Ultralow internal optical loss in separate-confinement quantum-well laser heterostructures

Slipchenko, S. O.; Vinokurov, D. A.; Pikhtin, N. A.; Sokolova, Z. N.; Stankevich, A. L.; Tarasov, I. S.; Alfërov, Zh. I.

doi:10.1134/1.1836066

Cited by 69 publications

(18 citation statements)

References 17 publications

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“…The composition of the waveguide solid solution is chosen taking into account the necessity of suppression of charge delocalisation from the active region into the waveguiding layers [11,12]. The waveguide width is increased to decrease the internal optical loss, the beam divergence, and the optical power density at the output mirror of the laser [13,14]. The composition of the laser heterostructure emitters was calculated so that the optical confinement factor was minimal in the emitter layers and maximal in the active region [13,14].…”

Section: Experimental Samples and Main Methodsmentioning

confidence: 99%

Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime

Veselov¹,

Kapitonov²,

Pikhtin³

et al. 2014

Quantum Electron.

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Semiconductor lasers based on MOVPE-grown asymmetric separate-confinement heterostructures with a broadened waveguide and emitting in the wavelength range 1.0 -1.1 mm are studied. It is found that the intensity of spontaneous emission from the active region increases with increasing pump current above the lasing threshold and that this is caused by a growth in the concentration of charge carriers in the active region due to the modal gain enhancement needed to compensate for the growing internal optical loss at high pulsed pump currents. It is shown that the increase in the internal optical loss with increasing pulsed pump current is one of the main reasons for saturation of the light -current characteristics of high-power semiconductor lasers.

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Section: Experimental Samples and Main Methodsmentioning

confidence: 99%

Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime

Veselov¹,

Kapitonov²,

Pikhtin³

et al. 2014

Quantum Electron.

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“…large period was made possible by advanced laser structures with unprecedentally low internal optical loss (less than 1 cm -1 ) [7]. First, we calculated the frequency dependences of the reflectance in heterostructures with DGs of vari ous types: rectangular, triangular, and trapezoidal ones.…”

Section: Physics Of Semiconductor Devicesmentioning

confidence: 99%

High-order diffraction gratings for high-power semiconductor lasers

et al. 2012

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“…To promote high-performance lasing in the lasers with thick vertical waveguides the active region needs typically to be placed close to the center of the optical cavity to allow significant optical overlap with the fundamental mode. A moderately asymmetric [7,8] positioning of the active region off-center in the cavity may improve the vertical mode discrimination also in the waveguides with a high refractive index step by suppressing lasing of the high order optical modes. Optical losses < 0.4 cm −1 were reported for thick undoped waveguide laser diodes with vertical beam divergence 30 o FWHM [9].…”

Section: Introductionmentioning

confidence: 98%

High differential efficiency tilted wave laser

et al. 2014

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We report results on 1060 nm GaAs/GaAlAs-based Tilted Wave Lasers employing multiple InGaAs quantum wells without strain compensation as active medium. The devices are edge-emitting lasers composed of a thin active waveguide optically coupled to a thick passive waveguide responsible to form a tilted optical wave that results in two narrow lobes in the vertical far field profile of the emitted laser light. Devices with different thicknesses of the passive waveguide have been fabricated. The laser with the 26 µm-thick waveguide has low internal losses of 1.4 cm -1 , reaches for the as cleaved facets device with 1.5 mm-long cavity the differential efficiency of 81%. The 50 µm broad area device demonstrates the maximum wall-plug efficiency in the continuous wave (cw) mode ~50% and the linear output power up to and above 4 W. The laser light is concentrated in two narrow vertical beams, each 2 o full width at half maximum in a good agreement with theory.

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Ultralow internal optical loss in separate-confinement quantum-well laser heterostructures

Cited by 69 publications

References 17 publications

Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime

Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime

High-order diffraction gratings for high-power semiconductor lasers

High differential efficiency tilted wave laser

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