A MoO3-gated diamond metal–oxide–semiconductor field effect transistor (MOSFET) with a gate length of 40 µm was characterized. Analysis of the flat band voltage shift from the capacitance–voltage hysteresis shows quite high density of the fixed charge presents in the MoO3 layer (1.67 × 1012 cm−2), but the density of the traps brought by MoO3 layer is fairly low (1.35 × 1011 cm−2). The gate voltage dependence of the effective hole mobility was extracted and fitted by the empirical relation widely used in the silicon MOS channel. The resulting low-field mobility without vertical field degradation and the mobility degradation factor are 699 cm2/(V·s) and 1.13, respectively.
The background and motivation of the non-silicon microelectronics, in which the non-silicon channel materials are used to realize the CMOS integrated circuits, are introduced in this paper. As the typical non-silicon microeletronic devices, Germanium (Ge) and Germanium-Tin (GeSn) metal-oxide-semiconductor field-effect transistor (MOSFET) and tunneling field-effect transistor (TFET) are reviewed. Ge and GeSn are the promising candidate materials for the realization of high mobility channel CMOS devices owing to their high carrier mobilities and easy integration on Si platform. GeSn can transit from indirect to direct bandgap material by tunning Sn composition thus achieving the high band-to-band tunneling generation rate. Theory and experimental results proved that GeSn can be used to fabricate the high performance TFETs. A series of key problems including the growth of materials, surface passivation, gate-stack layer, source-drain engineering, strain engineering, and device reliability are discussed.Germanium, Germanium-Tin, field-effect transistor (FET), mobility, band-to-band tunneling
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.