Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs

Maji, D.; Crupi, Felice; Amat, E.; Simoen, Eddy; Jaeger, B. De; Brunco, D.P.; Manoj, C.R.; Rao, V. Ramgopal; Magnone, Paolo; Giusi, G.; Pace, Calogero; Pantisano, L.; Mitard, J.; Rodrı́guez, R.; Nafría, M.

doi:10.1109/ted.2009.2015854

Cited by 23 publications

(6 citation statements)

References 16 publications

(25 reference statements)

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“…Good obtained for Si-capped Ge MOSFETs [4], and their NBTI was found to be better than Si counterparts [2], [5]. Electron trapping, however, needs investigation.…”

Section: Introductionmentioning

confidence: 95%

“…The reported Ge MOSFETs capped by a few Si monolayers generally have much shorter channel length and thinner dielectrics than those without them [1]- [3]. The process for fabricating Si-capped Ge MOSFETs is becoming sufficiently mature to warrant research into their reliability, and some encouraging results have been reported [4], [5].…”

Section: Introductionmentioning

confidence: 99%

“…pMOSFETs in an inverter also suffer from a nonuniform PBTI when the input is "high" [12]. It was reported that the impact ionization in Si-capped Ge MOSFETs is two orders of magnitude higher than that in their Si counterparts [5].…”

Section: Introductionmentioning

confidence: 99%

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Characterization of Electron Traps in Si-Capped Ge MOSFETs With $\hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack

Benbakhti

Zhang

et al. 2012

IEEE Electron Device Lett.

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Si-capped Ge MOSFETs have good compatibility with existing processes, and promising results have been reported. The process is becoming sufficiently mature to warrant assessment of device reliability. Good time-dependent dielectric breakdown performance has been observed, and negative-biastemperature-instability susceptibility is better than Si counterparts. Electron trapping is shown to be problematic and affects devices through positive bias temperature instability and hot carrier injection. This letter characterizes electron trapping in HfO 2 /SiO 2 stacks on Si-capped Ge. Trapping is substantial, increasing with V G and reaching ∼10 13 cm −2 in 100 μs under V G = 2.0 V. We report, for the first time, two distinctive capture cross sections (CCS) by measuring the transient gate current. The large CCS can be ∼10 −12 cm 2 and reduces for a higher oxide field, which is a signature of coulombic attractive centers. The small CCS is on the order of 10 −14 cm 2 , which is a typical value found for electron traps in SiO 2 and HfO 2 /SiO 2 stacks on Si.Index Terms-Electron traps, Ge MOSFETs, HfO 2 , hot carriers, negative bias temperature instability (NBTI), negative charges, positive bias temperature instability (PBTI), reliability, Si capping.

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“…Good obtained for Si-capped Ge MOSFETs [4], and their NBTI was found to be better than Si counterparts [2], [5]. Electron trapping, however, needs investigation.…”

Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Characterization of Electron Traps in Si-Capped Ge MOSFETs With $\hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack

Benbakhti

Zhang

et al. 2012

IEEE Electron Device Lett.

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“…IMEC做了Ge pMOSFET的TDDB特性研究, 发现和Si器件差别不大 [51] . IMEC和印度理工学院对Ge pMOSFET的HCI做了初步研究, 由于Ge带隙较窄, Ge pMOSFET中碰撞电离效应几乎是Si器件的两倍, 导致 HCI效应恶化 [52] . 加州大学伯克利分校的Hu教授 [3] 提出绿色晶体管的概念, 他指出TFET可以在超低工作电压下实现比 MOSFET更低的能耗.…”

Section: Gesn沟道nmosfetunclassified

Non-Silicon microelectronics: Germanium and Germanium-Tin field-effect transistors

Han

Zhang

et al. 2016

Sci. Sin.-Phys. Mech. Astron.

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The background and motivation of the non-silicon microelectronics, in which the non-silicon channel materials are used to realize the CMOS integrated circuits, are introduced in this paper. As the typical non-silicon microeletronic devices, Germanium (Ge) and Germanium-Tin (GeSn) metal-oxide-semiconductor field-effect transistor (MOSFET) and tunneling field-effect transistor (TFET) are reviewed. Ge and GeSn are the promising candidate materials for the realization of high mobility channel CMOS devices owing to their high carrier mobilities and easy integration on Si platform. GeSn can transit from indirect to direct bandgap material by tunning Sn composition thus achieving the high band-to-band tunneling generation rate. Theory and experimental results proved that GeSn can be used to fabricate the high performance TFETs. A series of key problems including the growth of materials, surface passivation, gate-stack layer, source-drain engineering, strain engineering, and device reliability are discussed.Germanium, Germanium-Tin, field-effect transistor (FET), mobility, band-to-band tunneling

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“…Several studies [16][17][18][19][20] the BTI reliability in Ge MOSFETs. The devices with HfO 2 /SiO 2 gate stack show less than the Si counterparts [16][17][18][19] because t trapping in the dielectric of the Ge device due t band offset. The PBTI degradation of the G severe than the Si counterparts [16].…”

Section: Introductionmentioning

confidence: 99%

Impacts of NBTI and PBTI on ultra-thin-body GeOI 6T SRAM cells

Fan

et al. 2015

2015 IEEE International Symposium on Circuits and Systems (ISCAS)

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This paper investigates the impact Positive Bias Temperature Instabilities (NBTI stability and performance of Ultra-Thin-Body SRAM cells compared with the SOI counter stress scenarios for Read and Write operati For UTB GeOI SRAM cells, PBTI dominates in RSNM, HSNM, cell Read access time, an while for UTB SOI SRAM cells, NBT degradations in RSNM, HSNM, and Timeonly slightly degrades due to NBTI/PBTI. T design and Word-Line Under-Drive (WL techniques are analyzed to compensate the sta due to NBTI/PBTI for UTB GeOI SRAM cell the nominal UTB GeOI SRAM cells with low GeOI SRAM cells with high Vth design suffe degradations and exhibit significant improvem HSNM, and comparable performance com nominal UTB SOI SRAM cells.

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Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs

Cited by 23 publications

References 16 publications

Characterization of Electron Traps in Si-Capped Ge MOSFETs With $\hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack

Characterization of Electron Traps in Si-Capped Ge MOSFETs With $\hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack

Non-Silicon microelectronics: Germanium and Germanium-Tin field-effect transistors

Impacts of NBTI and PBTI on ultra-thin-body GeOI 6T SRAM cells

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