Circularly polarized light is incident on a nanostructured chiral meta‐surface. In the nanostructured unit cells whose chirality matches that of light, superchiral light is forming and strong optical second harmonic generation can be observed.

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All nanofabrication methods come with an intrinsic resolution limit, set by their governing physical principles and instrumentation. In the case of extreme ultraviolet (EUV) lithography at 13.5 nm wavelength, this limit is set by light diffraction and is ≈3.5 nm. In the semiconductor industry, the feasibility of reaching this limit is not only a key factor for the current developments in lithography technologies, but also is an important factor in deciding whether photon-based lithography will be used for future high-volume manufacturing. Using EUV-interference lithography we show patterning with 7 nm resolution in making dense periodic line-space structures with 14 nm periodicity. Achieving such a cutting-edge resolution has been possible by integrating a high-quality synchrotron beam, precise nanofabrication of masks, very stable exposures instrumentation, and utilizing effective photoresists. We have carried out exposure on silicon- and hafnium-based photoresists and we demonstrated the extraordinary capability of the latter resist to be used as a hard mask for pattern transfer into Si. Our results confirm the capability of EUV lithography in the reproducible fabrication of dense patterns with single-digit resolution. Moreover, it shows the capability of interference lithography, using transmission gratings, in evaluating the resolution limits of photoresists.

The fundamental aspects of electrochemistry at liquid-liquid interfaces are introduced to present the concept of molecular electrocatalysis. Here, a molecular catalyst is adsorbed at the interface to promote a proton coupled electron transfer reaction such as hydrogen evolution or oxygen reduction using lipophilic electron donors.

A soft stylus microelectrode probe has been developed to carry out scanning electrochemical microscopy (SECM) of rough, tilted, and large substrates in contact mode. It is fabricated by first ablating a microchannel in a polyethylene terephthalate thin film and filling it with a conductive carbon ink. After curing the carbon track and lamination with a polymer film, the V-shaped stylus was cut thereby forming a probe, with the cross section of the carbon track at the tip being exposed either by UVphotoablation machining or by blade cutting followed by polishing to produce a crescent moon-shaped carbon microelectrode. The probe properties have been assessed by cyclic voltammetry, approach curves, and line scans over electrochemically active and inactive substrates of different roughness. The influence of probe bending on contact mode imaging was then characterized using simple patterns. Boundary element method simulations were employed to rationalize the distance-dependent electrochemical response of the soft stylus probes.Scanning electrochemical microscopy (SECM) is a scanning probe technique that provides spatially resolved detection of electrochemical and chemical surface reactivity.1,2 Typically, the probe is an amperometric disk-shaped ultramicroelectrode (UME) enclosed in an insulating sheath, e.g. glass. Due to the hemispherical diffusion occurring at the microdisc electrode, a steadystate current can be monitored as a function of the horizontal (x, y) and vertical (z) probe positions. SECM has found many applications ranging from surface reactivity imaging 3-13 to the study of the kinetics of homogeneous and heterogeneous reactions at solid/liquid, gas/liquid, and liquid/liquid interfaces. 14-20 Because the response of a SECM probe can be described by continuum models of mass transport coupled to electrochemical kinetics, quantitative kinetic information can be extracted by comparing experimental and simulated curves in many practically relevant situations. 21-25The response of a SECM probe depends on the surface reactivity of the sample and the distance d between the surface and the active area of the probe electrode. In order to obtain a reactivity image that is not influenced by topography, d must be kept constant. In conventional SECM operations, this is achieved by working on samples with a roughness that is considerably smaller than the radius r T of the UME and by leveling the plane of the sample surface with respect to the x,y-scanning plane of the positioning system. However, this approach becomes inappropriate on rough surfaces of large aspect ratios or when large scan areas (in the mm 2 range) have to be investigated so that leveling becomes a major obstacle. Similar limitations apply when imaging curved samples. This drawback has been recognized for a long time. In the case of a small r T , a constant d can be maintained by combining