High-order diffraction gratings for high-power semiconductor lasers

Vasil’eva, V. V.; Vinokurov, D. A.; Zolotarev, V. V.; Leshko, A. Yu.; Petrunov, A. N.; Pikhtin, N. A.; Rastegaeva, M. G.; Sokolova, Z. N.; Shashkin, I. S.; Tarasov, I. S.

doi:10.1134/s1063782612020236

Cited by 8 publications

(2 citation statements)

References 5 publications

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“…Furthermore, the combination of process steps required for these fine-featured, deep etched structures, with the fabrication required for other process steps increases fabrication complexity considerably if the performance of all components is to be maintained. While first-order gratings require e-beam lithography for most wavelengths of interest for integrated photonics, higher order gratings (N > 10) have been suggested for standalone lasers [10][11][12]. DBR periods above approximately 2 µm can be achieved using photolithography, which is already multiple order gratings for an operating wavelength, λ ∼ = 1.3 µm.…”

Section: Introductionmentioning

confidence: 99%

Design and characterisation of multi-mode interference reflector lasers for integrated photonics

Albeladi

Gillgrass

Nabialek

et al. 2023

J. Phys. D: Appl. Phys.

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InAs quantum dot (QD) ridge waveguide (RWG) lasers comprising single-port multi-mode-interference-reflectors (MMIR) and single-cleaved reflectors are designed, fabricated, and characterized, to demonstrate capability for optoelectronic-integrated circuits. Simulations of an MMI- R show high values of fundamental mode reflectivity (> 80%) and good selectivity against higher-order modes. Deep-etched MMIR lasers fabricated with 0.5 mm long cavities have a threshold current of 24 mA, compared to 75 mA for standard cleaved-cleaved RWG lasers of the same length, both at 25 oC, and 56 mA compared to 102 mA at 55 oC. MMIR lasers exhibit stable ground state operation up to 50oC and show promise as small footprint sources for integrated photonics.

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Section: Introductionmentioning

confidence: 99%

Design and characterisation of multi-mode interference reflector lasers for integrated photonics

Albeladi

Gillgrass

Nabialek

et al. 2023

J. Phys. D: Appl. Phys.

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“…The fabrication of first-order DBR (with a period of Λ≈0.15 nm) is associated with a complicated and expensive technology of electron beam lithography, which in the case of high power semiconductor lasers can be redundant. In order to search for more technological approaches to stabilization and narrowing of the laser spectrum, the issue of developing high-order DBR lasers (N10) is significant [11][12][13][14][15][16]. The high-order DBR period exceeds Λ>1.5 μm for a wavelength of λ∼1 μm, which allows someone to use photolithography, which is much cheaper and make it possible to fabricate a DBR over a large area (for example, a heterostructure with a diameter of 3 inches or more) without increasing time and process cost.…”

Section: Introductionmentioning

confidence: 99%

Continuous wave and pulse (2–100 ns) high power AlGaAs/GaAs laser diodes (1050 nm) based on high and low reflective 13th order DBR

Zolotarev

Leshko

Shamakhov

et al. 2019

Semicond. Sci. Technol.

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The paper presents the experimental results of a study of higfh-power laser diodes with a surface distributed Bragg reflector of 13-th and 16-th diffraction order emitting at a wavelength of 1026 nm and 1050 nm in a continuous and pulsed pump mode. The effect of the high-order DBR groove shape on the diffraction efficiency of high diffraction orders-parasitic output optical losses-has been experimentally studied. It is shown that the design of a laser resonator with a low reflective output short DBR can significantly reduce the parasitic losses and increase the laser efficiency while maintaining spectrally selective features over the entire range of pump currents. It was shown that pulse pumping (2-100 ns) does not impair the spectral selectivity of the high-order DBR and ensures a laser line width of 0.3 nm even in the range of high pump levels (50 A/1 00 ns). Investigations of a pulsed 2 ns time-resolved laser pump demonstrated that there is no influence of the electrically passive absorbing section of the DBR on the shape of the optical pulse.

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Experimental studies of 1.5 – 1.6 μm high-power single-frequency semiconductor lasers

et al. 2020

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High-power semiconductor laser systems based on 1.5 – 1.6 μm single-frequency distributed feedback (DFB) lasers with a sidewall Bragg diffraction grating are developed and their current – voltage, light – current, and spectral characteristics are experimentally studied. The characteristics of conventional lasers with a Fabry – Perot cavity and DFB lasers fabricated from one and the same heterostructure are compared. At a pump current not exceeding 700 mA, a conventional laser with a cavity length of 1.6 mm and a mesa-stripe width of 3 μm emits a power no lower than 200 mW versus 150 mW of the DFB laser; both lasers are mounted in a housing 11 mm in diameter. The DFB laser mounted in a butterfly housing emits a power no lower than 100 mW at the exit of the single-mode cable at a pump current not exceeding 500 mA, which, at a 60 % coupling efficiency, corresponds to a power no lower than 165 mW; the side-mode suppression ratio in this case is no lower than 53 dB. It is shown that the wavelength deviation with changing pump current and temperature is almost an order of magnitude lower for the DFB laser than for the conventional laser.

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High-order diffraction gratings for high-power semiconductor lasers

Cited by 8 publications

References 5 publications

Design and characterisation of multi-mode interference reflector lasers for integrated photonics

Design and characterisation of multi-mode interference reflector lasers for integrated photonics

Continuous wave and pulse (2–100 ns) high power AlGaAs/GaAs laser diodes (1050 nm) based on high and low reflective 13th order DBR

Experimental studies of 1.5 – 1.6 μm high-power single-frequency semiconductor lasers

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