Ultraviolet Emission from a Diamond pn Junction

Hall effect measurements have been carried out to determine the carrier density and mobilities in ultrananocrystalline diamond films grown with added nitrogen. The results show clear n-type conductivity with very low thermal activation energy. Mobility values of 1.5cm2V−1s−1 are found for a sheet carrier concentration of 2×1017cm−2. These measurements indicate that ultrananocrystalline films grown with high nitrogen levels in the growth gas mixture can have bulk carrier concentrations of up to 1021, which is very high for diamond films. The n-type nature of this material was also confirmed by Seebeck effect measurements.

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“…However, p-n junctions have been demonstrated utilizing the boron-phosphorus interface. 7 A shallow donor species is still sought for diamond.…”

mentioning

confidence: 99%

n -type conductivity in ultrananocrystalline diamond films

Williams

Curat

Gerbi

et al. 2004

Applied Physics Letters

154

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“…Again, this level is too deep for conventional room temperature applications. The possibility of n-and p-type diamond doping opens the door for a generation of bipolar devices, such as a diamond pn junction reported by Koizumi et al [89].…”

Section: Diamond Dopingmentioning

confidence: 99%

Diamond growth by chemical vapour deposition

Grácio¹,

Fan²,

Madaleno³

2010

J. Phys. D: Appl. Phys.

243

155

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This paper reviews the growth of diamond by chemical vapour deposition (CVD). It includes the following seven parts: (1) Properties of diamond: this part briefly introduces the unique properties of diamond and their origin and lists some of the most common diamond applications. (2) Growth of diamond by CVD: this part reviews the history and the methods of growing CVD diamond. (3) Mechanisms of CVD diamond growth: this part discusses the current understanding on the growth of metastable diamond from the vapour phase. (4) Characterization of CVD diamond: we discuss the two most common techniques, Raman and XRD, which have been intensively employed for characterizing CVD diamond. (5) CVD diamond growth characteristics: this part demonstrates the characteristics of diamond nucleation and growth on various types of substrate materials. (6) Nanocrystalline diamond: in this section, we present an introduction to the growth mechanisms of nanocrystalline diamond and discuss their Raman features. This paper provides necessary information for those who are starting to work in the field of CVD diamond, as well as for those who need a relatively complete picture of the growth of CVD diamond.

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“…The difference between the four different structures can be found in Table 1. Based on experience and SIMS measurements carried out on similar samples, a growth rate of 0.5 µmh -1 was estimated for the 2 nd deposition run, corresponding to intrinsic layer thicknesses of 1, 0.5 and 0.25 µm respectively for Set 1 to 3 [1,8] To create 18 mesa structured p(i)n-diodes per substrate, each 250 µm in diameter (see abstract picture), reactive ion etching (RIE) is used in combination with Al masks. This procedure, of which a detailed description can be found in ref.…”

Section: Methodsmentioning

confidence: 99%

“…All deposition processes were carried out at a pressure of 100 Torr, with the substrate temperature during B-doping being between 900 and 950 °C, while P-doped layers were grown between 870 and 900 °C. All the p(i)nstructures were deposited in two growth runs, using two two different ULVAC stainless steel chamber microwave plasma enhanced deposition reactors [1,8]. The difference between the four different structures can be found in Table 1.…”

Section: Methodsmentioning

confidence: 99%

“…Since the first report by on the formation of homoepitaxial CVD diamond pn-junctions based on boron and phosphorus doped diamond, a lot of progress has been obtained in optimising such structures on both the main crystallographic facets, {111} and {001} [1][2][3]. In fields like space weather, the use of diamond is envisaged for UV detection due to its so-called solar blindness.…”

Section: Introductionmentioning

confidence: 99%

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Rectifying properties and photoresponse of CVD diamond p(i)n‐junctions

Haenen

Lazea

Nesládek

et al. 2009

Physica Rapid Research Ltrs

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The current-voltage characteristics and photoresponse of mesa structured {111}-oriented homoepitaxial CVD diamond pin-junctions with different intrinsic layer thickness are investigated. When a sufficient thick intrinsic layer is present, a rectification ratio of 10 8 at ± 10 V could be obtained. Good rectifying diodes show a high photoresponse ratio between 210 nm (above bandgap) and 500 nm (below bandgap), making them suitable for UV detection purposes. The results are compared with similar measurements carried out on polycrystalline CVD diamond pn-junctions.18 Diamond pin mesa structures (250 µm in diameter) based on a boron-doped/intrinsic/P-doped CVD layer stack deposited on a 2 x 2 x 0.5 mm³{111} Ib HPHT diamond substrate.

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Ultraviolet Emission from a Diamond pn Junction

Cited by 491 publications

References 12 publications

n -type conductivity in ultrananocrystalline diamond films

n -type conductivity in ultrananocrystalline diamond films

Diamond growth by chemical vapour deposition

Rectifying properties and photoresponse of CVD diamond p(i)n‐junctions

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