Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

Li, Ziyuan; Allen, Jeffery; Allen, Monica; Tan, Hark Hoe; Jagadish, Chennupati; Fu, Lan

doi:10.3390/ma13061400

Cited by 53 publications

(43 citation statements)

References 107 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These new multilayered stacking architectures combined with advanced fabrication and growth techniques (e.g., molecular beam epitaxy and chemical vapor deposition), can significantly enhance the output of the III-nitride based UV sensors. [300][301][302][303] Examples of this approach include the work of Martens et al, which developed an Al 0.25 Ga 0.75 N/GaN-based UV photodetectors. The high conductivity of the 2D gas at the Al 0.25 Ga 0.75 N/GaN interfaces offers a high photocurrent in the milliampere-range and high gain optical switch.…”

Section: Ultraviolet Sensorsmentioning

confidence: 99%

Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring

et al. 2020

View full text Add to dashboard Cite

Semiconductor nanowires are widely considered as the building blocks that revolutionized many areas of nanosciences and nanotechnologies. The unique features in nanowires, including high electron transport, excellent mechanical robustness, large surface area, and capability to engineer their intrinsic properties, enable new classes of nanoelectromechanical systems (NEMS). Wide bandgap (WBG) semiconductors in the form of nanowires are a hot spot of research owing to the tremendous possibilities in NEMS, particularly for environmental monitoring and energy harvesting. This article presents a comprehensive overview of the recent progress on the growth, properties and applications of silicon carbide (SiC), group III‐nitrides, and diamond nanowires as the materials of choice for NEMS. It begins with a snapshot on material developments and fabrication technologies, covering both bottom‐up and top‐down approaches. A discussion on the mechanical, electrical, optical, and thermal properties is provided detailing the fundamental physics of WBG nanowires along with their potential for NEMS. A series of sensing and electronic devices particularly for environmental monitoring is reviewed, which further extend the capability in industrial applications. The article concludes with the merits and shortcomings of environmental monitoring applications based on these classes of nanowires, providing a roadmap for future development in this fast‐emerging research field.

show abstract

Section: Ultraviolet Sensorsmentioning

confidence: 99%

Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring

et al. 2020

View full text Add to dashboard Cite

show abstract

“…Therefore, the specific detectivity of the array detectors can be estimated using the Johnson noise and shot noise-limited detectivity: ,,, where A d is the NW array area, k is Boltzmann constant, T is the temperature, and R d is the dynamic resistance which is defined as . The peak detectivity of the array with D NW tip of 81, 108, and 128 nm at 1 V is 3.8 × 10 11 , 1.2 × 10 12 , and 5.8 × 10 11 cm √Hz/W, respectively, much higher than previously reported GaAsSb NW photodetectors , and most previously reported NW array photodetectors. , Moreover, compared with previously demonstrated Si NW array-based multispectral detectors, , our GaAsSb NW detectors show not only high performance but also a much broader spectral band extending to the IR region with more than 10 channels to enhance color-matching functions. By further optimizing the NW growth as well as the substrate preparation to increase the gold disk size, such as increasing the hole size, SiO 2 thickness, and/or Au thickness, large diameter NWs with increased Sb composition can be obtained to further extend the NW array spectral response to longer wavelength.…”

mentioning

confidence: 93%

Broadband GaAsSb Nanowire Array Photodetectors for Filter-Free Multispectral Imaging

Trendafilov

Zhang

et al. 2021

Nano Lett.

Self Cite

View full text Add to dashboard Cite

Highly compact, filter-free multispectral photodetectors have important applications in biological imaging, face recognition, and remote sensing. In this work, we demonstrate room-temperature wavelength-selective multipixel photodetectors based on GaAs 0.94 Sb 0.06 nanowire arrays grown by metalorganic vapor phase epitaxy, providing more than 10 light detection channels covering both visible and near-infrared ranges without using any optical filters. The nanowire array geometry-related tunable spectral photoresponse has been demonstrated both theoretically and experimentally and shown to be originated from the strong and tunable resonance modes that are supported in the GaAsSb array nanowires. High responsivity and detectivity (up to 44.9 A/W and 1.2 × 10 12 cm √Hz/W at 1 V, respectively) were obtained from the array photodetectors, enabling highresolution RGB color imaging by applying such a nanowire array based single pixel imager. The results indicate that our filter-free wavelength-selective GaAsSb nanowire array photodetectors are promising candidates for the development of future high-quality multispectral imagers.

show abstract

“…[1][2][3][4] The current state-of-the-art commercial infrared photodetectors (mainly at 1310 and 1550 nm) are based primarily on some non-silicon materials with narrow bandgaps such as Ge (0.7-1.8 μm), InGaAs (1.1-1.7 μm), and InAs(0.9-3.5 μm). [5,6] However, these non-silicon-based photodetectors have a high cost and in particular, are incompatible with the silicon-based complementary metal-oxide-semiconductor (CMOS) process, making them prohibitively expensive to produce and limiting their use in silicon-based optoelectronic integration. Silicon is the most cost-effective semiconductor material, however, due to its bandgap (1.12 eV) constraint, it has no photon response to infrared light with a wavelength greater than 1100 nm.…”

Section: Introductionmentioning

confidence: 99%

Hyperdoped Crystalline Silicon for Infrared Photodetectors by Pulsed Laser Melting: A Review

Yang

2022

Physica Status Solidi (a)

View full text Add to dashboard Cite

Infrared photodetectors based on crystalline silicon have attracted much attention due to their low cost and good compatibility with complementary metal–oxide–semiconductor (CMOS) technology in ultra‐largescale integrated circuits (ULSI). However, silicon shows no response to infrared light with a wavelength of over 1100 nm corresponding to its bandgap of 1.12 eV. Pulsed laser melting and rapid solidification are effective ways to hyperdope high concentrations of deep‐level impurities into silicon, and therefore form an impurity band within the bandgap, allowing broad‐band infrared light to be absorbed. Herein, a review of the fundamentals and research progress of hyperdoped silicon and related infrared photodetectors during the past few decades is given. The fundamentals of hyperdoped silicon, including the hyperdoping mechanism and infrared light absorption or response, are first discussed. Then, the fabrication methodologies and properties of hyperdoped silicon with various elementals (chalcogens and transition metals) are illustrated, among which the corresponding photodetectors’ properties are stressed. Earlier research on chalcogen hyperdoping paves the path for silicon to be used for infrared photodetectors and later research on transition metals hyperdoping provides a new opportunity for further improvements of device properties. Finally, a summary and future research direction of hyperdoped silicon are outlined.

show abstract

Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

Cited by 53 publications

References 107 publications

Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring

Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring

Broadband GaAsSb Nanowire Array Photodetectors for Filter-Free Multispectral Imaging

Hyperdoped Crystalline Silicon for Infrared Photodetectors by Pulsed Laser Melting: A Review

Contact Info

Product

Resources

About