Continuous wave and pulse (2–100 ns) high power AlGaAs/GaAs laser diodes (1050 nm) based on high and low reflective 13th order DBR

Abstract

The paper presents the experimental results of a study of higfh-power laser diodes with a surface distributed Bragg reflector of 13-th and 16-th diffraction order emitting at a wavelength of 1026 nm and 1050 nm in a continuous and pulsed pump mode. The effect of the high-order DBR groove shape on the diffraction efficiency of high diffraction orders-parasitic output optical losses-has been experimentally studied. It is shown that the design of a laser resonator with a low reflective output short DBR can significantly reduce the parasitic losses and increase the laser efficiency while maintaining spectrally selective features over the entire range of pump currents. It was shown that pulse pumping (2-100 ns) does not impair the spectral selectivity of the high-order DBR and ensures a laser line width of 0.3 nm even in the range of high pump levels (50 A/1 00 ns). Investigations of a pulsed 2 ns time-resolved laser pump demonstrated that there is no influence of the electrically passive absorbing section of the DBR on the shape of the optical pulse.

975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings

“…The high-order DBR structures have been extensively researched in recent years. In 2015, Zolotarev et al conducted a theoretical study of high-order diffractive Bragg gratings using coupled-mode theory and pointed out that the interference radiation modes (IRM) brought about by the high-order diffraction affect the cavity modes propagating within the waveguide, thus affecting the performance of the lasers [11] . In 2019, Zolotarev et al fabricated semiconductor lasers with 13th and 16th order surface DBR, achieving an out-put power of 3 W in the CW mode and a spectral width of full width at halfmaximum (FWHM) of less than 0.3 nm at a stripe width of 100 μm and a cavity length of 3 mm [12] .…”

Design and characterisation of multi-mode interference reflector lasers for integrated photonics

“…An increase of the DBR period gives rise to high diffraction orders emitting outside the plane of the heterostructure waveguide, increasing parasitic optical output losses [13]. Consequently, increasing DBR period adds a loss penalty on the laser performance, whereby the threshold current is increased and the laser efficiency reduced, when compared with Fabry-Perot lasers of the same cavity length [14]. Loopmirrors can be highly reflective but require a relatively large footprint on chip, on the scale of ≈mm, ∼ = mm in addition to the fabrication requirement of low side-wall roughness to minimise the bend loss [15,16].…”

Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition

“…In particular, SE provides a uniform active-region (AR) composition over the entire structure surface. In this case, wavelength control is feasible, for example, through the use of various types of photonic crystals [3][4][5][6][7][8], including conventional Bragg gratings; however, the source efficiency and the tuning range will still be limited by the AR composition and thickness, which do not change in the case of SE [9]. This is primarily due to the photonic-crystal-operating-wavelength shift from the maximum of the material gain spectrum.…”