Rectifying properties and photoresponse of CVD diamond p(i)n‐junctions

Haenen, Ken; Lazea, Andrada; Nesládek, Miloš; Koizumi, Satoshi

doi:10.1002/pssr.200903155

Cited by 9 publications

(4 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Diamond is a unique material well known for its outstanding properties which make it the material of choice for high‐end applications such as cutting of hard materials, radiation detection, electroanalysis, bio‐sensing, high‐power high‐frequency switching, and quantum computing 1–6. For many of these applications the semiconducting properties of diamond are of utmost importance.…”

Section: Introductionmentioning

confidence: 99%

In situ boron doping during heteroepitaxial growth of diamond on Ir/YSZ/Si

Sartori

Fischer

Gsell

et al. 2012

Physica Status Solidi (a)

View full text Add to dashboard Cite

In situ boron doping of heteroepitaxial diamond films grown by microwave plasma chemical vapor deposition on Ir/YSZ/Si (001) is investigated. The study comprises the analysis of the gas phase by optical emission spectroscopy (OES) and measurements of B doped films by secondary ion mass spectroscopy (SIMS), cathodoluminescence (CL), and X-ray diffraction (XRD). The OE intensity of BH species scales linearly with the concentration of the boron precursor trimethylboron (TMB) in the feed gas. Addition of CO 2 as an oxygen source causes a proportional reduction of the BH signal. At a ratio C:O ¼ 1, a reduction factor of $50 is obtained. It is shown for two diamond samples that the boron incorporation drops nearly identical to the BH emission intensity. We conclude that the influence of oxygen on boron incorporation is a pure gas phase effect. In contrast, CN and BH emission indicate a negligible interaction between N 2 and TMB added to the feed gas. At the same time, preliminary growth rate measurements show that the boron background pressure in the chamber after growth with TMB completely cancels the growth acceleration by nitrogen up to N 2 concentrations of 100 ppm which points to the dominance of surface processes. Heteroepitaxial diamond films grown on Ir at 50 mbar between 720 and 900 8C contain high intrinsic stress that varies from À2.2 GPa compressive at the lowest to slightly tensile at the highest deposition temperature. The observed behavior is similar to former work at 200 mbar in which effective climb of dislocations was suggested as responsible mechanism. Addition of boron rather enhances the stress formation than causing a relaxation. The B concentration in the heteroepitaxial films is deduced by SIMS, CL, and XRD and correlated with the TMB concentration in the gas phase.

show abstract

Section: Introductionmentioning

confidence: 99%

In situ boron doping during heteroepitaxial growth of diamond on Ir/YSZ/Si

Sartori

Fischer

Gsell

et al. 2012

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…The rectification ratios of the diode samples fabricated in this study at AE10 V at room temperature were found to be between 4:4 Â 10 3 -5:2 Â 10 6 . Although, rectification ratios as high as $10 8 {10 10 have recently been reported in diamond devices at comparable bias voltages, 31,32) those results were obtained from doped and highly doped diamond devices. In contrast, the rectification ratio of 10 6 observed here is comparable to the best results previously reported by others on intrinsic films.…”

Section: Fabrication Of the Mcd/ncd Devices And Their Current-voltage...mentioning

confidence: 87%

Microwave Plasma Source for Fabrication of Micro- and Nano-Crystalline Diamond Thin Films for Electronic Devices

Paosawatyanyong

Rujisamphan

Bhanthumnavin

2013

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We show that QCD observables defined as infrared-and collinear-safe, according to the usual Sterman-Weinberg criteria, can nevertheless be infinite at accessible points inside phase space, to any finite order of perturbation theory. Infrared finiteness is restored after resummation of divergent terms to all orders. The resulting characteristic structure, which we call a Sudakov shoulder, represents an interesting new class of QCD predictions.

show abstract

“…In addition, due to the large exciton binding energy (80 meV), a diamond diode can realize high-intensity, free-exciton emission (wavelength of about 235 nm) at room temperature, which has a greater potential in the deep ultraviolet and the extreme UV deep-ultraviolet detectors [ 5 ]. Compared with the unipolar Schottky barrier diodes (SBDs) [ 6 ], the bipolar p-n diodes (PNDs) are attractive due to their capability of handling higher currents and high voltages at the same time [ 7 , 8 , 9 , 10 , 11 ]. In addition, they present lower on-resistance ( R on ) and less static power loss in high-voltage applications thanks to the conductivity modulation effect [ 12 ].…”

Section: Introductionmentioning

confidence: 99%

Vertical Diamond p-n Junction Diode with Step Edge Termination Structure Designed by Simulation

Cai,

Mu,

et al. 2023

Micromachines

View full text Add to dashboard Cite

In this paper, diamond-based vertical p-n junction diodes with step edge termination are investigated using a Silvaco simulation (Version 5.0.10.R). Compared with the conventional p-n junction diode without termination, the step edge termination shows weak influences on the forward characteristics and helps to suppress the electric field crowding. However, the breakdown voltage of the diode with simple step edge termination is still lower than that of the ideal parallel-plane one. To further enhance the breakdown voltage, we combine a p-n junction-based junction termination extension on the step edge termination. After optimizing the structure parameters of the device, the depletion regions formed by the junction termination extension overlap with that of the p-n junction on the top mesa, resulting in a more uniform electric field distribution and higher device performance.

show abstract

Rectifying properties and photoresponse of CVD diamond p(i)n‐junctions

Cited by 9 publications

References 13 publications

In situ boron doping during heteroepitaxial growth of diamond on Ir/YSZ/Si

In situ boron doping during heteroepitaxial growth of diamond on Ir/YSZ/Si

Microwave Plasma Source for Fabrication of Micro- and Nano-Crystalline Diamond Thin Films for Electronic Devices

Vertical Diamond p-n Junction Diode with Step Edge Termination Structure Designed by Simulation

Contact Info

Product

Resources

About