Ultrafast Sinter Bonding Between Cu Finishes Under Moderate Compression Using In Situ Derived Ag Formed via Low-Temperature Decomposition of Ag2O in the Bonding Paste

Lee, Yun-Ju; Lee, Jong‐Hyun

doi:10.1007/s12540-022-01320-7

Cited by 3 publications

(2 citation statements)

References 29 publications

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“…There was evidence of inter-diffusion between Ag and Ni within the Ag matrix and the Ni back metallization layer of the MOSFET device for the Ag sintered joint. Similarly, inter-diffusion between the Ag and Cu layers 5,6,8,[16][17][18] was observed on the AMB ceramic substrate side of the sintered joint. These inter-diffusions contribute to the formation of a networked structure within the Ag sinter layer during the sintering process, 5,6,8 indicating that the integrity of the joint was established through inter-diffusion within the sintered matrix.…”

Section: R Ds(on) and E Sw Of Sic Mosfet Powermentioning

confidence: 66%

“…Hence, Ag sinter bonding technology, which remains stable up to the melting point of Ag at 960°C, is actively being researched. However, despite active advancements in alternative Ag sintering bonding processes 2,4-14 and materials, [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] a comprehensive comparison detailing the performance and long-term reliability differences between soldered and sintered modules…”

Section: Introductionmentioning

confidence: 99%

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Power Cycling Reliability with Temperature Deviation of Pressureless Silver Sintered Joint for Silicon Carbide Power Module

Hong,

Kim

2024

JOM

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SiC devices can enhance power conversion in electric vehicles. However, traditional soldering techniques are limited by their low melting temperatures. Therefore, we used pressureless Ag sintering to assemble a 1200 V/200 A SiC metal-oxide-semiconductor field-effect transistor power module and compared the long-term reliability, electrical properties, and driving performance of the module with those of a similar module assembled using the solder Sn-3.0Ag-0.5Cu (SAC305). To assess sinter joint reliability, we performed power cycling tests over two temperature ranges, 50–150°C and 50–175°C, for 15,000 cycles. Subsequently, we compared the breakdown voltage (BVDSS) and drain-source on-resistance (RDS(ON)) of the SiC power modules and performed cross-sectional analyses of the device bonding interfaces. No difference in BVDSS was found between the Ag-sintered and SAC305-soldered joints. However, the RDS(ON) exhibited minimal variation for the Ag-sintered module but significantly varied for the SAC305-soldered module, suggesting that the former better maintained its characteristics. Furthermore, the electrical characteristics of the SAC305-soldered module underwent more significant alterations with increasing temperature change during power cycling, indicating that cracks propagated throughout the SAC305 soldered joint over time. Therefore, Ag sintering was quantitatively validated as the superior die attachment technology compared to soldering for long-term reliability.

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Section: R Ds(on) and E Sw Of Sic Mosfet Powermentioning

confidence: 66%

Section: Introductionmentioning

confidence: 99%

Power Cycling Reliability with Temperature Deviation of Pressureless Silver Sintered Joint for Silicon Carbide Power Module

Hong,

Kim

2024

JOM

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Thermal decomposition temperature-dependent bonding performance of Ag nanostructures derived from metal–organic decomposition

Wang,

Tatsumi,

Nishikawa

2024

J Mater Sci

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In wide-bandgap semiconductor power device packaging, die bonding refers to attaching the die to substrate. Thereby, the process temperature of Ag sintering for the die bonding should be low to prevent damage to fragile dies. Herein, an organic-free strategy using Ag nanostructures derived from the thermal decomposition of metal–organic decomposition (MOD) was proposed to achieve low-temperature bonding. Significant effects on bonding performance were determined by the thermal decomposition temperature, which in turn determined the organic content and sintering degree of Ag nanostructures. At a low thermal decomposition temperature of 160 °C, incomplete decomposition resulted in high organic content in the Ag nanostructures, causing large pores inside the Ag joints owing to the generation of gaseous products. Owing to the Ag particles with naked surfaces and wide size distribution, the Ag nanostructure obtained at 180 °C showed an excellent bonding performance, resulting in a high shear strength of 31.1 MPa at a low bonding temperature of 160 °C. As the thermal decomposition temperature was 200 °C, sintering among Ag particles increased the particle size, resulting in a reduction of surface energy and driving force for sintering. We think that uncovering this underlying mechanism responsible for the bonding performance will promote the application of Ag MOD in the die bonding of WBG power devices. Graphical abstract

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Effect of Different Proportions and Powder Sizes of Sn on The Performance of Cu-Sn TLPB Joints

Ding,

Zhao,

Zhu

et al. 2023

2023 24th International Conference on Electronic Packaging Technology (ICEPT)

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Ultrafast Sinter Bonding Between Cu Finishes Under Moderate Compression Using In Situ Derived Ag Formed via Low-Temperature Decomposition of Ag2O in the Bonding Paste

Cited by 3 publications

References 29 publications

Power Cycling Reliability with Temperature Deviation of Pressureless Silver Sintered Joint for Silicon Carbide Power Module

Power Cycling Reliability with Temperature Deviation of Pressureless Silver Sintered Joint for Silicon Carbide Power Module

Thermal decomposition temperature-dependent bonding performance of Ag nanostructures derived from metal–organic decomposition

Effect of Different Proportions and Powder Sizes of Sn on The Performance of Cu-Sn TLPB Joints

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