Analysis and simulation of lateral PIN photodiode gated by transparent electrode fabricated on fully-depleted SOI film

Xie, Hai-Qing; Zeng, Yonghong; Jian-ping, Zeng; Wang, Taihong

doi:10.1007/s11771-011-0757-8

Cited by 7 publications

(4 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As W ch increased, therefore, the dark current was enlarged by increasing the thermally excited carriers. This phenomenon was observed in the previous study of the channel length effect on dark current [ 29 ]. However, the photocurrent also increases with the increase of W ch because the increased active area generates more electron-hole pairs.…”

Section: Resultssupporting

confidence: 78%

Fabrication and Optimization of Vertically Aligned ZnO Nanorod Array-Based UV Photodetectors via Selective Hydrothermal Synthesis

Nagaraju

2015

Nanoscale Res Lett

View full text Add to dashboard Cite

Vertically aligned ZnO nanorod array (NRA)-based ultraviolet (UV) photodetectors (PDs) were successfully fabricated and optimized via a facile hydrothermal process. Using a shadow mask technique, the thin ZnO seed layer was deposited between the patterned Au/Ti electrodes to bridge the electrodes. Thus, both the Au electrodes could be connected by the ZnO seed layer. As the sample was immersed into growth solution and heated at 90 °C, the ZnO NRAs were crystallized and vertically grown on the ZnO seed layer, thus creating a metal-semiconductor-metal PD structure. To investigate the size effect of ZnO NRAs on photocurrent, the PDs were readily prepared with different concentrations of growth solution. For the ZnO NRAs grown at 25 mM of concentration, the PD with 10 μm of channel width (i.e., gap distance between two electrodes) exhibited a high photocurrent of 1.91 × 10−4 A at an applied bias of 10 V under 365 nm of UV light illumination. The PD was optimized by adjusting the channel width. For 15 μm of channel width, a relatively high photocurrent on-off ratio of 37.4 and good current transient characteristics were observed at the same applied bias. These results are expected to be useful for cost-effective and practical UV PD applications.

show abstract

Section: Resultssupporting

confidence: 78%

Fabrication and Optimization of Vertically Aligned ZnO Nanorod Array-Based UV Photodetectors via Selective Hydrothermal Synthesis

Nagaraju

2015

Nanoscale Res Lett

View full text Add to dashboard Cite

show abstract

“…[8][9][10]. Based on standard SOI technology and CMOS process, the photodetector structure resembles LPIN photodiode, but only with ITO deposited on the topside as transparent gate electrode.…”

Section: Introductionmentioning

confidence: 99%

Operation of thin-film gated SOI lateral PIN photodetectors with gate voltage applied and intrinsic length variation

Zeng

Zou

et al. 2014

Optik

Self Cite

View full text Add to dashboard Cite

“…Assuming no recombination in the depletion region, photogenerated electron‐hole pairs are separated by the built‐in field. Because of the resistance of the p–n junction, all of majority carriers cannot across depletion region . Therefore, only photogenerated carriers in region I to III diffuse to the side of the junction.…”

Section: The Detailed Physical Modelmentioning

confidence: 99%

“…In recent years, photoelectric products have attracted increasing interest for both civilian and military applications . With the scaling down of complementary metal‐oxide semiconductor (CMOS) technology from sub‐micron process to deep sub‐micron process, developing high sensitivity, high integration, low power, low cost, and miniaturization of optical detection system has been possible . Because of ultraviolet absorption depth in silicon is less than 200 nm, the responsivity and selectivity of photodiode for ultraviolet (UV), which manufactured in a general CMOS process are poorly .…”

Section: Introductionmentioning

confidence: 99%

Numerical modeling of a CMOS UV/blue photodetector based on MOSFET and lateral photosensitive diode

Tian

Jin

Chen

et al. 2015

Int J Numerical Modelling

View full text Add to dashboard Cite

SUMMARYA complementary metal-oxide semiconductor photodetector with ring-shaped structure is presented in this paper, which consists of a p-channel metal-oxide-semiconductor field-effect transistor and lateral photodiodes and can be applied for ultraviolet (UV)/blue detection. The p-channel metal-oxide-semiconductor is enclosed by ring-shaped lateral photodiodes and lateral ring-shaped photodiodes for enlarging near-surface depletion region of the photodetector. Photoelectric conversion process of the photodetector has been modeled, and some performance parameters of photodetector have been derived and evaluated. The simulation results show that the photodetector can exhibit a high current responsivity of 1 × 10 À3 Å even for ultra-weak light such as 0.01 μW. The composite photodetector is fabricated in a standard 0.18 μm complementary metal-oxide semiconductor technology. The test results reveal that the presented photodetector, which just like predicted by the model, is an effective way to solve the low response of silicon-based UV detector. In a word, the presented photodetector has a big potential application value in weak light and UV/blue light detection.

show abstract

Analysis and simulation of lateral PIN photodiode gated by transparent electrode fabricated on fully-depleted SOI film

Cited by 7 publications

References 13 publications

Fabrication and Optimization of Vertically Aligned ZnO Nanorod Array-Based UV Photodetectors via Selective Hydrothermal Synthesis

Fabrication and Optimization of Vertically Aligned ZnO Nanorod Array-Based UV Photodetectors via Selective Hydrothermal Synthesis

Operation of thin-film gated SOI lateral PIN photodetectors with gate voltage applied and intrinsic length variation

Numerical modeling of a CMOS UV/blue photodetector based on MOSFET and lateral photosensitive diode

Contact Info

Product

Resources

About