Hyperdoped Crystalline Silicon for Infrared Photodetectors by Pulsed Laser Melting: A Review

Fu, Jiawei; Yang, Deren; Yu, Xuegong

doi:10.1002/pssa.202100772

Cited by 7 publications

(8 citation statements)

References 107 publications

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“…[ 28 ] Notably, in our previous study, it has been shown that Si:Zn photodetector with conventional annealing at 700 °C for 30 min as post‐treatment exhibits a responsivity of 0.68 mAW −1 at 1550 nm, −1 V bias, which is not so satisfactory. [ 8 ] Therefore, exploring a more efficient annealing process may be an effective approach to enhance the performance of Si:Zn photodetectors. RTA is a method of annealing that involves direct irradiation of the sample surface by a radiation source, rapidly heating the sample to the target temperature within a very short period of time.…”

Section: Resultsmentioning

confidence: 99%

The Mechanism Behind the Annealing‐Induced Reduction of Infrared Absorption in Zinc‐Hyperdoped Silicon

Hu,

Fu,

Cheng

et al. 2024

Physica Status Solidi (a)

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Pulsed laser hyperdoping is widely investigated as an effective method for expanding the infrared absorption of silicon. Prior to further device fabrication, thermal treatment is commonly applied to hyperdoped silicon to repair lattice defects and activate dopants. However, it is observed that thermal treatment adversely affects the infrared absorption of hyperdoped silicon, and the underlying mechanisms remain incompletely understood. Herein, zinc‐hyperdoped silicon (Si:Zn) is prepared using vacuum magnetron sputtering combined with femtosecond laser pulses, and the mechanisms of the reduction in infrared absorption during conventional annealing of Si:Zn samples are investigated. The diffusion of zinc and its precipitation as zinc clusters in silicon are observed during the annealing process, leading to a decrease in the concentration of zinc dopants within the silicon lattice and consequent attenuation of infrared absorption. Building upon this understanding, the approach of short timescale annealing subjected to infrared rapid thermal annealing furnace is proposed to be employed as a method to mitigate the adverse effects of zinc transitional precipitation, resulting in enhancement of the performance of Si:Zn optoelectronic devices.

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Section: Resultsmentioning

confidence: 99%

The Mechanism Behind the Annealing‐Induced Reduction of Infrared Absorption in Zinc‐Hyperdoped Silicon

Hu,

Fu,

Cheng

et al. 2024

Physica Status Solidi (a)

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“…In general, either planar or roughsurfaced hyperdoped materials can be achieved and the process is referred to as optical hyperdoping [10,56,57]. The dopant incorporation dynamics and light-trapping properties are reviewed in [58], and we highlight several important concepts in order to compare this doping technique to others.…”

Section: Thin-film or Gas Phase Dopant Precursormentioning

confidence: 99%

“…Several photodetectors have been developed using this approach [10,53,75,78,138], and reviewed in [58,139]. In general, these devices showed EQE higher than 100% for above bandgap light, indicating a photoconductive gain is taking place.…”

Section: Devices With Different Hyperdoping Techniquesmentioning

confidence: 99%

Hyperdoped silicon materials: from basic materials properties to sub-bandgap infrared photodetectors

Sher¹,

García-Hemme²

2023

Semicond. Sci. Technol.

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Hyperdoping silicon, which introduces deep-level dopants into Si at concentrations near one atomic percent, drastically changes its optoelectronic properties. We review recent progress in the fundamental understanding of the material properties and state of the art sub-bandgap infrared photodetectors. Different hyperdoping techniques are reviewed and compared, namely ion implantation followed by pulsed laser melting or other fast annealing methods and pulsed laser melting of Si with a dopant precursor. We review data available in the literature for material properties related to the success of optoelectronic devices such as the charge carrier lifetime, mobility, and sub-bandgap light absorption of hyperdoped Si with different dopants. To maximize carrier generation and collection efficiency in a sub-bandgap photodetector, charge carrier lifetimes must be long enough to be transported through the hyperdoped layer, which should be on the order of light absorption depth. Lastly, the charge transport properties and photodetector responsivities of hyperdoped Si based photodiodes at room temperature and at cryogenic temperatures are compared. The charge carrier transport mechanisms at different temperature ranges and in different dopant systems are discussed. At room temperature, despite different dopant energetics and hyperdoped thicknesses, light detection exhibits similar spectral responsivities with a common cutoff around 0.5 eV, and at low temperatures, it extends further into the infrared range. The roles of the dopant energetics and process-induced defects are discussed. We highlight future material development directions for enhancing device performance.

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“…However, the high manufacturing costs of compound semiconductor infrared detectors limit their integration with silicon-based chips. Therefore, infrared photodetectors based on crystalline silicon have gained attention due to their low cost and compatibility with complementary metal oxide semiconductor (CMOS) technology in ultra-large-scale integrated circuits (ULSI) [5,6]. Unfortunately, the bandgap of silicon at 1.12 eV limits its absorption of infrared light above 1100 nm [7,8], which has motivated the development of processes compatible with the silicon-based semiconductor industry to expand silicon's infrared light absorption [9].…”

Section: Introductionmentioning

confidence: 99%

Direct growth of graphene on hyper-doped silicon to enhance carrier transport for infrared photodetection

Yu,

Cong,

Khan

et al. 2023

Nanotechnology

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The importance of infrared photodetectors cannot be overstated, especially in fields such as security, communication, and military. While silicon-based infrared photodetectors are widely used due to the maturity of the semiconductor industry, their band gap of 1.12 eV limits their infrared light absorption above 1100 nm, making them less effective. To overcome this limitation, we report a novel infrared photodetector prepared by growing graphene on the surface of zinc hyper-doped silicon. This technique utilizes hyper-doping to introduce deep level assisted infrared light absorption benefit from the enhanced carrier collection capacity of graphene. Without introducing new energy consumption, the hyper-doped substrate annealing treatment is completed during the growth of graphene. By the improvement of transport and collection of charge carriers, the graphene growth adjusts the band structure to upgrade electrode contact, resulting in a response of 1.6 mA W−1 under laser irradiation with a wavelength of 1550 nm and a power of 2 mW. In comparison, the response of the photodetector without graphene was only 0.51 mA W−1, indicating a three-fold performance improvement. Additionally, the device has lower dark current and lower noise current, resulting in a noise equivalent power of 7.6 × 10–8 W Hz−0.5. Thus, the combination of transition metal hyper-doping and graphene growth technology has enormous potential for developing the next generation of infrared photodetectors.

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Hyperdoped Crystalline Silicon for Infrared Photodetectors by Pulsed Laser Melting: A Review

Cited by 7 publications

References 107 publications

The Mechanism Behind the Annealing‐Induced Reduction of Infrared Absorption in Zinc‐Hyperdoped Silicon

The Mechanism Behind the Annealing‐Induced Reduction of Infrared Absorption in Zinc‐Hyperdoped Silicon

Hyperdoped silicon materials: from basic materials properties to sub-bandgap infrared photodetectors

Direct growth of graphene on hyper-doped silicon to enhance carrier transport for infrared photodetection

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