Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire

Zhang, Xutao; Huang, Hai; Yao, Xiaomei; Li, Ziyuan; Zhou, Chen; Zhang, Xu; Chen, Pingping; Fu, Lan; Zhou, Xueqing; Wang, Jianlu; Hu, Weida; Lü, Wei; Zou, Jin; Tan, Hark Hoe; Jagadish, Chennupati

doi:10.1021/acsnano.8b09649

Cited by 53 publications

(51 citation statements)

References 39 publications

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“…Low‐dimensional semiconductor nanostructures demonstrate significant potential for application in the field of infrared (IR) photodetection, owing to their large surface‐to‐volume ratio, unique electron‐limiting effects, and tunable light absorption. [ 1–4 ] When incorporated into devices, these IR detectors exhibit excellent optoelectronic performance with high responsivity, fast response, good flexibility, and low energy consumption. [ 5–10 ] With this in mind, various low‐dimensional nanostructures, especially nanowires (NWs) and two‐dimensional (2D) materials, have been extensively investigated in the past few years.…”

Section: Figurementioning

confidence: 99%

An Integrated Flexible All‐Nanowire Infrared Sensing System with Record Photosensitivity

et al. 2020

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investigated in the past few years. [11][12][13][14][15][16] For example, Hu and co-workers fabricated IR detectors based on parallel GaSb NW arrays that exhibited a photosensitivity of 4.5 with rise and decay times of 195.1 and 380.4 µs, respectively. [13] Many of IR detectors have been recently built on various 2D semiconducting nanostructures with varying photosensitivities, response speeds, etc. However, the performance of such devices, especially in terms of photosensitivity, is still quite low and cannot meet practical requirements. [17][18][19] To enhance the photosensitivity and enable the performance to reach a suitable level for commercial IR detector and imaging systems, [20] external amplification circuits are often utilized to improve the processing efficiency and image recognition rate. [21,22] However, the complex circuits of such IR systems, including IR detectors, external amplifiers, and processing units, introduce challenges with respect to power consumption, device integration, and noise processing. Therefore, new and highly compacted integrated IR systems with on-chip amplifying units are highly desirable for large-scale implementation and fault-tolerant processing in IR imaging.In this work, a simple and highly integrated IR detection amplification (IRDA) system was designed for high-performance IR imaging applications. A Ga-doped In 2 O 3 NW-based field effect transistor (FET) was integrated into a flexible all-NW IRDA system, and was found to enhance the photosensitivity of the system by several orders of magnitude. The resulting system exhibited a high photosensitivity, external quantum efficiency (EQE), and detectivity under 1342 nm light irradiation, with values as high as 7.6 × 10 4 , 1508%, 4.9 × 10 12 Jones, respectively. Furthermore, the contrast imaging of 1342 nm IR light in a 10 × 10 device array was significantly improved by integrating the IRDA system. As a proof-of-concept, the IRDA system array is used here to increase the accuracy and processing efficiency of subsequent image recognition by artificial neural network (ANN) training. These results suggest that an all-NW based IRDA system has significant potential for application in future flexible IR imaging technologies.Visual perception is an important part of human perception, providing an essential bridge between human beings and external information. [23] To simulate and expand the functionality of human vision, it is critical to obtain clear image information. Generally, the human retina detects visual Infrared (IR) photodetectors are a key optoelectronic device and have thus attracted considerable research attention in recent years. Photosensitivity is an increasingly important device performance parameter for nanoscale photodetectors and image sensors, as it determines the ultimate imaging quality and contrast. However, photosensitivities of state-of-the-art lowdimensional nanostructure-based IR detectors are considerably low, limiting their practical applications. Herein, a biomimetic IR detection amplification (IRDA)...

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Section: Figurementioning

confidence: 99%

An Integrated Flexible All‐Nanowire Infrared Sensing System with Record Photosensitivity

et al. 2020

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“…Very high photoconductive gain of 4.2 × 10 5 , responsivity of 2.8 × 10 5 A/W, and specific detectivity of 9.1 × 10 15 Jones at λ = 0.83 µm were measured [35]. More recently, Zhang et al developed a P(VDF-TrFE)-coated InAs nanowire photodetector that exhibited an ultrasensitive photoresponse in a wide spectral range extending to MWIR [81,82]. The electrostatic field of the polarized ferroelectric material was capable of modifying the surface electron-hole distribution and the InAs nanowire band structure, resulting in a photoresponse at a MWIR wavelength of 4.3 µm (well below the InAs band gap) and a responsivity of 9.6 × 10 3 A/W and detectivity of ∼8.5 × 10 10 Jones (cm•Hz 1/2 W −1 ) at 77 K [82].…”

Section: Phototransistorsmentioning

confidence: 99%

Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

Allen

et al. 2020

Materials

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Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), and device performance, as well as their challenges and future perspectives.

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“…Among them, a typical design is the metal-semiconductor-metal (MSM) photodetector, which is realized by two back-to-back Schottky junctions. Recently, a new type of NW photodetector has been demonstrated to enhance the response through the ferroelectric field [37]. These detectors have extremely high responsivity due to the low dark current.…”

Section: Introductionmentioning

confidence: 99%

Negative Photoconductive Effects in Uncooled InAs Nanowire Photodetectors

Zhang

Pan

et al. 2021

Front. Phys.

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One-dimensional, direct, and narrow band gap indium arsenide (InAs) nanowires (NWs) have been emerging with great potentials for the next-generation wide-spectrum photodetectors. In this study, metal–semiconductor–metal (MSM) structure InAs NW-based photodetectors were fabricated by transferring MBE-grown NWs onto a sapphire substrate via a mechanical stamping method. These NW detectors exhibit strong negative photoconductive (NPC) effects, which are likely caused by the carrier dynamics in the “core-shell” structure of the NWs. Specifically, under the irradiation of a 405 nm violet laser, the maximum Idark/Ilight ratio reaches ∼102 and the NPC gain reaches 105 at a low bias voltage of 0.2 V. At room temperature, the rise and decay times of InAs NW devices are 0.005 and 2.645 s, respectively. These InAs NW devices with a high Idark/Ilight ratio and NPC gain can be potentially used in the field of vis/near-IR light communication in the future.

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Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire

Cited by 53 publications

References 39 publications

An Integrated Flexible All‐Nanowire Infrared Sensing System with Record Photosensitivity

An Integrated Flexible All‐Nanowire Infrared Sensing System with Record Photosensitivity

Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

Negative Photoconductive Effects in Uncooled InAs Nanowire Photodetectors

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