Understanding nonpolar GaN growth through kinetic Wulff plots

Sun, Qian; Yerino, Christopher D.; Ko, Tsung-Shine; Cho, Yong Suk; Lee, In Hwan; Han, Jung; Coltrin, Michael E.

doi:10.1063/1.3009969

Cited by 102 publications

(107 citation statements)

References 40 publications

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“…AIP Advances 6, 045209 (2016) results are consistent with the a-plane GaN grown on patterned r-plane sapphire substrates by Q Sun et al 31 Previous results revealed individual facets of a-GaN mesas, such as (0001) Ga-faces, {10-11} pyramidal facets, {10-10} m-planes, (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) a-planes and (000-1) N-faces observed using SEM images and kinetic Wulff plots.…”

Section: -7supporting

confidence: 78%

Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

et al. 2016

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Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalystfree metal-organic chemical vapor deposition In this study, self-assembled inclined (1-10-3)-oriented GaN nanorods (NRs) were grown on nanoimprinted (10-10) m-sapphire substrates using catalyst-free metalorganic chemical vapor deposition. According to X-ray phi-scans, the inclined GaN NRs were tilted at an angle of ∼57.5• to the [10-10] sapp direction. Specifically, the GaN NRs grew in a single inclined direction to the [11][12][13][14][15][16][17][18][19][20] sapp . Uni-directionally inclined NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN plane layer. It was confirmed that a thin layer of a-GaN was formed on r-facet nanogrooves of the m-sapphire substrate by nitridation. The interfacial a-GaN nucleation affected both the inclined angle and the growth direction of the inclined GaN NRs. Using X-ray diffraction and selective area electron diffraction, the epitaxial relationship between the inclined (1-10-3) GaN NRs and interfacial a-GaN layer on m-sapphire substrates was systematically investigated. Moreover, the inclined GaN NRs were observed to be mostly free of stacking faultrelated defects using high-resolution transmission electron microscopy. C 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

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Section: -7supporting

confidence: 78%

Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

et al. 2016

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“…On the NRs, increased surface roughness of the c-plane is observed, indicating a layer of unstrained indium rich growth. 31,32 On the macroscale, the different crystal planes are known to have different relative growth rates 30 determined by growth parameters 33,34 and potentially result in different InN mole fractions on the crystal planes, as shown by previous work. 4,17,29 However, it is unclear if the growth dynamics on rod-shaped nanostructures will be the same.…”

Section: Characterization Of Indium Gallium Nitride Layersmentioning

confidence: 98%

Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes

et al. 2016

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Abstract. Core-shell indium gallium nitride (InGaN)/gallium nitride (GaN) structures are attractive as light emitters due to the large nonpolar surface of rod-like cores with their longitudinal axis aligned along the c-direction. These facets do not suffer from the quantum-confined Stark effect that limits the thickness of quantum wells and efficiency in conventional light-emitting devices. Understanding InGaN growth on these submicron three-dimensional structures is important to optimize optoelectronic device performance. In this work, the influence of reactor parameters was determined and compared. GaN nanorods (NRs) with both f11-20g a-plane and f10-10g m-plane nonpolar facets were prepared to investigate the impact of metalorganic vapor phase epitaxy reactor parameters on the characteristics of a thick (38 to 85 nm) overgrown InGaN shell. The morphology and optical emission properties of the InGaN layers were investigated by scanning electron microscopy, transmission electron microscopy, and cathodoluminescence hyperspectral imaging. The study reveals that reactor pressure has an important impact on the InN mole fraction on the f10-10g m-plane facets, even at a reduced growth rate. The sample grown at 750°C and 100 mbar had an InN mole fraction of 25% on the f10-10g facets of the NRs. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…1(b) shows the interface between a window and wing region. In the window region, triangular shaped pits, which correspond to partial dislocations threading through the film 13 are observed. It appears that the size and distribution of the nanostructures is fairly similar across the window and wing regions, suggesting that the surface morphology of the underlaying a-plane GaN is not playing an important role in the nanostructure formation.…”

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confidence: 99%

“…Growth of InGaN QDs along non-and semi-polar orientations is thus of interest since the internal electric fields can be greatly reduced or eliminated 6,7 . Although there are a few reports on the growth of InGaN nanostructures on non-polar m-plane (1-100) by metal-organic vapor phase epitaxy (MOVPE) 8 and (11-22) semi-polar orientation by molecular beam epitaxy 9 , little progress has been reported on the growth of non-polar a-plane (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) InGaN QDs.…”

mentioning

confidence: 99%

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

Zhu

Oehler

Reid

et al. 2013

Applied Physics Letters

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We report on the optical characterization of non-polar a-plane InGaN quantum dots (QDs) grown by metal-organic vapor phase epitaxy using a short nitrogen anneal treatment at the growth temperature. Spatial and spectral mapping of sub-surface QDs have been achieved by cathodoluminescence at 8 K. Microphotoluminescence studies of the QDs reveal resolution limited sharp peaks with typical linewidth of 1 meV at 4.2 K. Time-resolved photoluminescence studies suggest the excitons in these QDs have a typical lifetime of 538 ps, much shorter than that of the c-plane QDs, which is strong evidence of the significant suppression of the internal electric fields.

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Understanding nonpolar GaN growth through kinetic Wulff plots

Cited by 102 publications

References 40 publications

Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

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