A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation

Lime, F.; Ritzenthaler, R.; Ricoma, M.; Mart́ınez, F.; Pascal, F.; Miranda, E.; Faynot, O.; Iñı́guez, Benjamı́n

doi:10.1016/j.sse.2010.11.034

Cited by 16 publications

(15 citation statements)

References 21 publications

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“…This flat potential profile corresponds to n=1 in Eq. (53). In the saturated region, ATLAS gives a potential profile that presents a very small curvature that can be fitted with a n value slightly inferior to 1, that depends on the device geometry.…”

Section: Resultsmentioning

confidence: 98%

“…for V G2 = 0 V). Additionally, compact models of Planar Single-gate FDSOI transistors must take into account the back-interface conduction (even tough the Planar Single-gate FDSOI transistors are called 'single-gate' transistors) to correctly reproduce the behaviour of the transistor, especially for the threshold voltage (like the approach presented in this chapter, section 2. and in [53]). …”

Section: Effect On the Interface Conductionsmentioning

confidence: 84%

“…This section will generalize the approach given for the symmetrical DG MOS to the case of the asymmetrical one, with independent gate operation [4]. Such a model can also be used for Ultra-Thin Body SOI MOSFETs (UTB SOI).…”

Section: Asymmetric Double Gate Mosfetmentioning

confidence: 99%

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COMPACT MODELING OF DOUBLE AND TRI-GATE MOSFETs

Iñı́guez

Ritzenthaler

Lime

2014

Selected Topics in Electronics and Systems

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This chapter presents some insights into the modeling of different Multi-Gate SOI MOSFET structures, and in particular Double-Gate MOSFETs (DG MOSFETs) and Tri-Gate MOSFETs (TGFETs). For long-channel case an electrostatic model can be developed from the solution of the 1D Poisson's equation (in the case of DG MOSFETs) and the 2D Poisson's equation in the section perpendicular to the channel (in the case of TGFETs). Allowing it to be incorporated in quasi-2D compact models. For short-channel devices a model can be derived from a 2D (in the case of DG MOSFETs) or a 3D (in the case of TGFETs) electrostatic analysis. The models were successfully compared with 2D and 3D TCAD simulations and, in some cases, experimental measurements. Short-channel effects, such as subthrehold slope degradation, threshold voltage roll-off and DIBL were accurately reproduced.

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Section: Resultsmentioning

confidence: 98%

Section: Effect On the Interface Conductionsmentioning

confidence: 84%

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COMPACT MODELING OF DOUBLE AND TRI-GATE MOSFETs

Iñı́guez

Ritzenthaler

Lime

2014

Selected Topics in Electronics and Systems

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“…The goal is to develop a core model using the same charge based formulation presented in [5] and [16] for the GAA MOS device presented in Fig. 1.…”

Section: Derivation Of the Modelmentioning

confidence: 99%

A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part I: DC Characteristics

Lime

Moldovan

Iñı́guez

2014

IEEE Trans. Electron Devices

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In this paper, we solved Poisson equation in cylindrical coordinates using approximations to obtain a compact model for the drain current of long-channel junctionless gate-all-around MOSFETs. The resulting model is analytical, explicit, and valid for depletion and accumulation, and consists of simple physically based equations, for better understanding of this device, and also easier implementation and better computation speed as a compact model. The agreement with TCAD simulations is very good.

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“…Several resolution procedures have been proposed in previous works. They either rely on a numerical resolution of the set of equations [8]- [14], on interpolation functions between the transistor operation regimes [15], [16] or on approximation of the potential profile in the thin body [17], [18]. In addition, all the rigorous solutions require an a priori calculation of the boundaries between hyperbolic and trigonometric modes [8]- [10], [12], [13], involving the use of hardly tractable Lambert functions [19].…”

Section: Introductionmentioning

confidence: 99%

Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part I: Interface Potentials Analytical Model

Poiroux

Rozeau

Scheer

et al. 2015

IEEE Trans. Electron Devices

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A detailed presentation of the latest version of the Leti-UTSOI compact model is provided. Leti-UTSOI2 is the first available model able to describe the behavior of low-doped ultrathin body and buried oxide fully depleted silicon-oninsulator transistors in all bias configurations, including strong forward back bias. In this part, a full analytical calculation of interface potentials, valid for all regimes of independent doublegate device operation, is detailed. This analytical computation, which is the heart of Leti-UTSOI2, provides explicit expressions for all quantities required to build dc and ac core models.Index Terms-Analytical models, compact modeling, fully depleted silicon-on-insulator (FDSOI), independent double-gate, semiconductor device modeling, SPICE, ultrathin body and buried oxide (BOX), ultrathin body BOX (UTBB).

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A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation

Cited by 16 publications

References 21 publications

COMPACT MODELING OF DOUBLE AND TRI-GATE MOSFETs

COMPACT MODELING OF DOUBLE AND TRI-GATE MOSFETs

A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part I: DC Characteristics

Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part I: Interface Potentials Analytical Model

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