Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

Griffiths, James T.; Zhu, Tongtong; Oehler, Fabrice; Emery, RM; Fu, Wai Yuen; Reid, Bpl; Taylor, Robert A.; Kappers, Menno J.; Humphreys, C. J.; Oliver, Rachel A.

doi:10.1063/1.4904068

Cited by 19 publications

(23 citation statements)

References 16 publications

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“…All calculations were performed on a 50 × 50 × 30-nm 3 supercell with periodic boundary conditions. With these assumptions, the calculated ground state transition energies were in the range of 2.7 to 2.9 eV, close to typical experimental values [27,32,33,[41][42][43][44] and those discussed below. Therefore, the chosen geometries and indium contents should give a reasonable description of the structures considered here.…”

Section: Theoretical Calculations Of Dolpmentioning

confidence: 54%

Direct generation of linearly polarized single photons with a deterministic axis in quantum dots

et al. 2017

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Abstract:We report the direct generation of linearly polarized single photons with a deterministic polarization axis in self-assembled quantum dots (QDs), achieved by the use of non-polar InGaN without complex device geometry engineering. Here, we present a comprehensive investigation of the polarization properties of these QDs and their origin with statistically significant experimental data and rigorous k·p modeling. The experimental study of 180 individual QDs allows us to compute an average polarization degree of 0.90, with a standard deviation of only 0.08. When coupled with theoretical insights, we show that these QDs are highly insensitive to size differences, shape anisotropies, and material content variations. Furthermore, 91% of the studied QDs exhibit a polarization axis along the crystal [1-100] axis, with the other 9% polarized orthogonal to this direction. These features give non-polar InGaN QDs unique advantages in polarization control over other materials, such as conventional polar nitride, InAs, or CdSe QDs. Hence, the ability to generate single photons with polarization control makes non-polar InGaN QDs highly attractive for quantum cryptography protocols.

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Section: Theoretical Calculations Of Dolpmentioning

confidence: 54%

Direct generation of linearly polarized single photons with a deterministic axis in quantum dots

et al. 2017

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“…The temperature is then ramped and maintained at 860 °C, during which another cap of 8 nm GaN is grown, a process designed to produce better material quality. The growth conditions are otherwise similar to the 2T growth routine we have previously published , but in that case no low temperature cap was used. It should be noted that the thin cap is unlikely to fully cover the larger three dimensional nanostructures present in this sample prior to temperature ramping, so as in our previous approach these will be subjected uncapped to an anneal.…”

Section: Methodsmentioning

confidence: 99%

“…To the best our knowledge, there have so far been only three reports of single photon generation at 200 K or higher in nitride systems with planar device structures , and of these only non‐polar (11–20) a ‐plane InGaN QDs also demonstrate deterministic polarisation properties at 220 K . The recent development of a ‐plane InGaN QDs have not only achieved significant reduction of the internal fields, faster radiative lifetimes , Rabi oscillation , single photon generation and polarised emission with a fixed polarisation axis , but also demonstrated most of these at temperatures beyond 200 K. As such, a ‐plane InGaN QDs are one of the strongest candidates to achieve the goals set forth in the beginning of this work.…”

Section: Introductionmentioning

confidence: 99%

“…In an attempt to further improve the properties of non‐polar InGaN QDs, we here compare two different growth routines: the modified droplet epitaxy (MDE) method and a new quasi‐two‐temperature (Q2T) method, adapted from an earlier two temperature (2T) method . We note that the latter provides a way to create non‐polar InGaN QDs lying on a relatively uniform quantum well (QW) layer, as opposed to the MDE method, in which disruption of the underlying quantum well (QW) layers is observed.…”

Section: Introductionmentioning

confidence: 99%

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High‐temperature performance of non‐polar (11–20) InGaN quantum dots grown by a quasi‐two‐temperature method

Wang

Puchtler

Zhu

et al. 2017

Physica Status Solidi (b)

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This is an open access article under the terms of the Creative Commons Attribution-NonCommercial License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes.Non-polar (11-20) a-plane InGaN quantum dots (QDs) are one of the strongest candidates to achieve on-chip applications of polarised single photon sources, which require a minimum operation temperature of $200 K under thermoelectrically cooled conditions. In order to further improve the material quality and optical properties of a-plane InGaN QDs, a quasi-two-temperature (Q2T) method has been developed, producing much smoother underlying InGaN quantum well than the previous modified droplet epitaxy (MDE) method. In this work, we compare the emission features of QDs grown by these two methods at temperatures up to 200 K. Both fabrications methods are shown to be able to produce QDs emitting around the thermoelectric cooling barrier. The sample fabricated by the new Q2T method demonstrates more stable operation, with an order of magnitude higher intensity at 200 K comparing to the comparable QDs grown by MDE. A detailed discussion of the possible mechanisms that result in this advantage of slower thermal quenching is presented. The use of this alternative fabrication method hence promises more reliable operation at temperatures even higher than the thermoelectric cooling threshold, and facilitates the on-going development of high temperature polarised single photon sources based on a-plane InGaN QDs. [7] are fundamentally interesting, however, these systems offer limited potential for real-world applications in solid-state platforms. Quantum dots (QDs), on the other hand, can be fabricated using standard epitaxial growth techniques and integrated in a semiconductor system, and are thus in the vanguard of single photon research. A number of arsenidebased QD systems have achieved high purity, brightness, and indistinguishability [8][9][10][11][12][13][14][15], but are limited to operations

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“…In addition, polar GaN with wurzite crystal structure experiences a quantum-confined stark effect (QCSE) along c-axis, which is induced by a large spontaneous polarization field 5 . This leads to a large spatial separation between electron and hole wavefunctions, resulting in a loss of internal quantum efficiency 6,14 . QCSE also causes a long exciton lifetime increasing the time-jitter on the emission from a single photon source and large spectral diffusion, thus deteriorating the performance of the polar GaN-based nanostructure devices 15 .…”

mentioning

confidence: 99%

Highly Efficient Excitonic Recombination of Non-polar ($$11\overline{2}0$$) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy

Lee

Baik

et al. 2020

Sci Rep

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While non-polar nanostructured-GaN crystals are considered as a prospective material for the realization of futuristic opto-electronic application, the formation of non-polar GaN nanocrystals (NCs) with highly efficient visible emission characteristics remain unquestionable up to now. Here, we report the oxygen-incorporated a-plane GaN NCs with highly visible illumination excitonic recombination characteristics. Epitaxially aligned a-plane NCs with average diameter of 100 nm were formed on r-plane sapphire substrates by hydride vapor phase epitaxy (HVPE), accompanied by the oxygen supply during the growth. X-ray photoemission spectroscopy measurements proved that the NCs exhibited Ga-O bonding in the materials, suggesting the formation of oxidized states in the bandgap. It was found that the NCs emitted the visible luminescence wavelength of 400-500 nm and 680-720 nm, which is attributed to the transition from oxygen-induced localized states. Furthermore, time-resolved photoluminescence studies revealed the significant suppression of the quantum confined Stark effect and highly efficient excitonic recombination within GaN NCs. Therefore, we believe that the HVPE nonpolar GaN NCs can guide the simple and efficient way toward the nitride-based next-generation nanophotonic devices.

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Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

Cited by 19 publications

References 16 publications

Direct generation of linearly polarized single photons with a deterministic axis in quantum dots

Direct generation of linearly polarized single photons with a deterministic axis in quantum dots

High‐temperature performance of non‐polar (11–20) InGaN quantum dots grown by a quasi‐two‐temperature method

Highly Efficient Excitonic Recombination of Non-polar ($$11\overline{2}0$$) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy

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