The Synthesis of Silicon Nanocrystals by Ion Implantation

Elliman, R. G.

doi:10.1002/9783527629954.ch9

Cited by 7 publications

(3 citation statements)

References 67 publications

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“…Moreover they can be exploited to develop CMOS compatible devices and novel third-generation photovoltaic systems. Methods for the fabrication of matrix-embedded Si-NCs are the plasma enhanced chemical vapor deposition (PECVD) [179], the reactive magnetron sputtering [180], the ion implantation [181] and the formation of superlattices of alternating SiO x and SiO 2 layers (see Fig. 3, for scheme of the different techniques used) [67,182,183].…”

Section: Matrix-embedded Nanocrystalsmentioning

confidence: 99%

Doped and codoped silicon nanocrystals: The role of surfaces and interfaces

Marri

Degoli

Ossicini

2017

Progress in Surface Science

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Si nanocrystals have been extensively studied because of their novel properties and their potential applications in electronic, optoelectronic, photovoltaic, thermoelectric and biological devices. These new properties are achieved through the combination of the quantum confinement of carriers and the strong influence of surface chemistry. As in the case of bulk Si the tuning of the electronic, optical and transport properties is related to the possibility of doping, in a controlled way, the nanocrystals. This is a big challenge since several studies have revealed that doping in Si nanocrystals differs from the one of the bulk. Theory and experiments have underlined that doping and codoping are influenced by a large number of parameters such as size, shape, passivation and chemical environment of the silicon nanocrystals. However, the connection between these parameters and dopant localization as well as the occurrence of self-purification effects are still not clear. In this review we summarize the latest progress in this fascinating research field considering free-standing and matrix-embedded Si nanocrystals both from the theoretical and experimental point of view, with special attention given to the results obtained by ab-initio calculations and to size-, surface- and interface-induced effects

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Section: Matrix-embedded Nanocrystalsmentioning

confidence: 99%

Doped and codoped silicon nanocrystals: The role of surfaces and interfaces

Marri

Degoli

Ossicini

2017

Progress in Surface Science

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“…Depending on the silicon content of the SRO films, individual nanocrystals or a sponge-like interconnected crystalline Si structures can form in SiO 2 . Photoluminescence or electrical transport studies in nanocrystalline Si formed upon phase separation into SiO 2 suggest that the films with x = O/Si ratio close to 1 results in a percolated structure [23,24,28,29]. Here, we demonstrate the formation of sponge-like Si in PECVD grown SRO films by cw laser annealing.…”

Section: Introductionmentioning

confidence: 63%

Laser induced sponge-like Si in Si-rich oxides for photovoltaics

Gündoğdu¹,

Ozen²,

Hübner³

et al. 2013

Opt. Express

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We show that a sponge-like structure of interconnected Si nanowires embedded in a dielectric matrix can be obtained by laser annealing of silicon rich oxides (SRO). Due to quantum confinement, the large bandgap displayed by these percolated nanostructures can be utilized as a tandem stage in 3rd generation thin-film solar cells. Well passivated by the SiO₂ dielectric matrix, they are expected to overcome the difficulty of carrier separation encountered in the case of isolated crystalline quantum dots. In this study PECVD grown SRO were irradiated by a cw Ar⁺ laser. Raman spectroscopy has been used to assess the crystallinity of the Si nanostructures and thus to optimize the annealing conditions as dwell times and power densities. In addition, Si plasmon imaging in the transmission electron microscope was applied to identify the sponge-like structure of phase-separated silicon.

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“…Phase separation and crystallization were ensured by annealing at 1100 °C in a nitrogen atmosphere [20,21]; however, first Si-ncls were formed at 900 °C and partial crystallization occurs at 1000 °C in N 2 [22]. The general characteristics to form Si-ncs to date, namely deposition followed by a high temperature anneal, is the same for all of the deposition techniques [23][24][25][26][27][28][29][30].…”

mentioning

confidence: 99%

Photoluminescence from low thermal budget silicon nano-crystals in silica

Soubane

Quitoriano

2015

Nanotechnology

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We have developed a novel method to fabricate Si nanocrystals in a silica matrix with a considerably reduced thermal budget using pulsed laser deposition. Normally, Si nanocrystals are formed through phase separation by annealing a Si-rich SiO2 film at 1100 °C; we show Si nanocrystal formation in as-deposited films at 550 °C. We suggest the mechanism for this is through surface diffusion during deposition. We also show the ability to vary the size of these nanocrystals by adjusting the deposition conditions and can increase their size through annealing. If the nanocrystals are small they have excellent photoluminescence properties however larger nanocrystals have poor luminescence.

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The Synthesis of Silicon Nanocrystals by Ion Implantation

Cited by 7 publications

References 67 publications

Doped and codoped silicon nanocrystals: The role of surfaces and interfaces

Doped and codoped silicon nanocrystals: The role of surfaces and interfaces

Laser induced sponge-like Si in Si-rich oxides for photovoltaics

Photoluminescence from low thermal budget silicon nano-crystals in silica

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