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation

Lime

Ritzenthaler

Ricoma

et al. 2011

Solid-State Electronics

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“…In fact, the asymmetrical case converges to the symmetrical one. Indeed, due to different boundary conditions, the symmetrical and asymmetrical models are often different [9], but in this model, the unification of both cases is ensured with the addition of the term 2βC si to the coupling charge Eq. (20).…”

Section: Resultsmentioning

confidence: 99%

“…As in the symmetric case, C represents the electrostatic coupling between the two interfaces [9] but in that case we had Q cp =0. Furthermore it can be seen from Eq.…”

Section: Asymmetric Double Gate Mosfetmentioning

confidence: 99%

COMPACT MODELING OF DOUBLE AND TRI-GATE MOSFETs

Iñı́guez

Ritzenthaler

Lime

2014

Selected Topics in Electronics and Systems

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This chapter presents some insights into the modeling of different Multi-Gate SOI MOSFET structures, and in particular Double-Gate MOSFETs (DG MOSFETs) and Tri-Gate MOSFETs (TGFETs). For long-channel case an electrostatic model can be developed from the solution of the 1D Poisson's equation (in the case of DG MOSFETs) and the 2D Poisson's equation in the section perpendicular to the channel (in the case of TGFETs). Allowing it to be incorporated in quasi-2D compact models. For short-channel devices a model can be derived from a 2D (in the case of DG MOSFETs) or a 3D (in the case of TGFETs) electrostatic analysis. The models were successfully compared with 2D and 3D TCAD simulations and, in some cases, experimental measurements. Short-channel effects, such as subthrehold slope degradation, threshold voltage roll-off and DIBL were accurately reproduced.

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“…Due to the shift of the carrier concentration, the inversion layer thickness increases and the gate capacitance is degraded. The inversion layer thickness can be modeled as (29) This can be lumped into an effective increase of the gate oxide thickness.…”

Section: B Quantum Mechanical Effectsmentioning

confidence: 99%

A Review on Compact Modeling of Multiple-Gate MOSFETs

Song

et al. 2009

IEEE Trans. Circuits Syst. I

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This paper reviews recent development on compact modeling of multiple-gate (MG) MOSFETs. Long-channel core models based on the analytical potential solutions of Poisson and current continuity equations for symmetric double-gate (DG) and surrounding-gate (SG) MOSFETs have been developed first. Highly accurate explicit solutions are subsequently developed to deal with the implicit algebraic equations of the models. By adding quantum mechanical effects and short-channel effects, as well as capacitance formulations, the core model for DG MOSFETs has been expanded into a full-blown compact model which has been calibrated to and validated by experimental FinFET hardware. With regard to the various other types of MG MOSFETs developed, the core models for DG and SG MOSFETs have been generalized to the less symmetric structures, including quadruple-gate (QG), triple-gate (TG), 5-gate, and -gate MOSFETs. Other research activities on multiple-gate MOSFETs are briefly summarized at the end.

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Unification of asymmetric DG, symmetric DG and bulk undoped-body MOSFET drain current

Cited by 21 publications

References 12 publications

A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation

A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation

COMPACT MODELING OF DOUBLE AND TRI-GATE MOSFETs

A Review on Compact Modeling of Multiple-Gate MOSFETs

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