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This paper presents a detailed analysis of the multifrequency capacitance-voltage and conductance-voltage data of Al 2 O 3 /n-InGaAs MOS capacitors. It is shown that the widely varied frequency dependence of the data from depletion to inversion can be fitted to various regional equivalent circuits derived from the full interface-state model. In certain regions, incorporating bulk-oxide traps in the interface-state model enables better fitting of data. By calibrating the model with experimental data, the interface-state density and the trap time constants are extracted as functions of energy in the bandgap, from which the stretch-out of gate voltage is determined. It is concluded that the commonly observed decrease of the 1-kHz capacitance toward stronger inversion is due to the increasing time constant for traps to capture majority carriers at the inverted surface.Index Terms-Bulk-oxide trap, D it , III-V, interface trap, MOS.

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Articles you may be interested inRetraction: Electron mobility of 4,7-diphyenyl-1,10-phenanthroline estimated by using space-charge-limited currents [

The introduction of a periodic corrugation into TOLEDs is demonstrated to be effective in relieving the tradeoff between device stability and efficiency, through the cross coupling of the SPPs associated with the Ag cathode and the microcavity modes. The thickness of the Ag cathode for the corrugated TOLEDs was increased from 20 to 45 nm, and both the device lifetime and efficiency are significantly improved. The figure shows a schematic cross section of a red TOLED with periodic microstructure and an operating TOLED with both corrugated and planar area.

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