Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

Zhu, Tongtong; Oehler, Fabrice; Reid, Benjamin P. L.; Emery, Robert M.; Taylor, Robert A.; Kappers, Menno J.; Oliver, Rachel A.

doi:10.1063/1.4812345

Cited by 36 publications

(57 citation statements)

References 19 publications

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“…All calculations were performed on a 50 × 50 × 30-nm 3 supercell with periodic boundary conditions. With these assumptions, the calculated ground state transition energies were in the range of 2.7 to 2.9 eV, close to typical experimental values [27,32,33,[41][42][43][44] and those discussed below. Therefore, the chosen geometries and indium contents should give a reasonable description of the structures considered here.…”

Section: Theoretical Calculations Of Dolpmentioning

confidence: 53%

“…Previous studies on InGaN QD systems assumed lens-shaped geometries [39,40]. We followed this assumption, and based on earlier AFM results [33], chose a base diameter of 30 nm and a height of 2.5 nm as our starting point, with indium content varied between 15% and 25%. All calculations were performed on a 50 × 50 × 30-nm 3 supercell with periodic boundary conditions.…”

Section: Theoretical Calculations Of Dolpmentioning

confidence: 99%

“…The high mean | | ρ of 0.90 provides direct evidence that non-polar a-plane InGaN QDs are strongly polarized photon emitters. Furthermore, due to the modified droplet epitaxy growth routine [33], the a-plane QDs studied in this work were formed on top of fragmented QWs (fQWs). In the μ-PL experiments, we observe sharp emission features from the QDs together with the underlying fQW emission over the same spectral range, such as that in Figure 3.…”

Section: Experimental and Statistical Investigations Of Qd Emissionmentioning

confidence: 99%

“…The as-grown a-plane GaN template, utilizing the SiN x interlayer, has a dislocation density of 4 × 10 9 cm −2 and a basal plane stacking fault density of 2.6 × 10 5 cm −1 [31,32]. The InGaN QDs were grown using a modified droplet epitaxy method [33]. A 2.5 nm thick InGaN epilayer was grown at 695°C and 300 Torr, which was immediately annealed in N 2 atmosphere for 30 s at the growth temperature.…”

Section: Mocvd Growth Of the Qd Sample And Fabrication Of Nanopillarsmentioning

confidence: 99%

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Direct generation of linearly polarized single photons with a deterministic axis in quantum dots

et al. 2017

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Abstract:We report the direct generation of linearly polarized single photons with a deterministic polarization axis in self-assembled quantum dots (QDs), achieved by the use of non-polar InGaN without complex device geometry engineering. Here, we present a comprehensive investigation of the polarization properties of these QDs and their origin with statistically significant experimental data and rigorous k·p modeling. The experimental study of 180 individual QDs allows us to compute an average polarization degree of 0.90, with a standard deviation of only 0.08. When coupled with theoretical insights, we show that these QDs are highly insensitive to size differences, shape anisotropies, and material content variations. Furthermore, 91% of the studied QDs exhibit a polarization axis along the crystal [1-100] axis, with the other 9% polarized orthogonal to this direction. These features give non-polar InGaN QDs unique advantages in polarization control over other materials, such as conventional polar nitride, InAs, or CdSe QDs. Hence, the ability to generate single photons with polarization control makes non-polar InGaN QDs highly attractive for quantum cryptography protocols.

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Section: Theoretical Calculations Of Dolpmentioning

confidence: 53%

Section: Theoretical Calculations Of Dolpmentioning

confidence: 99%

Section: Experimental and Statistical Investigations Of Qd Emissionmentioning

confidence: 99%

Section: Mocvd Growth Of the Qd Sample And Fabrication Of Nanopillarsmentioning

confidence: 99%

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Direct generation of linearly polarized single photons with a deterministic axis in quantum dots

et al. 2017

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“…6 Theoretical work has suggested that growth in the non-polar orientations may eliminate the in-plane electric field. 7 Previous work by Zhu et al 8 has demonstrated the growth of non-polar a-plane InGaN QDs by the modified droplet epitaxy (MDE) method with exciton lifetimes an order of magnitude smaller than comparable polar QDs, 9 and which exhibit improved temperature stability 10 and Rabi oscillations. 11 However, the photoluminescence (PL) linewidth of the QDs grown by MDE remains typically in excess of 1 meV.…”

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confidence: 99%

Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

et al. 2014

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Non-polar (11-20) InGaN quantum dots (QDs) were grown by metal organic vapour phase epitaxy. An InGaN epilayer was grown and subjected to a temperature ramp in a nitrogen and ammonia environment before the growth of the GaN capping layer. Uncapped structures with and without the temperature ramp were grown for reference and imaged by atomic force microscopy. Micro-photoluminescence studies reveal the presence of resolution limited peaks with a linewidth of less than ∼500 μeV at 4.2 K. This linewidth is significantly narrower than that of non-polar InGaN quantum dots grown by alternate methods and may be indicative of reduced spectral diffusion. Time resolved photoluminescence studies reveal a mono-exponential exciton decay with a lifetime of 533 ps at 2.70 eV. The excitonic lifetime is more than an order of magnitude shorter than that for previously studied polar quantum dots and suggests the suppression of the internal electric field. Cathodoluminescence studies show the spatial distribution of the quantum dots and resolution limited spectral peaks at 18 K.

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Measurement of the Emission Lifetime of a GaN Interface Fluctuation Quantum Dot by Power Dependent Single Photon Dynamics

Kang

Holmes

Arita

et al. 2018

Physica Status Solidi (a)

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Photon autocorrelation measurements are used to investigate the power dependent single photon emission of recently reported interface fluctuation GaN quantum dots (QDs), which exhibit relatively narrow emission linewidths. The intrinsic exciton lifetime of such a dot is evaluated to be 2.0 ± 0.1 ns from its power dependent single photon dynamics. This result is comparable with typical SK GaN QDs that emit at similar energy, and provides further evidence that the relatively narrow emission linewidth in such structures results from a cleaner dot environment.

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Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

Cited by 36 publications

References 19 publications

Direct generation of linearly polarized single photons with a deterministic axis in quantum dots

Direct generation of linearly polarized single photons with a deterministic axis in quantum dots

Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

Measurement of the Emission Lifetime of a GaN Interface Fluctuation Quantum Dot by Power Dependent Single Photon Dynamics

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