High-resolution nanopatterning by achromatic spatial frequency multiplication with electroplated grating structures

Abstract

Articles you may be interested inFacile fabrication of high-resolution extreme ultraviolet interference lithography grating masks using footing strategy during electron beam writing J. Vac. Sci. Technol. B 31, 06F602 (2013); 10.1116/1.4822016 Talbot effect immersion lithography by self-imaging of very fine grating patterns J. Vac. Sci. Technol. B 30, 06FG02 (2012); 10.1116/1.4767440 Method of improving the quality of nanopatterning in atomic image projection electron-beam lithography Multiple beam sub-80 -nm lithography with miniature electron beam column arraysThe authors demonstrate generation of high-resolution nanostructures using achromatic spatial frequency multiplication in the extreme ultraviolet wavelength region. The technique based on the achromatic Talbot effect is used for periodic transmission gratings under wideband illumination, enabling one-and two-dimensional nanopatterns with sub-20 nm feature sizes. The transmission masks with desired properties are fabricated with electron-beam lithography followed by electroplating of gold. Features sizes down to 12 nm are obtained. The presented technique provides highthroughput and large-area nanopatterning with great flexibility in tuning pattern parameters such as linewidth and dot size.

Patterning of nanodot-arrays using EUV achromatic Talbot lithography at the Swiss Light Source and Shanghai Synchrotron Radiation Facility

“…By increasing the exposure dose from 400 to 700 mJ/cm 2 the diameter of the dot array can be increased to 48 nm (Fig. 4b), in good agreement with simulations [10]. The exposure area was measured to be 32 μm (Fig.…”

“…The precision of the exposure area delimitation in the context of step-and-repeat exposures is limited by the precision of the sample stage. The minimum period of features patterned using ATL at PSI is 70 nm with 15 nm dot size [10], while the theoretical limit approaches 7.5 nm half-pitch using 10.9 nm EUV light [16].…”

“…Furthermore, the whole aerial image can be patterned, giving large-area patterning capabilities in comparison to multiple-beam interference lithography where only the interference patterns due to first or second order diffraction is recorded while the exposed areas due to zeroth order diffraction are not patterned. For a line/space diffraction grating, the resulting line/ space pattern has a pitch that is 1/2 of the mask grating period, while for a dot/hole diffraction grating, the resulting dot/hole array pattern has a pitch that is 1/√2 of the mask grating period rotated by 45° [10]. We note that for both dot and hole array diffraction gratings, a dot array is obtained using negative resist.…”

“…(3)). Beyond this distance, self-images of the grating smear and overlap in the z-direction and the aerial image becomes z-invariant beyond z A [10]:…”

High-throughput fabrication of compact and flexible bilayer nanowire grid polarizers for deep-ultraviolet to infrared range

“…This method is based on the Talbot effect with the use of a broadband light source of limited beam step size, in which the beam is scanned laterally over a large-area mask, enabling averaging of the beam profile over a large area through multiple exposures. With this method, homogeneous one-dimensional (1D) and 2D patterns with sub-50 nm half-pitch were obtained over large areas 11,13 and with a pattern demagnification factor of 2 relative to the patterns on the mask that is written by EBL. 13 Using this technique, Si master stamps were fabricated by EUV-IL exposure of resist using Au plated absorber patterns on Si 3 N 4 membrane masks and subsequent reactive ion etching (RIE) process at a high throughput [see Figs.…”