Understanding the Role of Acid vs. Electron Blur in EUV Resist Materials

Thackeray, James W.; Wagner, Mike; Kang, Su Jun; Biafore, John J.

doi:10.2494/photopolymer.23.631

Cited by 16 publications

(15 citation statements)

References 6 publications

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“…In this regard, the clearing radius is an indication of the total resist blur. This interpretation agrees with previous theoretical and experimental studies which reported a SEB range of ≈ 2.5 nm 21,22 and an acid diffusion blur ≥ 5 nm 16,21,22 .…”

Section: Chemical Sensitivitysupporting

confidence: 93%

Dynamic absorption coefficients of CAR and non-CAR resists at EUV

Fallica

Stowers

Grenville

et al. 2016

Extreme Ultraviolet (EUV) Lithography VII

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The dynamic absorption coefficients of several CAR and non-CAR EUV photoresists are measured experimentally using a specifically developed setup in transmission mode at the XIL beamline of the Swiss Light Source. The absorption coefficient α and the Dill parameters ABC were measured with unprecedented accuracy. In general the α of resists match very closely with the theoretical value calculated from elemental densities and absorption coefficients, whereas exceptions are observed. In addition, through the direct measurements of the absorption coefficients and dose-to-clear values, we introduce a new figure of merit called Chemical Sensitivity to account for all the post-absorption chemical reaction ongoing in the resist, which is also predicts a quantitative clearing volume, and respectively clearing radius, due to the photon absorption in the resist. These parameters may help in deeper insight into the underlying mechanisms of EUV concept of clearing volume and clearing radius are then defined and quantitatively calculated.

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Section: Chemical Sensitivitysupporting

confidence: 93%

Dynamic absorption coefficients of CAR and non-CAR resists at EUV

Fallica

Stowers

Grenville

et al. 2016

Extreme Ultraviolet (EUV) Lithography VII

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show abstract

“…We designed efficient 1D and 2D grating masks by numerical simulations considering the feasible nanofabrication processes. 22 Therefore, we believe that achieving smaller features should be possible with this method owing to the sharp tip of the areal image profile. The resulting stationary triangular image profile offers great flexibility in tuning pattern linewidth and dot size, owing to the high contrast of the areal image at extreme duty cycles for both 1D and 2D periodic nanostructures.…”

Section: Discussionmentioning

confidence: 99%

High-resolution nanopatterning by achromatic spatial frequency multiplication with electroplated grating structures

Wang¹,

Terhalle²,

Hojeij³

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inFacile fabrication of high-resolution extreme ultraviolet interference lithography grating masks using footing strategy during electron beam writing J. Vac. Sci. Technol. B 31, 06F602 (2013); 10.1116/1.4822016 Talbot effect immersion lithography by self-imaging of very fine grating patterns J. Vac. Sci. Technol. B 30, 06FG02 (2012); 10.1116/1.4767440 Method of improving the quality of nanopatterning in atomic image projection electron-beam lithography Multiple beam sub-80 -nm lithography with miniature electron beam column arraysThe authors demonstrate generation of high-resolution nanostructures using achromatic spatial frequency multiplication in the extreme ultraviolet wavelength region. The technique based on the achromatic Talbot effect is used for periodic transmission gratings under wideband illumination, enabling one-and two-dimensional nanopatterns with sub-20 nm feature sizes. The transmission masks with desired properties are fabricated with electron-beam lithography followed by electroplating of gold. Features sizes down to 12 nm are obtained. The presented technique provides highthroughput and large-area nanopatterning with great flexibility in tuning pattern parameters such as linewidth and dot size.

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“…The effective blur of a CAR is primarily determined by acid diffusion and secondarily by the radius of gyration of the polymer, secondary electron scattering, and other mechanisms. 2,3 Total resist blur is typically 12 nm or greater, but it has recently been reduced to ~10 nm in polymer-bound PAG systems. 2,4 Photospeed improvements have focused on increased acid yield, although this gain can come at the expense of increased acid diffusion.…”

Section: Introductionmentioning

confidence: 99%

“…2,3 Total resist blur is typically 12 nm or greater, but it has recently been reduced to ~10 nm in polymer-bound PAG systems. 2,4 Photospeed improvements have focused on increased acid yield, although this gain can come at the expense of increased acid diffusion. Improvement in resolution requires a reduction in resist blur, while balancing the competing smoothing effect on LWR from blur.…”

Section: Introductionmentioning

confidence: 99%

Directly patterned inorganic hardmask for EUV lithography

et al. 2011

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This paper describes a metal oxide patternable hardmask designed for EUV lithography. The material has imaged 15-nm half-pitch by projection EUV exposure on the SEMATECH Berkeley MET, and 12-nm half-pitch by electron beam exposure. The platform is highly absorbing (16 µm -1 ) and etch resistant (>100:1 for silicon). These properties enable resist film thickness to be reduced to 20nm, thereby reducing aspect ratio and susceptibility to pattern collapse. New materials and processes show a path to improved photospeed. This paper also presents data for on coating uniformity, metal-impurity content, outgassing, pattern transfer, and resist strip.

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Understanding the Role of Acid vs. Electron Blur in EUV Resist Materials

Cited by 16 publications

References 6 publications

Dynamic absorption coefficients of CAR and non-CAR resists at EUV

Dynamic absorption coefficients of CAR and non-CAR resists at EUV

High-resolution nanopatterning by achromatic spatial frequency multiplication with electroplated grating structures

Directly patterned inorganic hardmask for EUV lithography

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