Abstract:We report results on 1060 nm GaAs/GaAlAs-based Tilted Wave Lasers employing multiple InGaAs quantum wells without strain compensation as active medium. The devices are edge-emitting lasers composed of a thin active waveguide optically coupled to a thick passive waveguide responsible to form a tilted optical wave that results in two narrow lobes in the vertical far field profile of the emitted laser light. Devices with different thicknesses of the passive waveguide have been fabricated. The laser with the 26 µm… Show more
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