Evidence is presented for the formation of a weak ground‐state charge‐transfer complex in the blend films of poly[9,9‐dioctylfluorene‐co‐N‐(4‐methoxyphenyl)diphenylamine] polymer (TFMO) and [6,6]‐phenyl‐C61 butyric acid methyl ester (PCBM), using photothermal deflection spectroscopy (PDS) and photoluminescence (PL) spectroscopy. Comparison of this polymer blend with other polyfluorene polymer/PCBM blends shows that the appearance of this ground‐state charge‐transfer complex is correlated to the ionization potential of the polymer, but not to the optical gap of the polymer or the surface morphology of the blend film. Moreover, the polymer/PCBM blend films in which this charge‐transfer complex is observed also exhibit efficient photocurrent generation in photovoltaic devices, suggesting that the charge‐transfer complex may be involved in charge separation. Possible mechanisms for this charge‐transfer state formation are discussed as well as the significance of this finding to the understanding and optimization of polymer blend solar cells.

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We report on the electronic and optical properties of boron-doped nanocrystalline diamond (NCD) thin films grown on quartz substrates by CH 4 /H 2 plasma chemical vapor deposition.Diamond thin films with a thickness below 350 nm and with boron concentration ranging from 10 17 cm -3 to 10 21 cm -3 have been investigated. UV Raman spectroscopy and AFM have been used to assess the quality and morphology of the diamond films. Hall effect measurements confirmed the expected p-type conductivity. At room temperature, the conductivity varies from 1.5x10 -8 Ω -1 cm -1 for a non-intentionally doped film up to 76 Ω -1 cm -1 for a heavily B-doped film. Increasing the doping level results in a higher carrier concentration while the mobility decreases from 1.8 cm 2 V -1 s -1 down to 0.2 cm 2 V -1 s -1 . For NCD films with low boron concentration, the conductivity strongly depends on temperature. However, the conductivity and the carrier concentration are no longer temperature-dependent for films with the highest boron doping, and the NCD films exhibit metallic properties. Highly doped films show superconducting properties with critical temperatures up to 2K. The critical boron concentration for the metal-insulator transition is in the range from 2x10 20 cm -3 up to 3x10 20 cm -3 . We discuss different transport mechanisms to explain the influence of the grain boundaries and boron doping on the electronic properties of NCD films. Valence band transport dominates at low boron concentration and high temperatures, 2 whereas hopping between boron acceptors is the dominant transport mechanism for boron doping concentration close to the Mott transition. Grain boundaries strongly reduce the mobility for low and very high doping levels. However, at intermediate doping levels where hopping transport is important, grain boundaries have a less pronounced effect on the mobility. The influence of boron and the effect of grain boundaries on the optoelectronic properties of the NCD films are examined using spectrally resolved photocurrent measurements and photothermal deflection spectroscopy. Major differences occur in the low energy range, between 0.5 -1.0 eV, where both Boron impurities and the sp 2 carbon phase in the grain boundaries govern the optical absorption.

This letter reports on highly sensitive optical absorption measurements on organic donor-acceptor solar cells, using Fourier-transform photocurrent spectroscopy ͑FTPS͒. The spectra cover an unprecedented dynamic range of eight to nine orders of magnitude making it possible to detect defect and disorder related sub-band gap transitions. Direct measurements on fully encapsulated solar cells with an active layer of poly͓2-methoxy-5-͑3Ј ,7Ј -dimethyl-octyloxy͔͒-p-phenylene-vinylene:͑6,6͒-phenyl-C61-butyric-acid ͑1:4 weight ratio͒ enabled a study of the intrinsic defect generation due to UV illumination. Solar cell temperature annealing effects in poly͑3-hexylthiophene͒:PCBM ͑1:2 weight ratio͒ cells and the induced morphological changes are related to the changes in the absorption spectrum, as determined with FTPS.

In searching for alternative oxygen evolution reaction (OER) catalysts for acidic water splitting, fast screening of the material intrinsic activity and stability in half-cell tests is of vital importance. The screening process significantly accelerates the discovery of new promising materials without the need of time-consuming real-cell analysis. In commonly employed tests, a conclusion on the catalyst stability is drawn solely on the basis of electrochemical data, for example, by evaluating potential-versus-time profiles. Herein important limitations of such approaches, which are related to the degradation of the backing electrode material, are demonstrated. State-of-the-art Ir-black powder is investigated for OER activity and for dissolution as a function of the backing electrode material. Even at very short time intervals materials like glassy carbon passivate, increasing the contact resistance and concealing the degradation phenomena of the electrocatalyst itself. Alternative backing electrodes like gold and boron-doped diamond show better stability and are thus recommended for short accelerated aging investigations. Moreover, parallel quantification of dissolution products in the electrolyte is shown to be of great importance for comparing OER catalyst feasibility.

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