Ultrafast decay of femtosecond laser-induced grating in silicon-quantum-dot-based optical waveguides

A novel device, lateral PIN photodiode gated by transparent electrode (LPIN PD-GTE) fabricated on fully-depleted SOI film was proposed. ITO film was adopted in the device as gate electrode to reduce the light absorption. Thin Si film was fully depleted under gate voltage to achieve low dark current and high photo-to-dark current ratio. The model of gate voltage was obtained and the numerical simulations were presented by ATLAS. Current−voltage characteristics of LPIN PD-GTE obtained in dark (dark current) and under 570 nm illumination (photo current) were studied to achieve the greatest photo-to-dark current ratio for active channel length from 2 to 12 µm. The results show that the photo-to-dark current ratio is 2.0×10 7 , with dark current of around 5×10 −4 pA under V GK =0.6 V, P IN =5 mW/cm 2 , for a total area of 10 µm×10 µm in fully depleted SOI technology. Thus, the LPIN PD-GTE can be suitable for high-grade photoelectric systems such as blue DVD.

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Electrically pumped random lasing based on an Au–ZnO nanowire Schottky junction

Gao

Morshed

Bashar

et al. 2015

Nanoscale

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Electrically pumped random lasing based on an Au-ZnO nanowire Schottky junction diode is demonstrated. The device exhibits typical Schottky diode current-voltage characteristics with a turn-on voltage of 0.7 V. Electroluminescence characterization shows good random lasing behavior and the output power is about 67 nW at a drive current of 100 mA. Excitonic recombination is responsible for lasing generation.Zn plasma is only observed under high applied bias, which can be distinguished from the random lasing spectral features near 380 nm. The laser diode based on the Schottky junction provides an alternative approach towards semiconductor random lasers.

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Ultrafast decay of femtosecond laser-induced grating in silicon-quantum-dot-based optical waveguides

Cited by 3 publications

References 24 publications

The Synthesis of Silicon Nanocrystals by Ion Implantation

The Synthesis of Silicon Nanocrystals by Ion Implantation

Analysis and simulation of lateral PIN photodiode gated by transparent electrode fabricated on fully-depleted SOI film

Electrically pumped random lasing based on an Au–ZnO nanowire Schottky junction

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